DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BZX84 series
Voltage regulator diodes
Product specification
Supersedes data of 1996 Apr 26
1999 May 18
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 250 mW
•
Three tolerance series:
±1%, ±2%
and approx.
±5%
•
Working voltage range:
nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes
in small SOT23 plastic SMD
packages.
The diodes are available in the
normalized E24
±1%
(BZX84-A),
±2%
(BZX84-B) and approx.
±5%
(BZX84-C) tolerance range.
The series consists of 37 types with
nominal working voltages from
2.4 to 75 V.
Top view
handbook, halfpage
2
BZX84 series
PINNING
PIN
1
2
3
anode
not connected
cathode
DESCRIPTION
1
2
n.c.
3
3
1
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
1999 May 18
2
Philips Semiconductors
Product specification
Voltage regulator diodes
MARKING
TYPE
NUMBER
MARKING
CODE
(1)
TYPE
NUMBER
MARKING
CODE
(1)
TYPE
NUMBER
MARKING
CODE
(1)
BZX84 series
TYPE
NUMBER
MARKING
CODE
Marking codes for BZX84-C2V4 to BZX84-C75
BZX84-C2V4
BZX84-C2V7
BZX84-C3V0
BZX84-C3V3
BZX84-C3V6
BZX84-C3V9
BZX84-C4V3
BZX84-C4V7
BZX84-C5V1
BZX84-C5V6
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z1∗
Z2∗
Z3∗
BZX84-C6V2
BZX84-C6V8
BZX84-C7V5
BZX84-C8V2
BZX84-C9V1
BZX84-C10
BZX84-C11
BZX84-C12
BZX84-C13
BZX84-C15
Z4∗
Z5∗
Z6∗
Z7∗
Z8∗
Z9∗
Y1∗
Y2∗
Y3∗
Y4∗
BZX84-C16
BZX84-C18
BZX84-C20
BZX84-C22
BZX84-C24
BZX84-C27
BZX84-C30
BZX84-C33
BZX84-C36
BZX84-C39
Y5∗
Y6∗
Y7∗
Y8∗
Y9∗
Y10
Y11
Y12
Y13
Y14
BZX84-C43
BZX84-C47
BZX84-C51
BZX84-C56
BZX84-C62
BZX84-C68
BZX84-C75
−
−
−
Y15
Y16
Y17
Y18
Y19
Y20
Y21
−
−
−
Marking codes for BZX84-B2V4 to BZX84-B75
BZX84-B2V4
BZX84-B2V7
BZX84-B3V0
BZX84-B3V3
BZX84-B3V6
BZX84-B3V9
BZX84-B4V3
BZX84-B4V7
BZX84-B5V1
BZX84-B5V6
Z50
Z51
Z52
Z53
Z54
Z55
Z56
Z57
Z58
Z59
BZX84-B6V2
BZX84-B6V8
BZX84-B7V5
BZX84-B8V2
BZX84-B9V1
BZX84-B10
BZX84-B11
BZX84-B12
BZX84-B13
BZX84-B15
Z60
Z61
Z62
Z63
Z64
Z65
Z66
Z67
Z68
Z69
BZX84--B16
BZX84-B18
BZX84-B20
BZX84-B22
BZX84-B24
BZX84-B27
BZX84-B30
BZX84-B33
BZX84-B36
BZX84-B39
Z70
Z71
Z72
Z73
Z74
Z75
Z76
Z77
Z78
Z79
BZX84-B43
BZX84-B47
BZX84-B51
BZX84-B56
BZX84-B62
BZX84-B68
BZX84-B75
−
−
−
Z80
Z81
Z82
Z83
Z84
Z85
Z86
−
−
−
Marking codes for BZX84-A2V4 to BZX84-A75
BZX84-A2V4
BZX84-A2V7
BZX84-A3V0
BZX84-A3V3
BZX84-A3V6
BZX84-A3V9
BZX84-A4V3
BZX84-A4V7
BZX84-A5V1
BZX84-A5V6
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
Y50
Y51
Y52
Y53
Y54
Y55
Y56
Y57
Y58
Y59
BZX84-A6V2
BZX84-A6V8
BZX84-A7V5
BZX84-A8V2
BZX84-A9V1
BZX84-A10
BZX84-A11
BZX84-A12
BZX84-A13
BZX84-A15
Y60
Y61
Y62
Y63
Y64
Y65
Y66
Y67
Y68
Y69
BZX84-A16
BZX84-A18
BZX84-A20
BZX84-A22
BZX84-A24
BZX84-A27
BZX84-A30
BZX84-A33
BZX84-A36
BZX84-A39
Y70
Y71
Y72
Y73
Y74
Y75
Y76
Y77
Y78
Y79
BZX84-A43
BZX84-A47
BZX84-A51
BZX84-A56
BZX84-A62
BZX84-A68
BZX84-A75
−
−
−
Y80
Y81
Y82
Y83
Y84
Y85
Y86
−
−
−
1999 May 18
3
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX84-A and B and C series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZX84-A/B/C2V4
BZX84-A/B/C2V7
BZX84-A/B/C3V0
BZX84-A/B/C3V3
BZX84-A/B/C3V6
BZX84-A/B/C3V9
BZX84-A/B/C4V3
BZX84-A/B/C4V7
BZX84-A/B/C5V1
BZX84-A/B/C5V6
BZX84-A/B/C6V2
BZX84-A/B/C6V8
BZX84-A/B/C7V5
BZX84-A/B/C8V2
BZX84-A/B/C9V1
BZX84-A/B/C10
BZX84-A/B/C11
BZX84-A/B/C12
BZX84-A/B/C13
BZX84-A/B/C15 to 75
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 0.7V
Znom
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
CONDITIONS
I
F
= 10 mA; see Fig.3
0.9
PARAMETER
continuous forward current
non-repetitive peak reverse current t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge; see Fig.2
CONDITIONS
−
MIN.
BZX84 series
MAX.
200
UNIT
mA
see Tables
1 and 2
−
−
−65
−65
250
40
+150
+150
mW
W
°C
°C
MAX.
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
UNIT
1999 May 18
4
1999 May 18
5
Philips Semiconductors
Table 1
Per type BZX84-A/B/C2V4 to
A/B/C24
T
j
= 25
°C
unless otherwise specified.
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
Tol.
±1%
(A)
MIN.
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
2.37
2.67
2.97
3.26
3.56
3.86
4.25
4.65
5.04
5.54
6.13
6.73
7.42
8.11
9.00
9.90
10.80
11.88
12.87
14.85
15.84
17.82
19.80
21.78
23.76
MAX.
2.43
2.73
3.03
3.34
3.64
3.94
4.35
4.75
5.16
5.66
6.27
6.87
7.58
8.29
9.20
10.10
11.11
12.12
13.13
15.15
16.16
18.18
20.20
22.22
24.24
Tol.
±2%
(B)
MIN.
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.60
21.60
23.50
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.40
22.40
24.50
Tol. approx.
±5%
(C)
MIN.
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
MAX.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at
at
I
Ztest
= 1 mA I
Ztest
= 5 mA
TYP. MAX. TYP. MAX.
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
50
50
60
60
60
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
70
75
80
85
85
85
80
50
40
15
6
6
6
6
6
8
10
10
10
10
10
10
15
20
25
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
MIN.
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
TYP.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
16.4
18.4
20.4
MAX.
0
0
0
0
0
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 4 and 5)
DIODE CAP. NON-REPETITIVE
C
d
(pF)
PEAK REVERSE
at f = 1 MHz;
CURRENT
V
R
= 0 V
I
ZSM
(A)
at t
p
= 100
µs;
T
amb
= 25
°C
MAX.
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
MAX.
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
Voltage regulator diodes
BZX84-A
or B or C
XXX
BZX84 series
Product specification
ARM技术
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