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12CTQ035STRRPBF

产品描述Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, 35V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, D2PAK-3
产品类别分立半导体    二极管   
文件大小122KB,共6页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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12CTQ035STRRPBF概述

Rectifier Diode, Schottky, 1 Phase, 2 Element, 6A, 35V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, D2PAK-3

12CTQ035STRRPBF规格参数

参数名称属性值
是否Rohs认证符合
零件包装代码SFM
包装说明R-PSSO-G2
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
其他特性FREE WHEELING DIODE, HIGH RELIABILITY
应用HIGH POWER
外壳连接CATHODE
配置COMMON CATHODE, 2 ELEMENTS
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.53 V
JESD-30 代码R-PSSO-G2
最大非重复峰值正向电流690 A
元件数量2
相数1
端子数量2
最高工作温度175 °C
最低工作温度-55 °C
最大输出电流6 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
最大重复峰值反向电压35 V
表面贴装YES
技术SCHOTTKY
端子形式GULL WING
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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12CTQ...SPbF, 12CTQ...-1PbF
Vishay High Power Products
Schottky Rectifier, 2 x 6 A
12CTQ...SPbF
12CTQ...-1PbF
FEATURES
175 °C T
J
operation
Center tap TO-220 package
Low forward voltage drop
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS directive 2002/95/EC
Halogen-free according to IEC 61249-2-21 definition
AEC-Q101 qualified
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
D
2
PAK
DESCRIPTION
TO-262
PRODUCT SUMMARY
I
F(AV)
V
R
2x6A
35 V to 45 V
The 12CTQ... center tap Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation up
to 175 °C junction temperature. Typical applications are in
switching power supplies, converters, freewheeling diodes,
and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Range
t
p
= 5 µs sine
6 Apk, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
12
35 to 45
690
0.53
- 55 to 175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
12CTQ035SPbF
12CTQ035-1PbF
35
12CTQ040SPbF
12CTQ040-1PbF
40
12CTQ045SPbF
12CTQ045-1PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
See fig. 5
per leg
I
F(AV)
per device
5 µs sine or 3 µs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
AS
I
AR
Following any rated load
condition and with rated
V
RRM
applied
50 % duty cycle at T
C
= 160 °C, rectangular waveform
12
690
A
140
8
1.20
mJ
A
SYMBOL
TEST CONDITIONS
VALUES UNITS
6
A
Maximum peak one cycle non-repetitive
surge current per leg
See fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
T
J
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH
Current decaying linearly to zero in 1 µs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94131
Revision: 07-Sep-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1

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