1N5221B - 1N5263B
0.5W Hermetically Sealed Glass Zener Diodes
Small Signal Product
Features
Zener voltage range 2.4 to 56 volts
DO-35 package (JEDEC)
Through-hole device type mounting
Hemetically sealed glass
Compression bonded construction
All extermal surface are corrosion
resistant and leads are readily solderable
RoHS compliant
Solder hot dip Tin(Sn) lead finish
Cathode indicated by polarity band
DO-35
Ordering Information (example)
Part No.
1N5221B
Package
Packing
Packing
code
R0
Green Compound
Packing code
R0G
DO-35(Glass Seal/Paner Reel) 10K/14inch(Reel)
Maximum Ratings and Electrical Characteristics
Rating at 25oCambient temperature unless otherwise specified.
Type Number
Power Dissipation
Forward Voltage @ IF=200mA
Operating and Storage Temperature Range
Symbol
Pd
V
F
T
J
, T
STG
Value
500
1.1
-65 to + 200
Units
mW
V
O
C
Version: B13
Small Signal Product
RATINGS AND CHARACTERISTIC CURVES (1N5221B THRU 1N5263B)
500
R
thJA
- Therm. Resist. Junction Ambient
(K/W)
400
V
Ztn
- Relative Voltage Change
300
200
100
0
0
5
10
15
95 9611
1.3
1.2
1.1
1.0
0.9
0.8
-60.0
0.0
95 9599
0
- 2 x 10
-4
/K
- 4 x 10
-4
/K
V
Ztn
= V
Zt
/V
Z
(25
°C)
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
20
60.0
120.0
180.0
240.0
I - Lead Length (mm)
Figure 1. Thermal Resistance vs. Lead Length
T
j
- Junction Temperature (°C)
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
1000
Ptot - Total Power Dissipation (mW)
600
T
j
= 25
°C
500
400
300
200
100
0
0
40
95 9602
V
Z
- Voltage Change (mV)
100
I
Z
= 5 mA
10
1
0
5
10
15
20
25
80
120
160
200
95 9598
V
Z
- Z-Voltage (V)
T
amb
- Ambient Temperature (°C)
Figure 2. Typical Change of Working Voltage under
Operating Conditions at T
amb
= 25
°C
Figure 4. Total Power Dissipation vs. Ambient Temperature
Version: B13
Small Signal Product
RATINGS AND CHARACTERISTIC CURVES (1N5221B THRU 1N5263B)
15
TK
VZ
- Temperature Coefficient of V
Z
(10
-4
/K)
I
Z
- Z-Current (mA)
100
80
60
40
20
0
0
10
20
30
40
50
0
2
4
95 9604
P
tot
= 500 mW
T
amb
= 25
°C
10
5
I
Z
= 5 mA
0
-5
95 9600
V
Z
- Z-Voltage (V)
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
6
8
10
V
Z
- Z-Voltage (V)
Figure 8. Z-Current vs. Z-Voltage
200
50
I
Z
- Z-Current (mA)
40
30
20
10
0
15
20
95 9607
C
D
- Diode Capacitance (pF)
150
P
tot
= 500 mW
T
amb
= 25
°C
V
R
= 2 V
T
j
= 25
°C
100
50
25
30
35
0
0
5
95 9601
10
15
20
25
V
Z
- Z-Voltage (V)
V
Z
- Z-Voltage (V)
Figure 6. Diode Capacitance vs. Z-Voltage
Figure 9. Z-Current vs. Z-Voltage
100
10
I
F
- Forward Current (mA)
1
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
V
F
- Forward Voltage (V)
Figure 7. Forward Current vs. Forward Voltage
95 9605
1000
r
Z
- Differiential Z-Resistance (Ω)
I
Z
= 1 mA
100
5 mA
T
j
= 25
°C
10
10 mA
1
0
5
10
15
T
j
= 25
°C
20
25
95 9606
V
Z
- Z-Voltage (V)
Figure 10. Differential Z-Resistance vs. Z-Voltage
Version: B13
Small Signal Product
RATINGS AND CHARACTERISTIC CURVES (1N5221B THRU 1N5263B)
1000
Z
thp
–The rmal Resistance for Pulse Cond.
(KW)
t
p
/T = 0.5
100
t
p
/T = 0.2
Single Pulse
t
p
/T = 0.01
10
t
p
/T = 0.1
t
p
/T = 0.05
t
p
/T = 0.02
R
thJA
= 300 K/W
T = T
jmax
–T
amb
i
ZM
= (–VZ +(VZ
2
+ 4r
zj
x T/Z
thp
)
1 / 2
) /(2r
zj
)
1
0.1
1.0
10.0
t
p
– Pulse Length (ms)
Figure 11. Thermal Response
100.0
1000.0
95 9603
Version: B13
ELECTRICAL CHARACTERISTICS
(Ratings at TA=25
o
C ambient temperature unless otherwise specified).
Device
Vz @ Izt
Current
Z
ZT
@ I
ZT
Z
ZK
@I
ZK
=0.25mA
I
R
@ V
R
Voltage
I
ZT
Ω
Ω
uA
V
R
Nominal
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
1N5229B
1N5230B
1N5231B
1N5232B
1N5233B
1N5234B
1N5235B
1N5236B
1N5237B
1N5238B
1N5239B
1N5240B
1N5241B
1N5242B
1N5243B
1N5244B
1N5245B
1N5246B
1N5247B
1N5248B
1N5249B
1N5250B
1N5251B
1N5252B
1N5253B
1N5254B
1N5255B
1N5256B
1N5257B
1N5258B
1N5259B
1N5260B
1N5261B
1N5262B
1N5263B
Notes:
2.4
2.5
2.7
2.8
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
(mA)
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
5.2
5.0
4.6
4.5
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
Max.
30
30
30
30
29
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
Max.
1200
1250
1300
1400
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
Max.
100
100
75
75
50.0
25.0
15.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
(Volts)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8
8.4
9
10
10
11
12
13
14
14
15
17
18
18
21
21
23
25
27
30
33
36
39
43
1. The type numbers listed have zener voltage as whown and have a standard
tolerance on the nominal zener voltage of ±5%. Device of ±2% is indicated
by a "C" instead of a "B".
2. Nominal zener voltages between the voltages shown and tighter voltage, for
detalied information on price, availability and delivery.
3. The zener voltage(V
Z
) is tested under pulse condition. The measured V
Z
is
guaranteed to be within specification with device junction in thermal equilibrium.
4. Zener impedance is derived from the 60-cycle ac voltage, which results when an ac
current having an RMS value equal to 10% of the dc zener current (I
ZT
) is
superimposed to I
ZT
.
Version: B13
MicroPython开源版块
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
