MCC
Features
•
•
•
•
•
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
1N17
THRU
1N19
1.0 Amp Schottky
Barrier Rectifier
20 to 40 Volts
High Current Capability
Low Power loss
High Efficiency
Low Forward Voltage Drop
Metal Silicon junction, majority carrier conduction
Maximum Ratings
•
•
•
•
Operating Temperature: -55°C to +125°C
Storage Temperature: -55°C to +125°C
Typical Thermal Resistance: 50
o
C/W junction to Ambient
For capacitive load. Derate current by 20%
Maximum
Recurrent
Peak Reverse
Voltage
20V
30V
40V
Maximum DC
Blocking
Voltage
20V
30V
40V
D
R-1
MCC
Part Number
1N17
1N18
1N19
Maximum
RMS
Voltage
14V
21V
28V
A
Cathode Mark
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Rectified Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
1N17
1N18
1N19
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
I
(AV)
I
FSM
1.0A
25A
T
A
= 90°C
8.3ms, half sine
D
B
V
F
C
0.45V
0.55V
0.60V
0.5mA
10mA
110pF
I
FM
= 1.0A;
T
C
= 25°C
DIMENSIONS
INCHES
MM
NOTE
MIN
A
B
C
D
0.116
0.091
0.020
0.787
MAX
0.140
0.102
0.024
-----
MIN
2.90
2.30
0.50
20.00
MAX
3.50
2.60
0.60
-----
I
R
T
C
= 25°C
T
C
= 100°C
Measured at
1.0MHz, V
R
=4.0V
DIM
C
J
Note:
300 us pulse width, 1% duty cycle
www.mccsemi.com
1N17 thru 1N19
MCC
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
T
J
=T
J
MAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
RESISTIVE OR INDUCTIVE LOAD
0.375" (9.5MM) LEAD LENGTH
PEAK FORWARD SURGE
CURRENT(AMPERES)
LEAD TEMPERATURE ( C)
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
IN STAN TANEOUS FORWARD CURRENT( AMPERES)
T
J
=125 C
PULSE WIDTH=300 S
1% DUTY CYCLE
INSTANTAN EOUS REVERSE C URRENT MILL (AMPERES)
T
J
=25 C
T
J
=125 C
T
J
=75 C
T
J
=25 C
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
PERCENT OF RATED PEAK REVERSE VOLTAGE%
FIG.5-TYPICAL JUNCTION CAPACITANCE
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE, C/ W
JUNCTION CAPACITANCE(pF)
T
J
=25 C
f=1.0MH
Z
Vsig=50mVp-p
REVERSE VOLTAGE. VOLTS
T, PULSE DURATION ,sec.
www.mccsemi.com