Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 500 mW
•
Two tolerance series:
±2%,
and approx.
±5%
•
Working voltage range: nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power dissipation:
max. 40 W.
handbook, halfpage
BZX79 series
k
a
MAM239
APPLICATIONS
•
Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed
leaded glass SOD27 (DO-35) packages. The diodes are
available in the normalized E24
±2%
(BZX79-B) and
approx.
±5%
(BZX79-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
The diodes are type branded.
Fig.1
Simplified outline (SOD27; DO-35) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
≤
50
°C;
max. lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total BZX79-B and BZX79-C series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 10 mA; see Fig.4
MAX.
0.9
UNIT
V
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 50
°C;
note 1
T
amb
= 50
°C;
note 2
CONDITIONS
−
MIN.
MAX.
250
UNIT
mA
see Tables 1 and 2 A
−
−
400
500
40
+200
+200
mW
mW
W
°C
°C
t
p
= 100
µs;
square wave;
−
T
j
= 25
°C
prior to surge; see Fig.3
−65
−65
2002 Feb 27
2
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Table 1
Per type, BZX79-B/C2V4 to BZX79-B/C24
T
j
= 25
°C
unless otherwise specified.
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 5 and 6)
NON-REPETITIVE PEAK
DIODE CAP.
REVERSE CURRENT
C
d
(pF)
at f = 1 MHz;
I
ZSM
(A)
V
R
= 0 V
at t
p
= 100
µs;
T
amb
= 25
°C
2002 Feb 27
at I
Ztest
= 1 mA
at I
Ztest
= 5 mA
TYP.
70
75
80
85
85
85
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
7.4
8.4
7.0
9.2
10.4
45
55
20
25
55
70
12.4
12.3
14.1
15.9
9.4
11.4
12.4
14.4
15.6
17.6
19.6
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
300
300
300
450
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
450
6.0
80
50
40
15
6
6
6
6
6
8
10
10
10
10
10
10
15
40
30
30
25
6.0
20
5.4
20
4.5
6.4
15
3.8
5.5
15
3.2
4.6
15
2.5
4.0
15
1.2
3.0
10
0.4
2.3
40
−2.0
1.2
60
−2.7
−0.8
80
−3.5
−1.4
90
−3.5
−2.5
90
−3.5
−2.5
90
−3.5
0
450
6.0
−2.4
95
−3.5
0
450
6.0
−2.4
95
−3.5
0
450
6.0
−2.1
100
−3.5
0
450
6.0
−2.0
100
−3.5
0
450
6.0
−1.6
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
50
50
60
60
60
250
250
225
225
200
200
170
150
150
150
100
80
80
80
150
400
480
500
600
600
600
600
600
600
600
MAX.
Philips Semiconductors
BZX79-
Bxxx
Cxxx
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
Tol.
±2%
(B)
Tol. approx.
±5%
(C)
MIN.
MAX.
MIN.
MAX.
2V4
2.35
2.45
2.2
2.6
2V7
2.65
2.75
2.5
2.9
Voltage regulator diodes
3V0
2.94
3.06
2.8
3.2
3V3
3.23
3.37
3.1
3.5
3V6
3.53
3.67
3.4
3.8
3V9
3.82
3.98
3.7
4.1
4V3
4.21
4.39
4.0
4.6
4V7
4.61
4.79
4.4
5.0
5V1
5.00
5.20
4.8
5.4
4
5V6
5.49
5.71
5.2
6.0
6V2
6.08
6.32
5.8
6.6
6V8
6.66
6.94
6.4
7.2
7V5
7.35
7.65
7.0
7.9
8V2
8.04
8.36
7.7
8.7
9V1
8.92
9.28
8.5
9.6
10
9.80
10.20
9.4
10.6
11
10.80
11.20
10.4
11.6
12
11.80
12.20
11.4
12.7
13
12.70
13.30
12.4
14.1
15
14.70
15.30
13.8
15.6
16
15.70
16.30
15.3
17.1
18
17.60
18.40
16.8
19.1
20
19.60
20.40
18.8
21.2
22
21.60
22.40
20.8
23.3
BZX79 series
Product specification
24
23.50
24.50
22.8
25.6
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Table 2
Per type, BZX79-B/C27 to BZX79-B/C75
T
j
= 25
°C
unless otherwise specified.
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 2 mA
(see Figs 5 and 6)
NON-REPETITIVE PEAK
DIODE CAP.
REVERSE CURRENT
C
d
(pF)
at f = 1 MHz;
I
ZSM
(A)
V
R
= 0 V
at t
p
= 100
µs;
T
amb
= 25
°C
2002 Feb 27
at I
Ztest
= 0.5 mA at I
Ztest
= 2 mA
TYP.
65
70
75
80
80
85
85
90
100
120
150
170
500
95
255
73.4
80.2
88.6
475
90
240
65.6
71.7
79.8
35
35
450
80
215
58.8
64.4
71.6
35
425
70
200
42.2
52.0
63.8
40
400
60
180
38.6
46.9
57.2
40
375
50
170
35.0
42.9
51.8
40
0.5
0.4
0.3
0.3
0.25
0.2
375
45
150
31.4
38.8
46.6
40
0.6
350
40
130
28.7
34.8
41.2
45
0.7
350
35
90
26.0
31.8
37.4
45
0.8
325
35
80
23.3
28.7
33.4
45
0.9
300
30
80
20.6
25.7
29.4
50
1.0
300
25
80
18.0
22.7
25.3
50
1.0
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
Philips Semiconductors
BZX79-
Bxxx
Cxxx
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 2 mA
Tol.
±2%
(B)
Tol. approx.
±5%
(C)
MIN.
MAX.
MIN.
MAX.
27
26.50
27.50
25.1
28.9
30
29.40
30.60
28.0
32.0
Voltage regulator diodes
33
32.30
33.70
31.0
35.0
36
35.30
36.70
34.0
38.0
39
38.20
39.80
37.0
41.0
43
42.10
43.90
40.0
46.0
47
46.10
47.90
44.0
50.0
51
50.00
52.00
48.0
54.0
56
54.90
57.10
52.0
60.0
5
62
60.80
63.20
58.0
66.0
68
66.60
69.40
64.0
72.0
75
73.50
76.50
70.0
79.0
BZX79 series
Product specification
嵌入式系统
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