10A030
3 Watts, 20 Volts, Class A
Linear to 1000 MHz
GENERAL DESCRIPTION
The 10A030 is a COMMON EMITTER transistor capable of providing 3
Watts of Class A, RF Output power to 1000 MHz. This transistor is
specifically designed for general Class A amplifier applications. It utilizes
gold metalization and diffused ballasting to provide high reliability and
supreme ruggedness.
CASE OUTLINE
55FT, STYLE 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
13 Watts
50 Volts
3.5 Volts
1.5 Amps
- 65 to + 150
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
Ft
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Transition Frequency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1.0 GHz
Ic = 440 mA
Vcc = 20 Volts
Vce = 20, Ic= 440 mA
MIN
3.0
0.5
7.8
2.5
8.5
30:1
TYP
MAX
UNITS
Watts
Watts
dB
GHz
BVebo
BVces
BVceo
H
FE
Cob
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
DC Current Gain
Output Capacitance
Thermal Resistance
Ie = 3 mA
Ic = 20 mA
Ic = 20 mA
Vce=5V, Ic = 200mA
Vcb =28 V, f = 1 MHz
3.5
50
24
20
7.3
10
Volts
Volts
Volts
120
12.5
o
pF
C/W
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
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