CE
CHENYI ELECTRONICS
FEATURES
. The zener voltage are graded according to the international E24
standard .Other voltage tolerance and higher zener voltage
on request.
BZX55-C0V8 THRU BZX55-C200
0.5W SILICON PLANAR ZENER DIODES
MECHANICAL DATA
.
Case:
DO-35 glass case
.
Polarity:
Color band denotes cathode end
.
Weight:
Approx. 0.13gram
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)(T
A
=25
)
Symbols
Zener current see table "Characteristics"
Power dissipation at T
A
=50
Junction temperature
Storage temperature range
P
tot
T
J
T
STG
Value
Units
500
1)
175
-65 to + 175
mW
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS(TA=25
)
Symbols
Thermal resistance junction to ambient
Forward voltage
at I
F
=100mA
R
JA
Min.
Typ.
Max.
300
1)
1
Units
K/W
V
V
F
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 1 of 4
CE
CHENYI ELECTRONICS
BZX55-C0V8 THRU BZX55-C200
0.5W SILICON PLANAR ZENER DIODES
BXZ55... SILICON PLANAR ZENER DIODES
Zener Voltage Range
1)
Type
V
ZNOM
V
BZX 55/C 0V8
3)
BZX 55/C 2V0
BZX 55/C 2V4
BZX 55/C 2V7
BZX 55/C 3V0
BZX 55/C 3V3
BZX 55/C 3V6
BZX 55/C 3V9
BZX 55/C 4V3
BZX 55/C 4V7
BZX 55/C 5V1
BZX 55/C 5V6
BZX 55/C 6V2
BZX 55/C 6V8
BZX 55/C 7V5
BZX 55/C 8V2
BZX 55/C 9V1
BZX 55/C 10
BZX 55/C 11
BZX 55/C 12
BZX 55/C 13
BZX 55/C 15
BZX 55/C 16
BZX 55/C 18
BZX 55/C 20
0.8
2.0
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
5
I
ZT
for V
ZT 2
)
mA
V
0.73…0.83
1.9…2.1
2.28…2.56
2.5…2.9
2.8…3.2
3.1…3.5
3.4…3.8
3.7…4.1
4.0…4.6
4.4…5.0
4.8…5.4
5.2…6.0
5.8…6.6
6.4…7.2
7.0…7.9
7.7…8.7
8.5…9.6
9.4…10.6
10.4…11.6
11.4…12.7
12.4…14.1
13.8…15.6
15.3…17.1
16.8…19.1
18.8…21.2
<75
<60
<35
<25
<10
<8
<7
<7
<10
<15
<20
<20
<26
<30
<40
<50
<55
<70
<70
<90
<110
<110
<170
<170
<220
<0.1
<2
<50
<550
<450
<200
<150
1
2.0
3.0
5.0
6.2
6.8
7.5
8.2
9.1
10.0
11.0
12
13
15
0.03…0.11
<1
<0.5
<20
<10
-0.06…-0.03
-0.05…+0.02
-0.02…+0.02
-0.05…+0.05
0.03…0.06
0.03…0.07
0.03…0.07
0.03…0.08
0.03…0.09
0.03…0.1
<85
<600
<40
<2
<1
-0.08…-0.05
<8
<50
Dynamic resistance
Reverse leakage current
I
R
and I
R 2)
at V
R
mA
-
<100
<50
<10
<4
A
-
<200
<100
<50
-0.09…-0.06
A
V
-
Temp coefficient
of zener voltage
r
zjt
and
r
zjk
at I
zk
TK
VZ
%/K
-0.26...-0.23
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 2 of 4
CE
CHENYI ELECTRONICS
BZX55-C0V8 THRU BZX55-C200
0.5W SILICON PLANAR ZENER DIODES
BXZ55... SILICON PLANAR ZENER DIODES
BZX 55/C 22
BZX 55/C 24
BZX 55/C 27
BZX 55/C 30
BZX 55/C 33
BZX 55/C 36
BZX 55/C 39
BZX 55/C 43
BZX 55/C 47
BZX 55/C 51
BZX 55/C 56
BZX 55/C 62
BZX 55/C 68
BZX 55/C 75
BZX 55/C 82
BZX 55/C 91
BZX 55/C 100
BZX 55/C 110
BZX 55/C 120
BZX 55/C 130
BZX 55/C 150
BZX 55/C 160
BZX 55/C 180
BZX 55/C 200
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
1
2.5
5
20.8…23.3
22.8…25.6
25.1…28.9
28…32
31…35
34…38
37…41
40…46
44…50
48….54
52…60
58…66
64…72
70…79
77…87
85…96
94…106
104…116
114…127
124…141
138…156
153…171
168…191
188…212
<1500
<2000
<5000
<5000
<5500
<6000
<6500
<7000
<8500
<10000
0.1
<10
0.25
<1000
<0.1
<500
<500
<600
<700
<700
0.5
<5
<220
<80
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
0.05…0.12
0.04…0.12
1
<2
<55
<80
16
18
20
22
1)Tested with pulses tp=20ms
2)Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
3)The BZX55-C0V8 is silicon diode with operation in forward direction. Hence, the index of all parameters should be 'F' instead of 'Z'. Connect the cathode
lead to the negative pole.
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 3 of 4
CE
CHENYI ELECTRONICS
BZX55-C0V8 THRU BZX55-C200
0.5W SILICON PLANAR ZENER DIODES
BXZ55... SILICON PLANAR ZENER DIODES
BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED)
BREAKDOWN CHARACTERISTICS AT TJ=CONSTANT(PULSED)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
Page 4 of 4
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