DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA603T
P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)
The
µ
PA603T is a mini-mold device provided with two
MOS FET circuits. It achieves high-density mounting and
saves mounting costs.
PACKAGE DIMENSIONS (in millimeters)
0.65
+0.1
–0.5
0.32
+0.1
–0.05
0.16
+0.1
–0.06
FEATURES
• Two MOS FET circuits in package the same size as
SC-59
• Complement to
µ
PA602T
• Automatic mounting supported
2.8 ±0.2
1.5
0 to 0.1
0.95
1.9
0.95
0.8
1.1 to 1.4
2.9 ±0.2
PIN CONNECTION (Top view)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
*
P
T
T
ch
T
stg
RATINGS
–50
+16
–100
–200
300 (Total)
150
–55 to +150
UNIT
V
V
mA
mA
mW
˚C
˚C
*
PW
≤
10 ms, Dury Cycle
≤
50 %
Document No. G11250EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
µ
PA603T
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
PARAMETER
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-State Resistance
Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
I
DSS
I
GSS
V
GS(off)
|y
fs
|
R
DS(on)1
R
DS(on)2
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS(on)
= –4.0 V, R
G
= 10
Ω,
V
DD
= –5.0 V, I
D
= –10 mA, R
L
= 500
Ω
TEST CONDITIONS
V
DS
= –50 V, V
GS
= 0
V
GS
= +16 V, V
DS
= 0
V
DS
= –5.0 V, I
D
= –1.0
µ
A
V
DS
= –5.0 V, I
D
= –10 mA
V
GS
= –4.0 V, I
D
= –10 mA
V
GS
= –10 V, I
D
= –10 mA
V
DS
= –5.0 V, V
GS
= 0, f = 1.0 MHz
MIN.
–
–
–1.5
15
–
–
–
–
–
–
–
–
–
TYP.
–
–
–1.9
–
60
40
17
9
1
45
75
25
80
MAX.
–1.0
+1.0
–2.5
–
100
60
–
–
–
–
–
–
–
UNIT
µ
A
µ
A
V
mS
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
Marking: JA
SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS
V
GS
DUT
R
L
Gate
voltage
waveform
I
D
t
d(on)
Drain
current
waveform
0
t
r
t
d(off)
t
f
10 %
V
GS(on)
90 %
V
DD
R
G
PG.
10 %
I
D
10 %
0
V
GS
τ
τ
= 1
µ
s
Duty Cycle
≤
1 %
90 %
90 %
2
µ
PA603T
TYPICAL CHARACTERISTICS (T
A
= 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
350
Free air
P
T
- Total Power Dissipation - mW
100
dT - Derating Factor - %
80
60
40
20
300
250
200
150
100
50
Pe
ro
ne
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
To
ta
l
un
it
0
20
40
60
80 100 120 140 160
T
C
- Case Temperature - ˚C
0
25
50
75
100
125
T
A
- Ambient Temperature - ˚C
150
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
–120
Pulsed
measurement
–100
I
D
- Drain Current - mA
–80
–60
–40
–20
V
GS
= –2 V
I
D
- Drain Current - mA
–8 V
–100
–6 V
–4 V
–10
TRANSFER CHARACTERISTICS
–1
T
A
= 150 ˚C
75 ˚C
25 ˚C
–25 ˚C
V
DS
= –5.0 V
Pulsed
measurement
0
–5
–10
V
GS
- Gate to Source Voltage - V
–15
–0.1
–0.01
0
–2
–4
–6
–8
–10 –12
V
DS
- Drain to Source Voltage - V
–14
–0.001
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
–2.4
V
GS(off)
- Gate Cut-off Voltage - V
–2.2
–2.0
–1.8
–1.6
–1.4
–1.2
–30
V
DS
= –5.0 V
I
D
= –1
µ
A
|y
fs
| - Forward Transfer Admittance - mS
100
50
FORWARD TRANSFER ADMITTANCE
vs. DRAIN CURRENT
V
DS
= –5.0 V
20
10
5
T
A
= –25 ˚C
25 ˚C
75 ˚C
150 ˚C
2
1
–1
0
30
60
90
120
T
ch
- Channel Temperature - ˚C
150
–2
–5
–10
–20
I
D
- Drain Current mA
–50
–100
3
µ
PA603T
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
100
Pulsed
measurement
I
D
= –1 mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
150
V
GS
= –4 V
Pulsed
measurement
T
A
= 150 ˚C
R
DS(on)
- Drain to Source On-State Resistance -
Ω
R
DS(on)
- Drain to Source On-State Resistance -
Ω
100
I
D
= –10 mA
50
75 ˚C
25 ˚C
50
–25 ˚C
0
–4
–8
–12
–16
V
GS
- Gate to Source Voltage - V
–20
0
–1
–2
–5
–10 –20
I
D
- Drain Current - mA
–50
–100
R
DS(on)
- Drain to Source On-State Resistance -
Ω
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
140
120
100
80
60
40
20
–30
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
GS
= –4 V
I
D
= –10 mA
100
50
20
10
5
2
1
0.5
0.2
0
30
60
90
120
T
ch
- Channel Temperature - ˚C
150
0.1
–0.5
–1
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
GS
= 0
f = 1 MHz
C
iss
C
oss
C
rss
–2
–5 –10 –20
–50 –100
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
500
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DD
= –5.0 V
V
GS
= –4 V
R
G
= 10
Ω
100
I
SD
- Source to Drain Current - mA
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
200
100
50
t
r
10
t
d(on)
t
f
20
10
5
–5
t
d(off)
1
–10
–20
–50 –100 –200
I
D
- Drain Current - mA
–500
0.1
0.5
0.6
0.7
0.8
0.9
V
SD
- Source to Drain Voltage - V
1
4
µ
PA603T
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system
Quality grade on NEC semiconductor devices
Semiconductor device mounting technology manual
Guide to quality assurance for semiconductor devices
Semiconductor selection guide
Document No.
TEI-1202
IEI-1209
C10535E
MEI-1202
X10679E
5
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