Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation:
max. 500 mW
•
Tolerance series:
±5%
•
Working voltage range:
nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power
dissipation: max. 40 W.
APPLICATIONS
•
Low voltage stabilizers or voltage
references.
The diodes are type branded.
BZX55 series
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass
SOD27 (DO-35) packages.
The diodes are available in the normalized E24
±5%
tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 to 75 V
(BZX55-C2V4 to BZX55-C75).
handbook, halfpage
k
a
MAM239
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
= 50
°C;
note 1
T
amb
= 50
°C;
note 2
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
t
p
= 8.3 ms; square wave;
T
j
≤
150
°C
prior to surge
T
stg
T
j
Notes
1. Device mounted on a printed circuit-board without metallization pad; lead length max.
2. Tie-point temperature
≤
50
°C;
lead length 8 mm.
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 100 mA; see Fig.4
MIN.
−
MAX.
1.0
V
UNIT
storage temperature
junction temperature
CONDITIONS
MIN.
−
MAX.
250
UNIT
mA
see Table
“Per type”
−
−
−
−
−65
−
400
500
40
30
+200
200
mW
mW
W
W
°C
°C
1996 Apr 26
2
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
GRAPHICAL DATA
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 8 mm
BZX55 series
VALUE
300
380
UNIT
K/W
K/W
lead length max.; see Fig.2 and note 1
10
3
handbook, full pagewidth
Rth j-a
(K/W)
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
MBG930
10
2
10
0.02
0.01
≤0.001
tp
T
tp
T
δ
=
1
10
−1
1
10
10
2
10
3
10
4
tp (ms)
10
5
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.
1996 Apr 26
5
NXP MCU
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