TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
| 参数名称 | 属性值 |
| 包装说明 | IN-LINE, R-PSIP-T3 |
| 针数 | 3 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 10 |
| 最大集电极电流 (IC) | 0.1 A |
| 基于收集器的最大容量 | 6 pF |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 80 |
| JESD-30 代码 | R-PSIP-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.3 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 250 MHz |
| VCEsat-Max | 0.3 V |
| Base Number Matches | 1 |
| RN1206 | RN1204 | RN1203 | RN1202 | RN1201 | |
|---|---|---|---|---|---|
| 描述 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 包装说明 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 |
| 针数 | 3 | 3 | 3 | 3 | 3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | BUILT-IN BIAS RESISTOR RATIO IS 10 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 | BUILT-IN BIAS RESISTOR RATIO IS 1 |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 基于收集器的最大容量 | 6 pF | 6 pF | 6 pF | 6 pF | 6 pF |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 80 | 80 | 70 | 50 | 30 |
| JESD-30 代码 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 | R-PSIP-T3 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 极性/信道类型 | NPN | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 0.3 W | 0.3 W | 0.3 W | 0.3 W | 0.3 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子面层 | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz | 250 MHz |
| VCEsat-Max | 0.3 V | 0.3 V | 0.3 V | 0.3 V | 0.3 V |
| 厂商名称 | - | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) | Toshiba(东芝) |
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