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RN1963FE: 产品描述TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor); 产品类别分立半导体晶体管; 文件大小83KB，共4页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1963FE概述

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1963FE规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
包装说明	SMALL OUTLINE, R-PDSO-F6
针数	6
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70
JESD-30 代码	R-PDSO-F6
JESD-609代码	e0
元件数量	2
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
最大功率耗散 (Abs)	0.1 W
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	FLAT
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz

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RN1961FE~RN1966FE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1961FE,RN1962FE,RN1963FE

RN1964FE,RN1965FE,RN1966FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications.

Two devices are incorporated into an Extreme-Super-Mini (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

Complementary to RN2961FE~RN2966FE

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1961FE

RN1962FE

RN1963FE

RN1964FE

RN1965FE

RN1966FE

R1 (kW)

4.7

2.2

4.7

R2 (kW)

4.7

JEDEC

JEITA

TOSHIBA

Weight:

g (typ.)

―

Maximum Ratings

(Ta

25°C) (Q1, Q2 common)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN1961FE~

1966FE

RN1961FE~

1964FE

RN1965FE,

1966FE

Symbol

CBO

CEO

Rating

EBO

(Note)

stg

100

150

-55~150

°C

Unit

Equivalent Circuit

(top view)

Emitter-base voltage

Collector current

Collector power dissipation RN1961FE~

RN1966FE

Junction temperature

Storage temperature range

Note: Total rating

2002-01-29

RN1961FE~RN1966FE

RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc..

The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this

document shall be made at the customer’s own risk.

The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other

rights of the third parties which may result from its use. No license is granted by implication or otherwise under

any intellectual property or other rights of TOSHIBA CORPORATION or others.

The information contained herein is subject to change without notice.

2002-01-29

RN1963FE相似产品对比

	RN1963FE	RN1966FE	RN1964FE	RN1965FE	RN1962FE	RN1961FE
描述	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
包装说明	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6
针数	6	6	6	6	6	6
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 10	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 21.37	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	70	80	80	80	50	30
JESD-30 代码	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6	R-PDSO-F6
JESD-609代码	e0	e0	e0	e0	e0	e0
元件数量	2	2	2	2	2	2
端子数量	6	6	6	6	6	6
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN
最大功率耗散 (Abs)	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W	0.1 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子面层	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
厂商名称	Toshiba(东芝)	-	Toshiba(东芝)	Toshiba(东芝)	Toshiba(东芝)	-

RN1963FE

RN1963FE概述

RN1963FE规格参数

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RN1963FE相似产品对比

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