AP4502GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
D2
D2
D1
D1
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
I
D
S2
G1
G2
20V
18mΩ
8.3A
-20V
45mΩ
-5A
▼
Low Gate Charge
▼
Fast Switching Performance
▼
RoHS Compliant & Halogen-Free
P-CH BV
DSS
R
DS(ON)
I
D
SO-8
S1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is widly preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
20
+12
8.3
6.5
30
2.0
0.016
-55 to 150
-55 to 150
Rating
N-channel
P-channel
-20
+12
-5
-4
-20
V
V
A
A
A
W
W/℃
℃
℃
Units
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
1
200907155
Data and specifications subject to change without notice
AP4502GM-HF
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=9A
V
GS
=4.5V, I
D
=8.3A
V
GS
=2.5V, I
D
=5.2A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
o
Min.
20
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
8.3
-
-
-
22
3
9
11
13
30
14
1350
325
255
Max. Units
-
16
18
30
-
-
1
25
+100
-
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=8.3A
V
DS
=20V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=8A
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
R
G
=3.3Ω,V
GS
=5V
R
D
=10Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
Drain-Source Leakage Current (T
j
=70 C)
V
DS
=16V ,V
GS
=0V
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=1.8A, V
GS
=0V
I
S
=8A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
32
24
Max. Units
1.2
-
-
V
ns
nC
2
AP4502GM-HF
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-6A
V
GS
=-4.5V, I
D
=-5A
V
GS
=-2.5V, I
D
=-4A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
o
Min.
-20
-
-
-
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
2.2
-
-
-
13
1.5
4.5
8
17
24
36
920
90
85
Max. Units
-
40
45
80
-
-
-1
-25
+100
-
-
-
-
-
-
-
-
-
-
V
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-2.2A
V
DS
=-20V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=-5A
V
DS
=-16V
V
GS
=-4.5V
V
DS
=-10V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-5V
R
D
=10Ω
V
GS
=0V
V
DS
=-20V
f=1.0MHz
Drain-Source Leakage Current (T
j
=70 C)
V
DS
=-16V, V
GS
=0V
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-1.8A, V
GS
=0V
I
S
=-5A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
28
16
Max.
-1.2
-
-
30
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 135
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4502GM-HF
N-Channel
30
30
T
A
=25
℃
I
D
, Drain Current (A)
I
D
, Drain Current (A)
5.0V
4.5V
3.5V
2.5V
T
A
=150
℃
5.0V
4.5V
3.5V
2.5V
20
20
V
G
= 2.0 V
V
G
=2.0V
10
10
0
0
1
2
3
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
34
1.8
I
D
= 5.2A
30
T
A
= 25 C
Normalized R
DS(ON)
o
I
D
=8.3A
V
G
=10V
R
DS(ON0
(m
Ω
)
26
1.4
22
18
1.0
14
30
0.6
1
2
3
4
5
-50
0
-30
50
100
150
10
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
8
1.6
6
Normalized V
GS(th)
(V)
1.2
1.4
1.2
I
S
(A)
T
j
=150
o
C
4
T
j
=25
o
C
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4502GM-HF
N-Channel
f=1.0MHz
12
10000
10
V
GS
, Gate to Source Voltage (V)
I
D
=8A
V
DS
= 10 V
8
1000
C
iss
C (pF)
C
oss
C
rss
100
6
4
2
0
0
10
20
30
40
50
10
1
5
9
13
17
21
25
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Operation in this
area limited by
R
DS(ON)
100us
1ms
Normalized Thermal Response (R
thja
)
0.2
0.1
0.1
I
D
(A)
0.05
1
10ms
100ms
0.02
0.01
P
DM
0.01
t
T
Single Pulse
0.1
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
1s
DC
100
30
0.001
0.0001
0.001
0.01
0.1
-30
1
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
5
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