AP4420GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
35V
10mΩ
52A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4420GJ) are available for low-profile applications.
G
□
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
35
±20
52
33
200
45
0.35
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
2.8
110
Units
℃/W
℃/W
Data & specifications subject to change without notice
200703061-1/4
AP4420GH/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
35
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.01
-
-
-
28
-
-
-
16
6
9.5
9
74
22.5
7.7
320
230
1.8
Max. Units
-
-
10
24
3
-
1
25
±100
26
-
-
-
-
-
-
-
-
2.7
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=15A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=35V, V
GS
=0V
V
DS
=28V, V
GS
=0V
V
GS
=±20V
I
D
=30A
V
DS
=25V
V
GS
=4.5V
V
DS
=15V
I
D
=30A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.5Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
1520 2430
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=30A, V
GS
=0V
I
S
=20A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
27
20
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Reverse Recovery Charge
Drain-Source Avalanche Ratings
Symbol
E
AS
I
AS
Parameter
Drain-Source Avalanche Energy
3
Drain-Source Avalanche Current
Test Conditions
I
D
=15A, V
DD
=35V, L=1mH
Min.
-
-
Typ.
-
15
Max. Units
113
-
mJ
A
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Single Pulse Test.
2/4
AP4420GH/J
120
120
T
C
=25 C
100
o
10V
7.0 V
100
T
C
=150
o
C
10V
7 .0V
I
D
, Drain Current (A)
80
I
D
, Drain Current (A)
80
60
5.0V
4.5 V
60
5.0V
4.5 V
V
G
=4.0V
40
40
V
G
= 4.0 V
20
20
0
0.0
2.0
4.0
6.0
8.0
0
0.0
2.0
4.0
6.0
8.0
10.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2.0
I
D
=15A
T
C
=25 C
60
o
I
D
=30A
V
G
=10V
1.6
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
40
1.2
20
0.8
0
0.4
2
4
6
8
10
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
50.0
30
25
T
j
=150
o
C
20
T
j
=25
o
C
R
DS(ON)
(mΩ)
40.0
30.0
I
S
(A)
15
V
GS
=4.5V
20.0
10
V
GS
=10V
10.0
5
0
0
0.4
0.8
1.2
1.6
0.0
0
10
20
30
40
V
SD
, Source-to-Drain Voltage (V)
I
D
, Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3/4
AP4420GH/J
f=1.0MHz
16
10000
V
GS
, Gate to Source Voltage (V)
I
D
=30A
12
C (pF)
V
DS
=15V
V
DS
=20V
V
DS
=25V
C
iss
1000
8
C
oss
C
rss
100
4
0
0
5
10
15
20
25
30
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
100
Normalized Thermal Response (R
thjc
)
0.2
100us
I
D
(A)
10
0.1
0.1
0.05
1
T
C
=25 C
Single Pulse
o
1ms
10ms
100ms
DC
P
DM
0.02
0.01
t
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0
0.1
1
10
100
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
V
DS
=5V
100
V
G
Q
G
I
D
, Drain Current (A)
80
T
j
=25 C
o
T
j
=150 C
o
4.5V
Q
GS
Q
GD
60
40
20
Charge
0
Q
0
2
4
6
8
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
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