AP4419GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
Lower On-resistance
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant
G
S
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
-35V
38mΩ
-25A
Description
The TO-252 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP4419GJ) is available for low-profile applications.
G
G D
S
TO-252(H)
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
-35
±20
-25
-16
-70
34.7
0.28
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
3.6
110
Units
℃/W
℃/W
Data and specifications subject to change without notice
200428051-1/4
AP4419GH/J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=-250uA
Min.
-35
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-0.02
-
-
-
14
-
-
-
12
3
8
12
40
46
56
700
180
150
10
Max. Units
-
-
38
68
-3
-
-1
-25
±100
20
-
-
-
-
-
-
1120
-
-
15
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-10V, I
D
=-16A
V
GS
=-4.5V, I
D
=-12A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-16A
V
DS
=-30V, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
= ±20V
I
D
=-16A
V
DS
=-30V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-16A
R
G
=3.3Ω,V
GS
=-10V
R
D
=0.9Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
2
Test Conditions
I
S
=-16A, V
GS
=0V
I
S
=-16A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
27
17
Max. Units
-1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP4419GH/J
60
60
T
C
= 25
o
C
-I
D
, Drain Current (A)
-10V
-7.0V
-I
D
, Drain Current (A)
T
C
= 150 C
o
-10V
-7.0V
40
40
-5.0V
-4.5V
20
-5.0V
-4.5V
20
V
G
= -3.0 V
V
G
= -3.0 V
0
0
2
4
6
8
0
0
2
4
6
8
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
110
1.7
I
D
= -12 A
T
C
=25
℃
80
I
D
=-16A
V
G
=-10V
1.4
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.1
50
0.8
20
2
4
6
8
10
0.5
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
12
8
Normalized -V
GS(th)
(V)
1.2
-I
S
(A)
T
j
=150
o
C
T
j
=25
o
C
4
0.8
0
0.4
0
0.4
0.8
1.2
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP4419GH/J
f=1.0MHz
12
1000
-V
GS
, Gate to Source Voltage (V)
V
DS
=-30V
I
D
=-16A
9
C
iss
6
C (pF)
3
C
oss
C
rss
0
0
4
8
12
16
20
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
100us
-I
D
(A)
10
0.1
0.1
0.05
1ms
T
c
=25
o
C
Single Pulse
10ms
100ms
1s
DC
10
100
P
DM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
1
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
V
DS
=-5V
30
V
G
Q
G
T
j
=25
o
C
T
j
=150
o
C
-I
D
, Drain Current (A)
-4.5V
Q
GS
Q
GD
20
10
Charge
0
0
2
4
6
8
Q
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
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