AP3990S-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
600V
0.6Ω
10A
S
Description
AP3990 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
The TO-263 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
G
D
S
TO-263(S)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Rating
600
+ 30
10
6.5
40
174
Units
V
V
A
A
A
W
W
mJ
A
℃
℃
Total Power Dissipation
Total Power Dissipation
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
4
2
3.13
50
10
-55 to 150
-55 to 150
Single Pulse Avalanche Energy
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value
0.72
40
Unit
℃/W
℃/W
1
201202081
Data & specifications subject to change without notice
AP3990S-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
3
o
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=480V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=10A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=10A
R
G
=10Ω,V
GS
=10V
R
D
=30Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5
-
-
34
11
11
19
28
43
22
225
9
Max. Units
-
0.6
4.5
-
100
+100
57
-
-
-
-
-
-
-
-
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
2030 3250
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Starting T
j
=25 C , V
DD
=50V , L=1.0mH , R
G
=25Ω , I
AS
=10A.
3.Pulse test
4.Surface mounted on 1 in
2
copper pad of FR4 board
o
Parameter
Forward On Voltage
3
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=10A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
600
12
Max. Units
1.5
-
-
V
ns
uC
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP3990S-HF
20
12
T
C
=25 C
16
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
T
C
=150
o
C
10
10V
7 .0V
6 .0V
8
12
6
V
G
=5 0V
8
4
4
2
V
G
=5.0V
0
0
5
10
15
20
0
0
4
8
12
16
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.3
3.2
2.8
1.2
I
D
=5A
V
G
=10V
Normalized BV
DSS
(V)
Normalized R
DS(ON)
2.4
2
1.1
1.6
1
1.2
0.8
0.9
0.4
0.8
-50
0
50
100
150
0
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
T
j
, Junction Temperature ( C )
o
Fig 3. Normalized BV
DSS
v.s. Junction
Temperature
10
1.4
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.2
T
j
= 150
o
C
T
j
= 25
o
C
Normalized V
GS(th)
(V)
1.2
1
I
S
(A)
1
0.8
0.6
0.1
0
0.2
0.4
0.6
0.8
1
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP3990S-HF
f=1.0MHz
12
3200
V
GS
, Gate to Source Voltage (V)
10
I
D
=10A
V
DS
=480V
2400
8
6
C (pF)
C
iss
1600
4
800
2
0
0
20
40
60
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
Normalized Thermal Response (R
thjc
)
10
100us
0.2
I
D
(A)
0.1
0.1
1ms
1
0.05
T
c
=25
o
C
Single Pulse
0.1
1
10
100
10ms
100ms
DC
P
DM
0.02
t
T
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
1000
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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