AP3987P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Fast Switching Characteristic
▼
Simple Drive Requirement
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
600V
1Ω
7A
S
Description
AP3987 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications. The TO-220 type provide
G
high blocking voltage to overcome voltage surge and sag in the toughest
D
S
power system with the best combination of fast switching,ruggedized design
and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
applications. The device is suited for switch mode power supplies, DC-AC
converters and high current high speed switching circuits.
TO-220(P)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Single Pulse Avalanche Energy
2
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
+30
7
4.4
28
104
27
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
mJ
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
1.2
62
Unit
℃/W
℃/W
1
201307081
Data & specifications subject to change without notice
AP3987P-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
3
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=480V, V
GS
=0V
V
GS
=+30V, V
DS
=0V
I
D
=7A
V
DS
=480V
V
GS
=10V
V
DD
=300V
I
D
=7A
R
G
=10Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5
-
-
55
9
16
15
15
100
32
160
6
Max. Units
-
1
4
-
100
+100
90
-
-
-
-
-
-
-
-
V
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
2750 4400
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Notes:
1.Pulse width limited by Max. junction temperature.
o
2.Starting T
j
=25 C , V
DD
=50V , L=1.0mH , R
G
=25Ω
Parameter
Forward On Voltage
3
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=7A, V
GS
=0V
I
S
=7A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
530
8.6
Max. Units
1.5
-
-
V
ns
uC
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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