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JAN1N5519BUR-1

产品描述Zener Diode, 3.6V V(Z), 5%, 0.5W,
产品类别分立半导体    二极管   
文件大小283KB,共23页
制造商Aeroflex Metelics / Hi-Rel Components
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JAN1N5519BUR-1概述

Zener Diode, 3.6V V(Z), 5%, 0.5W,

JAN1N5519BUR-1规格参数

参数名称属性值
Objectid110096100
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE
二极管类型ZENER DIODE
最大动态阻抗24 Ω
元件数量1
最高工作温度200 °C
最大功率耗散0.5 W
标称参考电压3.6 V
表面贴装YES
最大电压容差5%
工作测试电流20 mA

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INCH-POUND
MIL-PRF-19500/437H
25 March 2008
SUPERSEDING
MIL-PRF-19500/437G
12 July 2006
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, LOW-NOISE VOLTAGE REGULATOR, TYPES
1N5518B-1, 1N5518C-1, 1N5518D-1 THROUGH 1N5546B-1, 1N5546C-1, 1N5546D-1, 1N5518BUR-1,
1N5518CUR-1, 1N5518DUR-1 THROUGH 1N5546BUR-1, 1N5546CUR-1, 1N5546DUR-1,
JAN, JANTX, JANTXV, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein
shall consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, low-noise, voltage
regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance
are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance
for each unencapsulated device type die. For JANHC and JANKC quality levels (see 6.5).
1.2 Physical dimensions. See figures 1 (DO-35), 2 (DO-213AA), and 3 (JANHC and JANKC).
1.3 Maximum ratings. Maximum ratings are shown in 3.8 herein and as follows:
a. PTL = 500 mW (DO-35) at TL = +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat
sink at L = .375 inch (9.53 mm). (Derate IZ to 0.0 mA dc at +175°C).
b. PTEC = 500 mW (DO-213AA) at TEC = +125°C. (Derate to 0 at +175°C).
c. PTPCB = 400 mW, TA = +55°C. (Derate to 0 at +175°C).
d. -65°C
TJ
+175°C; -65°C
TSTG
+175°C.
1.4 Primary electrical characteristics. Primary electrical characteristics are shown in 3.8 herein and as follows:
a. 3.3 V dc
VZ
33 V dc.
b. R
ΘJL
= 250°C/W (see note 1) (maximum) at L = .375 inch (9.53 mm) (DO-35).
c. R
ΘJEC
= 100°C/W (see note 1) (maximum) junction to end-caps (DO-213AA).
d. R
ΘJA
= 300°C/W (see note 1). Junction to ambient including PCB (see note 2).
e. For derating, see figures 4, 5, and 6.
See notes on next page
Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at
http://assist.daps.dla.mil
.
AMSC N/A
FSC 5961

 
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