®
BZW04-5V8/376
BZW04-5V8B/376B
TRANSIL
TM
FEATURES
s
s
s
s
s
s
PEAK PULSE POWER : 400 W (10/1000µs)
STAND-OFF VOLTAGE RANGE :
From 5.8V to 376 V
UNI AND BIDIRECTIONAL TYPES
LOW CLAMPING FACTOR
FAST RESPONSE TIME
UL RECOGNIZED
DESCRIPTION
Transil diodes provide high overvoltage protection
by clamping action. Their instantaneous response
to transient overvoltages makes them particu-
larly suited to protect voltage sensitive devices
such as MOS Technology and low voltage sup-
plied IC’s.
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C)
Symbol
P
PP
P
I
FSM
Parameter
Peak pulse power dissipation (see note 1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current
for unidirectional types
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s a 5mm
from case.
Tj initial = Tamb
T
amb
= 75°C
tp = 10ms
Tj initial = T
amb
Value
400
1.7
30
Unit
W
W
A
DO-15
T
stg
T
j
T
L
- 65 to + 175
175
230
°C
°C
°C
Note 1
: For a surge greater than the maximum values, the diode will fail in short-circuit.
THERMAL RESISTANCES
Symbol
R
th (j-l)
R
th (j-a)
Junction to leads
Junction to ambient on printed circuit.
L
lead
= 10 mm
Parameter
Value
60
100
Unit
°C/W
°C/W
February 2003- Ed : 3A
1/6
BZW04-xx
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C)
IF
I
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
I PP
VCL
VBR
V RM
VF
I RM
V
α
T
V
F
Types
I
RM
@ V
RM
max
µA
1000
500
10
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
BR
min
@
I
R
V
CL
@ I
PP
max
10/1000µs
V
10.5
11.3
14.5
16.7
21.2
25.2
30.6
33.2
37.5
41.5
45.7
49.9
53.9
64.8
77.0
92.0
113
137
165
207
246
274
328
344
414
A
38.0
35.4
27.6
24.0
19.0
16.0
13.0
12.0
10.7
9.6
8.8
8.0
7.4
6.2
5.2
4.3
3.5
2.9
2.4
2.0
1.6
1.5
1.4
1.5
1.2
V
CL
@ I
PP
max
8/20µs
V
13.4
14.5
18.6
21.7
27.2
32.5
39.3
42.8
48.3
53.5
59.0
64.3
69.7
84
100
121
146
178
212
265
317
353
388
442
529
A
174
160
124
106
85
71
59
54
48
43
39
36
33
27
23
19
16.0
13.0
11.0
9.0
7.0
6.5
6.0
5.2
4.3
αT
max
note3
10 /°C
5.7
6.1
7.3
7.8
8.4
8.8
9.2
9.4
9.6
9.7
9.8
9.6
10.0
10.1
10.3
10.4
10.5
10.6
10.7
10.8
10.8
10.8
10.8
11.0
11.0
-4
C
typ
note4
pF
3500
3100
2000
1550
1200
975
800
725
625
575
510
480
450
370
320
270
230
200
170
145
125
120
110
100
90
note2
Unidirectional
BZW04-5V8
BZW04-6V4
BZW04-8V5
BZW04-10
BZW04-13
BZW04-15
BZW04-19
BZW04-20
BZW04-23
BZW04-26
BZW04-28
BZW04-31
BZW04-33
BZW04-40
BZW04-48
BZW04-58
BZW04-70
BZW04-85
BZW04-102
BZW04-128
BZW04-154
BZW04-171
BZW04-188
BZW04-213
BZW04-256
Bidirectional
BZW04-5V8B
BZW04-6V4B
BZW04-8V5B
BZW04-10B
BZW04-13B
BZW04-15B
BZW04-19B
BZW04-20B
BZW04-23B
BZW04-26B
BZW04-28B
BZW04-31B
BZW04-33B
BZW04-40B
BZW04-48B
BZW04-58B
BZW04-70B
BZW04-85B
BZW04-102B
BZW04-128B
BZW04-154B
BZW04-171B
BZW04-188B
BZW04-213B
BZW04-256B
V
5.8
6.4
8.5
10.2
12.8
15.3
18.8
20.5
23.1
25.6
28.2
30.8
33.3
40.2
47.8
58.1
70.1
85.5
102
128
154
171
188
231
256
V
6.45
7.13
9.5
11.4
14.3
17.1
20.9
22.8
25.7
28.5
31.4
34.2
37.1
44.7
53.2
64.6
77.9
95.0
114
143
171
190
209
237
285
mA
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
2/6
BZW04-xx
Types
I
RM
@ V
RM
V
BR
@
min
note2
Unidirectional
BZW04-273
BZW04-299
BZW04-342
BZW04-376
Bidirectional
BZW04-273B
BZW04-299B
BZW04-342B
BZW04-376B
µA
1
1
1
1
V
273
299
342
376
V
304
332
380
418
mA
1
1
1
1
I
R
V
CL
@ I
PP
max
10/1000µs
V
438
482
548
603
A
1.2
0.9
0.9
0.8
V
564
618
706
776
V
CL
@ I
PP
max
8/20µs
A
4.0
3.7
3.2
3.0
αT
max
note3
10
-4
/°C
11.0
11.0
11.0
11.0
C
typ
note4
pF
85
80
75
70
Fig. 1:
Peak pulse power dissipation versus initial
junction temperature (printed circuit board).
% I
PP
100
10 s
PULSE WAVEFORM 10/1000 s
50
0
1000 s
t
Note 2 :
Note 3 :
Note 4 :
Pulse test: tp < 50 ms.
∆V
BR =
αT
* (Tamb - 25) * VBR(25°C)
VR = 0 V, F = 1 MHz. For bidirectional types,
capacitance value is divided by 2
3/6
BZW04-xx
Fig. 2 :
Peak pulse power versus exponential pulse duration.
P
PP
(W)
1E5
Tj initial = 25°C
1E4
1E3
1E2
1E1
0.001
0.01
0.1
1
tp (ms ) EXPO.
10
100
Fig. 3 :
Clamping voltage versus peak pulse current.
Exponential waveform t
p
= 20
µs________
t
p
= 1 ms——————-
t
p
= 10 ms...............
VCL (V)
1000
BWZ04
-
376
BWZ04
-
213
% Ipp
100
50
0
tr
t
t r < 10
s
Tj initial = 25°C
t
100
BWZ04
-
33
10
BWZ04
-
8V5
BWZ04
-
5V8
Ipp (A)
1
0.1
1
10
100
1000
Note :
The curves of the figure 3 are specified for a junction temperature of 25°C before surge.
The given results may be extrapolated for other junction temperatures by using the following formula :
∆V
BR
=
αT
*
(T
amb
-25)
*
V
BR
(25°C).
For intermediate voltages, extrapolate the given results.
4/6
BZW04-xx
Fig. 4a:
Capacitance versus reverse applied
voltage for unidirectional types (typical values).
C (pF)
10000
B Z W 04
-
5V 8
Fig. 4b:
Capacitance versus reverse applied
voltage for bidirectional types (typical values).
C (pF)
10000
Tj = 25ø
°
C
f = 1 MHz
B Z W0 4 - 5 V 8
1000
B Z W04 - 13B
B Z W04 - 26B
100
B Z W04 - 58B
B Z W04 - 171
B
V R (V)
B Z W04 - 342B
10
1
10
100
B
Tj = 25ø
C
f = 1 MHz
1000 BZW04
-
13
B Z W0 4
-
2
6
B ZW 0 4
-
5
8
100
BZW04
-
171
B ZW0 4
-
342
10
V R (V)
1
1
10
100
Fig. 5:
Peak forward voltage drop versus peak forward
current (typical values for unidirectional types).
Note
: Multiply by 2 for units with VBR > 220V.
Fig. 6:
Transient thermal impedance junction ambi-
ent versus pulse duration (For FR4 PC Board
with L
lead
= 10mm).
Zth (j-a) (
°
C/W)
100
10
tp(s)
1
0.01
0.1
1
10
100
1000
Fig. 7 :
Relative variation of leakage current
versus junction temperature.
5/6
NXP MCU
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