Product Overview

Multi-channel Silicon ESD Flow-Through Arrays

TE Connectivity’s Silicon ESD arrays help to protect electronic circuits against damage from

Electrostatic Discharge (ESD), surge and cable discharge events.

TE Connectivity

Multi-channel Silicon ESD Flow-Through Arrays

The Silicon ESD (SESD) arrays help provide protection and improve reliability of electronics

in applications including but not limited to consumer, portable and mobile electronics. The

multi-channel SESD ﬂow-through arrays have industry leading ultra-low capacitance of

0.20pF with low insertion loss which help protect high-speed data signals. The SESD

arrays provide robust ESD protection with an industry-leading 20kV contact and air

discharge rating per the IEC61000-4-2 standard. The ultra-low capacitance SESD arrays

enable signal integrity for today’s highest-speed interfaces including USB 3.0/2.0, HDMI,

eSATA, DisplayPort, and Thunderbolt.

TE offers four- and six- channel miniature arrays which are up to 85% smaller than common

multi-channel arrays to ﬁt into space constrained applications. TE’s ultra-small packages

have lower parasitic impedance which reduces insertion loss at high frequencies compared

to larger size packaged devices. The four- and six-channel arrays, with 0.31mm package

height, have a 50% lower proﬁle than other package options in the market. All of TE’s

KEY FEATURES

• Low Capacitance 0.20pF (typ, 200fF)

• Low leakage current –

50nA @ 5V (typ)

• Low clamping voltage –

+9.20/-0.80V (typ) @ (tp=8x20µs, Ipp=2A)

• ESD – 20kV contact and air discharge

per IEC61000-4-2

• Surge – 2A (tp=8x20µs) per

IEC61000-4-5

• Small size and low profile XDFN Array

packages – 0.31mm height

RoHS Complaint, Pb and

Halogen Free (refers to: Br

≤

900ppm,

Cl

≤

900ppm, Br+Cl

≤

1500ppm)

SESD arrays are in ﬂow-through design packages which allow for matched impedance PCB

trace routing essential for high speed signal integrity.

APPLICATIONS

•

Consumer, mobile and portable electronics

•

Tablet PC and external storage with high speed interfaces

•

Ultra-high speed data lines

•

USB 3.0/2.0, HDMI 1.3/1.4, DisplayPort interface, Thunderbolt interface (Light Peak),

V-by-One HS, and LVDS interface

•

Applications requiring high ESD performance in small DFN packages

BENEFITS

•

Industry-leading lowest capacitance;

provides lowest insertion loss for high speed data signals

•

Provides ESD protection up to 20kV contact and air discharge per IEC61000-4-2

•

Industry’s smallest footprint and lowest proﬁle multi-channel ESD arrays helps to

optimize board space

•

Flow-through and single connection design helps routing PCB matched impedance

high speed data lines

•

Helps protect electronic circuits against damage from Electrostatic Discharge (ESD),

lightning and cable discharge events

•

Assist equipment to pass IEC61000-4-2, level 4 testing

te.com

TE Connectivity

Multi-channel Silicon ESD Flow-Through Arrays

DEVICE ELECTRICAL CHARACTERISTICS

Device Maximum Ratings

IEC 61000-4-2, level 4

(ESD withstand)

Multi-Channel Arrays

SESD0402Q2UG-0020-090 (2-ch)

SESD0802Q4UG-0020-090 (4-ch)

SESD1004Q4UG-0020-090 (4-ch)

SESD1103Q6UG-0020-090 (6-ch)

Caution: Stress exceeding Device Maximum Ratings may damage the device.

Prolong exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Temperature

Operating (°C)

Storage (°C)

Peak Current

(tp=8x20µs)

Ipp (A)

Contact (kV)

Air (kV)

20

-55 to +125

-55 to +150

2.0

Device Electrical Characteristics @ T = 25°C

Input Capacitance

(1)

Multi-Channel Arrays

SESD0402Q2UG-0020-090 (2-ch)

SESD0802Q4UG-0020-090 (4-ch)

SESD1004Q4UG-0020-090 (4-ch)

SESD1103Q6UG-0020-090 (6-ch)

(1)

Breakdown Voltage

(typ)

V

br

@ I

t

= 1mA (V)

Reverse Leakage Current

(typ)

I

L

@ V

RWM

= 5.0V (nA)

Clamping Voltage

(typ)

V

CL

@ Ipp = 2.0A (V)

Typical (pF)

Maximun (pF)

0.20

0.22

+9.00 / -0.80

50.0

+9.20 / -0.80

@ Vr = 0V, f = 3GHz, I/O to GND

DEVICE IV CHARACTERISTICS AND OPERATION

SESD Multi-channel Array IV

1.0

0.8

0.6

0.4

One-channel in Multi-channel SESD Array

Connector

Application

Circuitry

ESD -V

Strike

path

th

GND

ESD +V

S

Strike

path

Current (mA)

0.2

0

-0.2

-0.4

-0.6

-0.8

-1.0

-2

-1

0

1

2

3

4

5

6

7

8

9

10

• Helps protect against damage from V

ESD

strikes to 20kV

contact & air discharge.

• If the signal voltage goes below -0.8V or above +9.0V the

ESD device turns on and shunts to GND.

Voltage (V)

te.com

TE Connectivity

Multi-channel Silicon ESD Flow-Through Arrays

SESD MULTI-CHANNEL ARRAY SCHEMATIC AND PIN CONFIGURATION

SESD Multi-channel Arrays Schematic

6-channel

4-channel

2-channel

CH1

CH2

CH3

CH4

CH5

CH6

SESD Multi-channel Flow-Through Array Pinout

10

2

G

1

3

1

2

9

8

G

3

4

5

7

6

2-ch 0402

4-ch Standard Array

6

5

G

2

1

2

3

4

G

1

3

4-ch Miniature Array

6-ch Miniature Array

RECOMMENDED APPLICATION CONFIGURATIONS

USB 3.0 using a a 4-ch Array and 2-ch Array

USB 3.0 using 4-ch Array and 2-ch Array

USB 3.0 using a a 4-ch Array and 2-ch Array

USB 3.0 using 4-ch Array and 2-ch Array

D-

D+

GND

SSTX-

SSTX+

SSRX-

SSRX+

USB 3.0 using a a 6-ch Array

USB 3.0 using 6-ch Array

USB 3.0 using a a 6-ch Array

USB 3.0 using 6-ch Array

USB 3.0 Connector

D+

SSTX-

SSTX+

GND

USB 3.0

Controller IC

USB 3.0 Connector

GND

USB 3.0

Controller IC

SSRX-

SSRX+

HDMI using 4-ch Arrays

Clock_N

Clock_P

Thunderbolt using 4-ch Arrays

ML_Lane3_N

ML_Lane3_P

GND

ML_Lane2_N

ML_Lane2_P

ML_Lane1_N

ML_Lane1_P

GND

ML_Lane0_N

ML_Lane0_P

HDMI Connector

GND

Data0_N

Data0_P

Data1_N

Data1_P

GND

Data2_N

Data2_P

HDMI Host

HDMI Host IC

HDMI Host

Controller IC

Controller

Controller IC

Thunderbolt Connector

Thunderbolt

Host

Host IC

Controller

Controller IC

te.com

TE Connectivity

Multi-channel Silicon ESD Flow-Through Arrays

INSERTION LOSS DIAGRAMS

Multi-Channel SESD Arrays

2

S21 Insertion Loss (dB)

0

-2

-4

-6

-8

-10

1.E+06

Application

HDMI 1.4 (1080P)

DisplayPort

HDMI 1.4 (max spec)*

USB3.0

eSATA

Thunderbolt

1.E+07

1.E+08

1.E+09

1.E+10

Bit Rate

(Gbps)

2.25

2.70

3.40

5.00

6.00

10.00

@Frequency

(GHz)

1.13

1.35

1.70

2.50

3.00

5.00

Insertion Loss

(dB)

-0.15

-0.20

-0.23

-0.29

-0.35

-0.50

Frequency (GHz)

* Devices are HDMI 4K / QuadHD resolutions (4096 x 2160) ready

MATERIAL INFORMATION

RoHS Compliant

ELV Compliant

Halogen Free*

Pb-Free

Directive 2000/53/EC

Compliant

Directive 2002/95/EC

Compliant

HF

Pb

* Halogen Free refers to: Br≤900ppm, Cl≤900ppm, Br+Cl≤1500ppm.

SESD devices meet MSL-1 Requirements

DFN case epoxy meets UL 94 V-0

te.com

参数名称	属性值
Manufacture	TE Connectivity
产品种类 Product Category	ESD Suppressors
RoHS	Yes
Channels	4 Channels
Breakdown Voltage	9 V
电容 Capacitance	0.2 pF
端接类型 Termination Style	SMD/SMT
封装 / 箱体 Package / Case	1004
工作温度范围 Operating Temperature Range	- 55 C to + 125 C
Clamping Voltage	9.18 V
Operating Voltage	9 V
系列 Packaging	Reel
工厂包装数量 Factory Pack Quantity	5000

	SESD1004Q4UG-0020-090	SESD0402Q2UG-0020-090	SESD1103Q6UG-0020-090	SESD0802Q4UG-0020-090
描述	esd suppressors 4-CH std 9V uni-Di .20pf 20kv Sesd	esd suppressors 2-CH 0402 9V uni-Di .20pf 20kv Sesd	esd suppressors 6-CH mini 9V uni-Di .20pf 20kv Sesd	esd suppressors 4-CH mini 9V uni-Di .20pf 20kv Sesd
Manufacture	TE Connectivity	TE Connectivity	TE Connectivity	TE Connectivity
产品种类 Product Category	ESD Suppressors	ESD Suppressors	ESD Suppressors	ESD Suppressors
RoHS	Yes	Yes	Yes	Yes
Channels	4 Channels	2 Channels	6 Channels	4 Channels
Breakdown Voltage	9 V	9 V	9 V	9 V
电容 Capacitance	0.2 pF	0.2 pF	0.2 pF	0.2 pF
端接类型 Termination Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	1004	0402 (1005 metric)	1103	0802
工作温度范围 Operating Temperature Range	- 55 C to + 125 C	- 55 C to + 125 C	- 55 C to + 125 C	- 55 C to + 125 C
Clamping Voltage	9.18 V	9.18 V	9.18 V	9.18 V
Operating Voltage	9 V	9 V	9 V	9 V
系列 Packaging	Reel	Reel	Reel	Reel
工厂包装数量 Factory Pack Quantity	5000	10000	5000	5000

SESD1004Q4UG-0020-090

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SESD1004Q4UG-0020-090概述

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