AP2530GY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low Gate Charge
▼
Low On-resistance
▼
Surface Mount Package
▼
RoHS Compliant & Halogen-Free
SOT-26
S2
G1
S1
D1
D2
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
N-CH BV
DSS
R
DS(ON)
G2
30V
72mΩ
3.3A
-30V
150mΩ
-2.3A
I
D
P-CH BV
DSS
R
DS(ON)
I
D
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-26 package is widely used for commercial-industrial
applications.
G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
N-channel
30
+20
3.3
2.6
10
1.14
0.01
-55 to 150
-55 to 150
P-channel
-30
+20
-2.3
-1.8
-10
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
110
Unit
℃/W
Data and specifications subject to change without notice
1
201003263
AP2530GY-HF
N-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.02
-
-
-
4
-
-
-
3
1
2
6
8
11
2
170
50
35
0.5
Max. Units
-
-
72
125
3
-
1
25
+100
5
-
-
-
-
-
-
270
-
-
0.8
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=3A
V
GS
=4.5V, I
D
=2A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=3A
V
DS
=30V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=3A
V
DS
=25V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=15Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=0.9A, V
GS
=0V
I
S
=3A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
14
7
Max. Units
1.3
-
-
V
ns
nC
2
AP2530GY-HF
P-CH Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-2A
V
GS
=-4.5V, I
D
=-1A
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-2A
V
DS
=-30V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-2A
V
DS
=-25V
V
GS
=-4.5V
V
DS
=-15V
I
D
=-1A
R
G
=3.3Ω,V
GS
=-5V
R
D
=15Ω
V
GS
=0V
V
DS
=-25V
f=1.0MHz
f=1.0MHz
Min.
-30
-
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
-
-
-
2
-
-
-
3
1
2
6
8
17
4
150
50
40
8
Max.
-
-
150
280
-3
-
-1
-25
+100
5
-
-
-
-
-
-
240
-
-
12
Unit
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=-1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-24V ,V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=-0.9A, V
GS
=0V
I
S
=2A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
15
7
Max.
-1.3
-
-
Unit
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP2530GY-HF
N-Channel
10
10
T
A
=25
o
C
8
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10 V
7.0 V
5.0 V
4.5 V
T
A
= 150
o
C
8
10 V
7.0 V
5.0 V
4.5 V
6
6
4
V
G
= 3.0 V
4
V
G
= 3.0 V
2
2
0
0
1
2
3
4
0
0
1
2
3
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
170
1.8
I
D
=3A
V
G
=10V
I
D
=2A
Normalized R
DS(ON)
10
R
DS(ON)
(m
Ω
)
130
T
A
=25
o
C
1.4
90
1.0
50
2
4
6
8
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
3
Normalized V
GS(th)
(V)
2
1.2
I
S
(A)
T
j
=150
o
C
T
j
=25
o
C
1
0.8
0
0
0.2
0.4
0.6
0.8
1
1.2
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP2530GY-HF
N-Channel
f=1.0MHz
12
1000
V
GS
, Gate to Source Voltage (V)
9
I
D
=3A
V
DS
= 25 V
C (pF)
C
iss
100
6
C
oss
3
C
rss
0
0
1
2
3
4
5
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.2
10
I
D
(A)
Operation in this
area limited by
R
DS(ON)
0.1
0.1
100us
1ms
0.05
1
0.02
0.01
P
DM
t
T
Single Pulse
10ms
0.1
0.01
T
A
=25 C
Single Pulse
0.01
0.01
0.1
1
10
o
100ms
1s
DC
100
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 180℃/W
0.001
0.0001
0.001
0.01
0.1
1
10
100
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
8
V
DS
=5V
T
j
=25
o
C
T
j
=150
o
C
V
G
Q
G
4.5V
I
D
, Drain Current (A)
6
4
Q
GS
Q
GD
2
Charge
0
0
2
4
6
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
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