AP2331GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Small Package Outline
▼
Surface Mount Device
▼
RoHS Compliant & Halogen-Free
SOT-23
D
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
S
G
-60V
0.8Ω
- 1A
Description
AP2331 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The special design SOT-23 package with good thermal performance is
widely preferred for all commercial-industrial surface mount applications
using infrared reflow technique and suited for voltage conversion or
switch applications.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@ 10V
Continuous Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
- 60
+20
-1
-0.75
-4
1.38
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
90
Unit
℃/W
1
201205291
Data and specifications subject to change without notice
AP2331GN-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-1A
V
GS
=-4.5V, I
D
=-0.5A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-1A
V
DS
=-48V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=-1A
V
DS
=-30V
V
GS
=-4.5V
V
DS
=-30V
I
D
=-1A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Min.
-60
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
2.5
-
-
3.5
1
1.5
6
7
17
3
215
26
20
Max. Units
-
0.8
1.5
-3
-
-25
+100
5.6
-
-
-
-
-
-
345
-
-
V
Ω
Ω
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-1A, V
GS
=0V
I
S
=-1.5A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
28
34
Max. Units
-1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2331GN-HF
5
2
T
A
=25 C
4
o
-I
D
, Drain Current (A)
-I
D
, Drain Current (A)
-10V
-7.0V
-6.0V
-5.0V
V
G
= -4.0V
T
A
= 150
o
C
1.6
3
1.2
65mΩ
-10V
-7.0V
-6.0V
-5.0V
V
G
= -4.0V
2
0.8
1
0.4
0
0
1
2
3
4
5
0
0
1
2
3
4
5
6
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
500
2
I
D
= -0.5A
T
A
=25
o
C
Normalized R
DS(ON)
460
I
D
= -1A
V
GS
= -10V
1.6
R
DS(ON)
(m
Ω
)
420
1.2
380
0.8
340
2
4
6
8
10
0.4
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
2
I
D
= -250uA
1.6
1.6
Normalized -V
GS(th)
-I
S
(A)
1.2
T
j
=150
o
C
T
j
=25
o
C
1.2
0.8
0.8
0.4
0.4
2.01E+08
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2331GN-HF
f=1.0MHz
10
400
I
D
= -1A
V
DS
= -30V
-V
GS
, Gate to Source Voltage (V)
8
300
6
C (pF)
65mΩ
C
iss
200
4
100
2
0
0
2
4
6
8
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10
1
DUTY=0.5
Operation in this area
limited by R
DS(ON)
1
100us
\
1ms
10ms
Normalized Thermal Response (R
thja
)
0.2
0.1
0.1
0.05
-I
D
(A)
0.1
0.02
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja = 270℃/W
100ms
0.01
0.01
T
A
=25 C
Single Pulse
0.001
0.01
0.1
1
10
100
1000
o
1s
DC
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
1.6
V
G
-I
D
, Drain Current (A)
1.2
Q
G
-4.5V
Q
GD
0.8
Q
GS
0.4
Charge
0
25
50
75
100
125
150
Q
T
A
, Ambient Temperature ( C )
o
Fig 11. Maximum Continuous Drain
Current v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4
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