MCP1710
Ultra-Low Quiescent Current LDO Regulator
Features
• Ultra-Low 20 nA (typical) Quiescent Current
• Ultra-Low Shutdown Supply Current:
0.1 nA (typical)
• 200 mA Output Current Capability for
V
OUT
< 3.5V
• 100 mA Output Current Capability for
V
OUT
> 3.5V
• Input Operating Voltage Range: 2.7V to 5.5V
• Standard Output Voltages:
- 1.2V, 1.8V, 2.5V, 3.3V, 4.2V
• Low-Dropout Voltage: 450 mV Maximum at
200 mA
• Stable with 1.0 µF Ceramic Output Capacitor
• Overcurrent Protection
• Space Saving, 8-Lead Plastic 2 x 2 VDFN-8
Description
The MCP1710 is a 200 mA for V
OUT
< 3.5V, 100 mA for
V
OUT
> 3.5V, low dropout (LDO) linear regulator that
provides high-current and low-output voltages, while
maintaining an ultra-low 20 nA of quiescent current
during device operation. In addition, the MCP1710 can
be shut down for an even lower 0.1 nA (typical) supply
current draw. The MCP1710 comes in five standard
fixed output voltage versions: 1.2V, 1.8V, 2.5V, 3.3V
and 4.2V. The 200 mA output current capability,
combined with the low output-voltage capability, make
the MCP1710 a good choice for new ultra-long-life LDO
applications that have high current demands, but
require ultra-low power consumption during sleep
states.
The MCP1710 is stable using ceramic output
capacitors that inherently provide lower output noise
and reduce the size and cost of the entire regulator
solution. Only 1 µF (2.2 µF recommended) of output
capacitance is needed to stabilize the LDO.
The MCP1710’s ultra-low quiescent and shutdown
current allows it to be paired with other ultra-low current
draw devices, such as Microchip’s nanoWatt XLP
technology devices, for a complete ultra-low power
solution.
Applications
•
•
•
•
•
Energy harvesting
Long-life battery powered applications
Smart cards
Ultra-Low consumption “Green” products
Portable electronics
Package Type
MCP1710
2 x 2 DFN*
GND 1
V
OUT
2
GND 3
GND 4
EP
9
8 SHDN
7 V
IN
6 FB
5 GND
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2012 Microchip Technology Inc.
DS25158A-page 1
MCP1710
Typical Application
V
IN
V
OUT
LOAD
+
-
C
IN
C
OUT
SHDN
GND
FB
Functional Block Diagram
V
IN
V
OUT
Overcurrent
Voltage
Reference
+
-
SHDN
FB
SHDN
GND
DS25158A-page 2
2012 Microchip Technology Inc.
MCP1710
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings †
Input Voltage, V
IN
.............................................................6.0V
Maximum Voltage on Any Pin ............... (GND – 0.3V) to 6.0V
Output Short Circuit Duration ....... ............................Unlimited
Storage temperature .................................... -65°C to +150°C
Maximum Junction Temperature, T
J
........................... +150°C
Operating Junction Temperature, T
J
...............-40°C to +85°C
ESD protection on all pins
2 kV HBM
AC/DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, V
IN
= V
R
+ 800 mV, V
IN(min)
= V
R
+ 0.3V, V
IN(max)
= 5.5V,
Note 1,
I
OUT
= 1 mA, C
IN
= C
OUT
= 2.2 µF (X7R Ceramic), T
A
= +25°C.
Boldface
type applies for junction
temperatures, T
J
(Note
4)
of
-40°C to +85°C
Parameters
Input Operating Voltage
Output Voltage Range
Input Quiescent Current
Input Quiescent Current
for SHDN Mode
Maximum Continuous
Output Current
Sym
V
IN
V
OUT
I
q
I
SHDN
I
OUT
Min
2.7
1.2
—
—
200
100
Current Limit
I
OUT
—
—
Output Voltage Regulation
Line Regulation
V
OUT
V
OUT
/
(V
OUT
x
V
IN
)
V
R
– 4%
V
R
– 2%
-2
-1
Typ
—
—
20
0.1
—
—
250
175
—
—
0.5
—
Max
5.5
4.2
—
—
—
—
—
—
V
R
+ 4%
V
R
+ 4%
2
1
Units
V
V
nA
nA
mA
mA
mA
mA
V
V
%/V
%/V
V
IN
= V
R
+ 0.8V to 5.5V,
I
OUT
= 0
SHDN = GND
V
IN
= V
R
+ 0.8V to 5.5V
1.2V
V
R
3.5V
V
IN
= V
R
+ 0.8V to 5.5V
3.5V
V
R
5.5V
V
OUT
= 0.9 x V
R
1.2V
V
R
3.5V
V
OUT
= 0.9 x V
R
3.5V
V
R
5.5V
V
R
< 1.8V (Note
2)
1.8V < V
R
< 5.5V (Note
2)
(Note
1)
V
IN
5V
V
R
< 1.8V, I
OUT
= 50 mA
(Note
1)
V
IN
5V
V
R
= 1.8V to 4.2V
I
OUT
= 50 mA
V
IN
= to 5.5V,
1.2V < V
R
< 3.5V
I
OUT
= 1 mA to 200 mA,
3.5V < V
R
< 5.5V
I
OUT
= 1 mA to 100 mA,
Conditions
Load Regulation
V
OUT
/V
OUT
-2
1
2
%
-2
Note 1:
2:
3:
4:
1
2
%
The minimum V
IN
must meet two conditions: V
IN
2.7V and V
IN
V
R
V
DROPOUT(MAX).
V
R
is the nominal regulator output voltage. V
R
= 1.2V, 2.5V, etc.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 3%
below its nominal value that was measured with an input voltage of V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
.
The junction temperature is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction
temperature over the ambient temperature is not significant.
2012 Microchip Technology Inc.
DS25158A-page 3
MCP1710
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, V
IN
= V
R
+ 800 mV, V
IN(min)
= V
R
+ 0.3V, V
IN(max)
= 5.5V,
Note 1,
I
OUT
= 1 mA, C
IN
= C
OUT
= 2.2 µF (X7R Ceramic), T
A
= +25°C.
Boldface
type applies for junction
temperatures, T
J
(Note
4)
of
-40°C to +85°C
Parameters
Dropout Voltage
Sym
V
DROPOUT
Min
—
—
Shutdown Input
Logic High Input
Logic Low Input
AC Performance
Output Delay From SHDN
Output Noise
T
OR
e
N
—
—
30
0.37
—
—
ms
SHDN = GND to V
IN
,
V
OUT
= GND to 95% V
R
V
SHDN-HIGH
V
SHDN-LOW
70
—
—
—
—
30
%V
IN
%V
IN
V
IN
= 2.7V to 5.5V
V
IN
= 2.7V to 5.5V
Typ
—
—
Max
450
400
Units
mV
mV
Conditions
I
OUT
= 200 mA
1.2V
V
R
3.5V,
Note 3
I
out
= 100mA
3.5V
V
R
5.5V,
Note 3
µV/Hz I
OUT
= 50 mA, f = 1 kHz,
C
OUT
= 2.2 µF (X7R Ceramic)
V
OUT
= 2.5V
dB
f = 100 Hz, I
OUT
= 10 mA,
V
INAC
= 200 mV pk-pk,
C
IN
= 0 µF
Power Supply Ripple Rejec-
tion Ratio
Note 1:
2:
3:
4:
PSRR
—
22
—
The minimum V
IN
must meet two conditions: V
IN
2.7V and V
IN
V
R
V
DROPOUT(MAX).
V
R
is the nominal regulator output voltage. V
R
= 1.2V, 2.5V, etc.
Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 3%
below its nominal value that was measured with an input voltage of V
IN
= V
OUT(MAX)
+ V
DROPOUT(MAX)
.
The junction temperature is approximated by soaking the device under test at an ambient temperature
equal to the desired junction temperature. The test time is small enough such that the rise in the junction
temperature over the ambient temperature is not significant.
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Unless otherwise noted, V
IN
= V
R
+ 800 mV, V
IN(min)
= V
R
+ 0.3V, V
IN(max)
= 5.5V,
Note 1,
I
OUT
= 1 mA, C
IN
= C
OUT
= 2.2 µF (X7R Ceramic), T
A
= +25°C.
Boldface
type applies for junction
temperatures, T
J
(Note
4)
of
-40°C to +85°C
Parameters
Temperature Ranges
Operating Junction
Temperature Range
Maximum Junction
Temperature
Storage Temperature Range
Thermal Package Resistances
Thermal Resistance,
2 x 2 VDFN-8
JA
JC
—
—
73.1
10.7
—
—
°C/W
°C/W
FR4 Board Only
1 oz. Copper JEDEC Standard Board
with Thermal Vias
T
J
T
J
T
A
-40
—
-65
—
—
—
+85
+150
+150
°C
°C
°C
Steady State
Transient
Sym
Min
Typ
Max
Units
Conditions
DS25158A-page 4
2012 Microchip Technology Inc.
MCP1710
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, C
OUT
= 2.2 µF Ceramic (X7R), C
IN
= 2.2 µF Ceramic (X7R), I
OUT
= 1 mA,
Temperature = +25°C, V
IN
= V
OUT
+ 0.8V, SHDN = 1 M pullup to V
IN
.
1.240
1.235
Out
tput Voltage (V)
1.230
1.225
1.220
1.215
1.210
1.205
1.200
1.195
2.5
3.0
3.5
4.0
4.5
Input Voltage (V)
5.0
5.5
T
J
= +85°C
T
J
= +25°C
I
OUT
= 0.1 mA
T
J
= -40°C
1.205
V
IN
= 2.5V
1.200
Out
tput Voltage (V)
1.195
1.190
1.185
1.180
1 180
1.175
1.170
0
50
T
J
= -40°C
T
J
= +25°C
T
J
= +85°C
100
150
Load Current (mA)
200
FIGURE 2-1:
Output Voltage vs. Input
Voltage (V
R
= 1.2V).
2.510
2.508
Out
tput Voltage (V)
2.506
2.504
2.502
2.500
2.498
2.496
2.494
2.5
3.0
3.5
4.0
4.5
Input Voltage (V)
5.0
5.5
T
J
= +85°C
T
J
= -40°C
FIGURE 2-4:
Output Voltage vs. Load
Current (V
R
= 1.2V).
2.5025
Ou
utput Voltage (V)
I
OUT
= 0.1 mA
T
J
= +25°C
2.5000
2.4975
T
J
= +25°C
T
J
= +85°C
V
IN
= 3.3V
T
J
= -40°C
2.4950
2.4925
2.4900
0
20
40
60
Load Current (mA)
80
100
FIGURE 2-2:
Output Voltage vs. Input
Voltage (V
R
= 2.5V).
4.252
Ou
utput Voltage (V)
FIGURE 2-5:
Output Voltage vs. Load
Current (V
R
= 2.5V).
4.25
Ou
utput Voltage (V)
4.248
4.244
4.240
4.236
I
OUT
= 0.1 mA
T
J
= -40°C
4.24
4.23
4.22
V
IN
= 4.15V
T
J
= +25°C
T
J
= -40°C
T
J
= +85°C
T
J
= +25°C
T
J
= +85°C
85°C
4.21
4.20
4.19
4.232
4.50
4.75
5.00
5.25
Input Voltage (V)
5.50
0
20
40
60
Load Current (mA)
80
100
FIGURE 2-3:
Output Voltage vs. Input
Voltage (V
R
= 4.2V).
FIGURE 2-6:
Output Voltage vs. Load
Current (V
R
= 4.2V).
2012 Microchip Technology Inc.
DS25158A-page 5