MCP111/112
Micropower Voltage Detector
Features
• Ultra-low supply current: 1.75 µA (max.)
• Precision monitoring options of:
- 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V,
4.38V and 4.63V
• Resets microcontroller in a power-loss event
• Active-low V
OUT
pin:
-
MCP111
active-low, open-drain
-
MCP112
active-low, push-pull
• Available in SOT23-3, TO-92 and SC70 packages
• Temperature Range:
- Extended: –40°C to +125°C
(except
MCP1XX-195)
- Industrial: –40°C to +85°C (MCP1XX-195
only)
Description
The MCP111/112 are voltage-detecting devices
designed to keep a microcontroller in reset until the
system voltage has reached, and stabilized, at the
appropriate level for reliable system operation. These
devices also operate as protection from brown-out
conditions when the system supply voltage drops
below a safe operating level. The MCP111 and
MCP112 are available in eight different trip voltages.
The MCP111 has an open-drain output with an active-
low pin (V
OUT
). This device will assert V
OUT
when the
voltage on the V
DD
pin is below the trip-point voltage.
The MCP112 has a push-pull output and will assert an
active-low signal (V
OUT
pin) when the voltage on the
V
DD
pin is below the trip-point voltage.
During operation, the output (V
OUT
) remains at a logic-
high as long as V
DD
is greater than the specified
threshold voltage. When V
DD
falls below the voltage
trip point, V
OUT
is driven low.
Applications
•
•
•
•
Critical µC and µP Power-monitoring Applications
Computers
Intelligent Instruments
Portable Battery-Powered Equipment
Package Types
SOT23-3/SC-70
Block Diagram
V
DD
V
OUT
1
MCP111/112
3
V
DD
Comparator
+
–
Output
Driver
V
OUT
V
SS
2
TO-92
Band Gap
Reference
V
OUT
V
DD
V
SS
V
SS
2004 Microchip Technology Inc.
DS21889B-page 1
MCP111/112
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum Rat-
ings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings†
V
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0V
Input current (V
DD
) . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Output current (RST) . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Rated Rise Time of V
DD
. . . . . . . . . . . . . . . . . . . . . . 100V/µs
All inputs and outputs w.r.t. V
SS
. . . . . –0.6V to (V
DD
+ 1.0V)
Storage temperature . . . . . . . . . . . . . . . . . . –65°C to + 150°C
Ambient temp. with power applied . . . . . . . –40°C to + 125°C
Maximum Junction temp. with power applied . . . . . . . . 150°C
ESD protection on all pins
. . . . . . . . . . . . . . . . . . . . . . . . . ≥
2 kV
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 kΩ (only
MCP111),
T
A
= –40°C to +125°C.
Parameters
Operating Voltage Range
Specified V
DD
Value to V
OUT
low
Operating Current
V
DD
Trip Point
MCP1XX-195
MCP1XX-240
MCP1XX-270
MCP1XX-290
MCP1XX-300
MCP1XX-315
MCP1XX-450
MCP1XX-475
V
DD
Trip Point Tempco
Threshold Hysteresis
(min.
= 1%, max = 6%)
MCP1XX-195
MCP1XX-240
MCP1XX-270
MCP1XX-290
MCP1XX-300
MCP1XX-315
MCP1XX-450
MCP1XX-475
Note 1:
Trip point is ±1.5% from typical value.
Trip point is ±2.5% from typical value.
T
TPCO
V
HYS
Sym
V
DD
V
DD
I
DD
V
TRIP
Min
1.0
1.0
—
1.872
1.853
2.285
2.262
2.591
2.564
2.857
2.828
2.886
2.857
3.034
3.003
4.314
4.271
4.561
4.514
—
0.019
0.023
0.026
0.029
0.029
0.031
0.044
0.046
Typ
—
—
<1
1.900
1.900
2.320
2.320
2.630
2.630
2.900
2.900
2.930
2.930
3.080
3.080
4.380
4.380
4.630
4.630
±100
—
—
—
—
—
—
—
—
1.75
1.929
1.948
2.355
2.378
2.670
2.696
2.944
2.973
2.974
3.003
3.126
3.157
4.446
4.490
4.700
4.746
—
0.114
0.139
0.158
0.174
0.176
0.185
0.263
0.278
Max
5.5
Units
V
V
µA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
ppm/
°C
V
V
V
V
V
V
V
V
T
A
= +25°C
T
A
= +25°C
(Note 1)
T
A
= -40°C to +85°C
(Note 2)
T
A
= +25°C
(Note 1)
Note 2
T
A
= +25°C
(Note 1)
Note 2
T
A
= +25°C
(Note 1)
Note 2
T
A
= +25°C
(Note 1)
Note 2
T
A
= +25°C
(Note 1)
Note 2
T
A
= +25°C
(Note 1)
Note 2
T
A
= +25°C
(Note 1)
Note 2
I
RST
= 10 µA, V
RST
< 0.2V
Conditions
2:
DS21889B-page 2
2004 Microchip Technology Inc.
MCP111/112
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 kΩ (only
MCP111),
T
A
= –40°C to +125°C.
Parameters
V
OUT
Low-level Output Voltage
V
OUT
High-level Output Voltage
Open-Drain Output Leakage Current
(MCP111 only)
Note 1:
Trip point is ±1.5% from typical value.
Trip point is ±2.5% from typical value.
Sym
V
OL
V
OH
I
OD
Min
—
V
DD
– 0.6
—
Typ
—
—
0.1
Max
0.4
—
—
Units
V
V
µA
Conditions
I
OL
= 500 µA, V
DD
= V
TRIP(MIN)
I
OH
= 1 mA, For only
MCP112
(push-pull output)
2:
V
TRIP
1V
V
DD
t
RPU
t
RPD
V
OH
1V
V
OUT
t
RT
V
OL
FIGURE 1-1:
Timing Diagram.
AC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 kΩ
(only
MCP111),
T
A
= –40°C to +125°C.
Parameters
V
DD
Detect to V
OUT
Inactive
V
DD
Detect to V
OUT
Active
Sym
t
RPU
t
RPD
Min
—
—
Typ
90
130
Max
—
—
Units
µs
µs
Conditions
Figure 1-1
and C
L
= 50 pF
(Note 1)
V
DD
ramped from V
TRIP(MAX)
+
250 mV down to V
TRIP(MIN)
–
250 mV, per
Figure 1-1,
C
L
= 50 pF
(Note 1)
For V
OUT
10% to 90% of final
value per
Figure 1-1,
C
L
= 50 pF
(Note 1)
V
OUT
Rise Time After V
OUT
Active
t
RT
—
5
—
µs
Note 1:
These parameters are for design guidance only and are not 100% tested.
2004 Microchip Technology Inc.
DS21889B-page 3
MCP111/112
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 kΩ
(only
MCP111),
T
A
= –40°C to +125°C.
Parameters
Temperature Ranges
Specified Temperature Range
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Resistances
Thermal Resistance, 3L-SOT23
Thermal Resistance, 3L-SC-70
Thermal Resistance, 3L-TO92
θ
JA
θ
JA
θ
JA
—
—
—
336
340
131.9
—
—
—
°C/W
°C/W
°C/W
T
A
T
A
T
J
T
A
–40
–40
—
–65
—
—
—
—
+85
+125
+150
+150
°C
°C
°C
°C
MCP1XX-195
Except
MCP1XX-195
Sym
Min
Typ
Max
Units
Conditions
DS21889B-page 4
2004 Microchip Technology Inc.
MCP111/112
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated, all limits are specified for V
DD
= 1V to 5.5V, R
PU
= 100 kΩ (only
MCP111;
see
Figure 4-1),
T
A
= –40°C to +125°C.
1.6
1.4
1.2
I
DD
(uA)
I
DD
(uA)
1
0.8
0.6
0.4
0.2
0
-40
-20
0
20
40
60
80
100
120
140
Temperature (°C)
4.0V
2.8V
2.1V
1.7V
1.0V
1.6
MCP111-195
5.5V
5.0V
1.4
1.2
1
0.8
0.6
0.4
0.2
0
MCP111-195
+125°C
+85°C
-40°C
+25°C
1.0
2.0
3.0
V
DD
(V)
4.0
5.0
6.0
FIGURE 2-1:
(MCP111-195).
1.2
1
I
DD
(uA)
0.8
0.6
0.4
I
DD
vs. Temperature
FIGURE 2-4:
I
DD
vs. V
DD
(MCP111-195).
MCP112-300
5.5V
5.0V
4.0V
2.8V
1.7V
2.1V
1.6
1.4
1.2
I
DD
(uA)
1
0.8
0.6
0.4
0.2
0
1.0
2.0
+85°C
-40°C
+25°C
+125°C
MCP112-300
0.2
0
20
40
60
80
100
120
-40
-20
0
1.0V
140
3.0
4.0
V
DD
(V)
5.0
6.0
Temperature (°C)
FIGURE 2-2:
(MCP112-300).
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
DD
vs. Temperature
FIGURE 2-5:
I
DD
vs. V
DD
(MCP112-300).
1.6
MCP112-475
4.0V
2.8V
5.5V
2.1V
1.4
1.2
I
DD
(uA)
1
0.8
0.6
0.4
0.2
0
MCP112-475
5.0V
I
DD
(uA)
+125°C
+85°C
-40°C
+25°C
1.7V
1.0V
20
40
60
-40
-20
80
100
120
140
1.0
2.0
3.0
V
DD
(V)
4.0
5.0
6.0
0
Temperature (°C)
FIGURE 2-3:
(MCP112-475).
I
DD
vs. Temperature
FIGURE 2-6:
I
DD
vs. V
DD
(MCP112-475).
2004 Microchip Technology Inc.
DS21889B-page 5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
