Operating Temperature Range .......................... -40°C to +85°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................ +300°C
Soldering Temperature (reflow) ...................................... +260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
RS+
= 0 to +28V, V
CC
= +3V to +28V, V
SENSE
= 0V, T
A
= T
MIN
to T
MAX
, R
LOAD
=
∞
unless otherwise noted. Typical values are at
T
A
= +25°C.) (Note 1)
PARAMETER
Operating Voltage Range
Common-Mode Input Range
Common-Mode Rejection
Supply Current
Leakage Current
SYMBOL
V
CC
V
CMR
CMR
I
CC
I
RS+
, I
RS-
I
RS+
Input Bias Current
I
RS-
Full-Scale Sense Voltage
V
SENSE
(Note 2)
V
RS+
> +2.0V
V
RS+
> +2.0V, V
CC
> 12V
V
CC
= 0V, V
RS+
= 28V
V
RS+
> +2.0V
V
RS+
≤
+2.0V
V
RS+
> +2.0V
V
RS+
≤
+2.0V
V
SENSE
= V
RS+
- V
RS-
V
SENSE
= +100mV, V
CC
= +12V, V
RS+
= +12V
V
SENSE
= +100mV, V
CC
= +12V, V
RS+
= +12V,
T
A
= +25°C
Total OUT Voltage Error
(Note 3)
V
SENSE
= +100mV, V
CC
= +28V, V
RS+
= +28V
V
SENSE
= +100mV, V
CC
= +12V, V
RS+
= +0.1V
V
CC
= +12V, V
RS+
= +12V, V
SENSE
= +6.25mV
(Note 4)
MAX4173T, V
CC
= +3.0V, V
RS+
= 28V,
V
SENSE
= 250mV
Out High Voltage (Note 5)
(V
CC
- V
OH
)
MAX4173F, V
CC
= +7.5V, V
RS+
= 28V,
V
SENSE
= 250mV
MAX4173H, V
CC
= +15V, V
RS+
= 28V,
V
SENSE
= 250mV
OUT Low Voltage
V
OL
MAX4173TEUT,
T
A
= +25°C
V
CC
= +5V, V
RS+
= 0.89V,
T
A
= -40°C to +85°C
V
SENSE
= 0mV
0
-350
0
-700
150
±0.5
0.5
0.5
-9
±7.5
0.8
0.8
0.8
1.2
1.2
1.2
1.2
5
mV
40
V
5.75
3.25
5.75
±24
%
CONDITIONS
Guaranteed by PSR test
MIN
3
0
90
0.42
0.3
1.0
3
50
50
100
100
mV
µA
TYP
MAX
28
28
UNITS
V
V
dB
mA
µA
2
Maxim Integrated
MAX4173
Low-Cost, SOT23, Voltage-Output,
High-Side Current-Sense Amplifier
ELECTRICAL CHARACTERISTICS (continued)
(V
RS+
= 0 to +28V, V
CC
= +3V to +28V, V
SENSE
= 0V, T
A
= T
MIN
to T
MAX
, R
LOAD
=
∞
unless otherwise noted. Typical values are at
T
A
= +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MAX4173T,
V
SENSE
= +100mV
V
RS+
= +12V,
V
CC
= +12V,
C
LOAD
= 5pF
MAX4173F,
V
SENSE
= +100mV
MAX4173H,
V
SENSE
= +100mV
V
SENSE
= +6.25mV
(Note 4)
MAX4173T
Gain
A
V
MAX4173F
MAX4173H
∆A
V
Gain Accuracy
∆A
V
Input Offset Voltage
(Note 6)
MAX4173H V
SENSE
=
+10mV to +100mV,
V
CC
= V
RS+
= 12V
MAX4173TEUT,
V
RS+
= 12V
V
CC
= +12V, V
RS+
= 12V,
C
LOAD
= 5pF
R
OUT
MAX4173T, V
SENSE
= 80mV, V
RS+
≥
+2V
Power-Supply Rejection
Power-Up Time to 1% of
Final Value
Saturation Recovery Time
PSR
MAX4173F, V
SENSE
= 32mV, V
RS+
≥
+2V
MAX4173H, V
SENSE
= 16mV, V
RS+
≥
+2V
V
SENSE
= +100mV, C
LOAD
= 5pF
V
CC
= +12V, V
RS+
= 12V (Note 7)
60
60
60
T
A
= +25°C
T
A
= -40°C to +85°C
T
A
= +25°C
T
A
= -40°C to +85°C
V
SENSE
= +6.25mV
to +100mV
V
SENSE
= +100mV
to +6.25mV
400
ns
800
12
84
91
95
10
10
µs
µs
dB
kΩ
0.3
0.5
±2.5
4.0
±3
±5
mV
MAX4173T/F V
SENSE
=
+10mV to +150mV,
V
CC
= V
RS+
= 12V
T
A
= +25°C
T
A
= -40°C to +85°C
MIN
TYP
1.7
1.4
MHz
1.2
0.6
20
50
100
0.5
±2.5
4.0
%
V/V
MAX
UNITS
Bandwidth
BW
V
OS
OUT Settling Time to 1% of
Final Value
OUT Output Resistance
Note 1:
All devices are 100% production tested at T
A
= +25°C. All temperature limits are guaranteed by design.
Note 2:
Guaranteed by Total Output Voltage Error Test.
Note 3:
Total OUT Voltage Error is the sum of gain and offset voltage errors.
Note 4:
+6.25mV = 1/16 of +100mV full-scale voltage.
Note 5:
V
SENSE
such that output stage is in saturation.
Note 6:
V
OS
is extrapolated from the Gain Accuracy tests.
Note 7:
The device does not experience phase reversal when overdriven.
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
NXP MCU
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