Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
PARAMETER
GENERAL
Supply Voltage Range
Quiescent Current
Shutdown Current
Turn-On Time
Input Resistance
Input Bias Voltage
Voltage Gain
(V
DD
= PV
DD
= V
SHDN
= 3.3V,
V
GND
= V
PGND
= 0V, SYNC = GND (FFM), R
L
= 8Ω, R
L
connected between OUT+ and OUT-,
T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at T
A
= +25°C.) (Notes 1, 2)
SYMBOL
V
DD
I
SHDN
R
IN
t
ON
T
A
= +25°C
Either input
MAX9700A
MAX9700B
MAX9700C
MAX9700D
Output Offset Voltage
Common-Mode Rejection Ratio
Power-Supply Rejection Ratio
(Note 3)
Output Power
V
OS
CMRR
PSRR
P
OUT
T
A
= +25°C
T
MIN
≤ T
A
≤ T
MAX
12
0.73
I
DD
CONDITIONS
Inferred from PSRR test
MIN
2.5
4
0.1
30
20
0.83
6
12
15.6
20
±11
72
50
70
72
55
450
800
0.01
%
0.01
mW
dB
±80
±120
mV
dB
dB
0.93
TYP
MAX
5.5
5.2
10
UNITS
V
mA
µA
ms
kΩ
V
V
BIAS
A
V
f
IN
= 1kHz, input referred
200mV
P-P
ripple
THD+N = 1%
V
DD
= 2.5V to 5.5V, T
A
= +25°C
f
RIPPLE
= 217Hz
f
RIPPLE
= 20kHz
R
L
= 8Ω
R
L
= 6Ω
R
L
= 8Ω,
P
OUT
= 125mW
R
L
= 6Ω,
P
OUT
= 125mW
Total Harmonic Distortion
Plus Noise
THD+N
f
IN
= 1kHz, either
FFM or SSM
www.maximintegrated.com
Maxim Integrated
│
2
MAX9700
1.2W, Low-EMI, Filterless,
Class D Audio Amplifier
Electrical Characteristics (continued)
PARAMETER
Signal-to-Noise Ratio
SYMBOL
SNR
(V
DD
= PV
DD
= V
SHDN
= 3.3V,
V
GND
= V
PGND
= 0V, SYNC = GND (FFM), R
L
= 8Ω, R
L
connected between OUT+ and OUT-,
T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at T
A
= +25°C.) (Notes 1, 2)
CONDITIONS
V
OUT
= 2V
RMS
SYNC = GND
Oscillator Frequency
SYNC Frequency Lock Range
Efficiency
DIGITAL INPUTS (SHDN, SYNC)
Input Thresholds
SHDN
Input Leakage Current
SYNC Input Current
η
P
OUT
= 500mW, f
IN
= 1kHz
V
IH
V
IL
2
0.8
±1
±5
f
OSC
SYNC = unconnected
SYNC = V
DD
(SSM mode)
800
94
BW = 22Hz
to 22kHz
A-weighted
FFM
SSM
FFM
SSM
980
1280
MIN
TYP
89
87
92
90
1100
1450
1220
±120
2000
1220
1620
kHz
kHz
%
V
µA
µA
dB
MAX
UNITS
(V
DD
= PV
DD
= V
SHDN
= 5V,
V
GND
= V
PGND
= 0V, SYNC = GND (FFM), R
L
= 8Ω, R
L
connected between OUT+ and OUT-, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at T
A
= +25°C.) (Notes 1, 2)
PARAMETER
Quiescent Current
Shutdown Current
Common-Mode Rejection Ratio
Power-Supply Rejection Ratio
Output Power
Total Harmonic Distortion
Plus Noise
SYMBOL
I
SHDN
I
DD
CONDITIONS
MIN
TYP
5.2
0.1
f = 1kHz, input referred
200mV
P-P
ripple
THD+N = 1%
f = 1kHz, either
FFM or SSM
V
OUT
=
3V
RMS
f = 217Hz
f = 20kHz
R
L
= 16Ω
R
L
= 8Ω
R
L
= 6Ω
72
72
55
700
1200
1600
0.015
0.02
92.5
90.5
95.5
93.5
dB
%
mW
MAX
UNITS
mA
µA
dB
dB
Electrical Characteristics
CMRR
PSRR
P
OUT
THD+N
R
L
= 8Ω, P
OUT
= 125mW
R
L
= 4Ω, P
OUT
= 125mW
FFM
SSM
FFM
SSM
Signal-to-Noise Ratio
SNR
BW = 22Hz to
22kHz
A-weighted
Note 1:
All devices are 100% production tested at T
A
= +25°C. All temperature limits are guaranteed by design.
Note 2:
Testing performed with a resistive load in series with an inductor to simulate an actual speaker load. For R
L
= 4Ω, L = 33μH.
For R
L
= 8Ω, L = 68μH. For R
L
= 16Ω, L = 136μH.
Note 3:
PSRR is specified with the amplifier inputs connected to GND through C
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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