74HC1G66; 74HCT1G66
Single-pole single-throw analog switch
Rev. 04 — 19 December 2008
Product data sheet
1. General description
74HC1G66 and 74HCT1G66 are high-speed Si-gate CMOS devices. They are single-pole
single-throw analog switches. The switch has two input/output pins (Y and Z) and an
active HIGH enable input pin (E). When pin E is LOW, the analog switch is turned off.
The non-standard output currents are equal to those of the 74HC4066 and 74HCT4066.
2. Features
I
Wide supply voltage range from 2.0 V to 10.0 V for the 74HC1G66
I
Very low ON resistance:
N
45
Ω
(typ.) at V
CC
= 4.5 V
N
30
Ω
(typ.) at V
CC
= 6.0 V
N
25
Ω
(typ.) at V
CC
= 9.0 V
I
High noise immunity
I
Low power dissipation
I
Multiple package options
I
ESD protection:
N
HBM JESD22-A114E exceeds 2000 V
N
MM JESD22-A115-A exceeds 200 V
I
Specified from
−40 °C
to +85
°C
and
−40 °C
to +125
°C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC1G66GW
74HCT1G66GW
74HC1G66GV
74HCT1G66GV
−40 °C
to +125
°C
SC-74A
−40 °C
to +125
°C
Name
TSSOP5
Description
plastic thin shrink small outline package;
5 leads; body width 1.25 mm
plastic surface-mounted package; 5 leads
Version
SOT353-1
SOT753
Type number
NXP Semiconductors
74HC1G66; 74HCT1G66
Single-pole single-throw analog switch
4. Marking
Table 2.
Marking codes
Marking
HL
TL
H66
T66
Type number
74HC1G66GW
74HCT1G66GW
74HC1G66GV
74HCT1G66GV
5. Functional diagram
E
Z
Y
Y
Z
E
001aag487
001aah372
Fig 1. Logic symbol
Fig 2. Logic diagram
6. Pinning information
6.1 Pinning
74HC1G66
74HCT1G66
Y
Z
1
2
5
V
CC
GND
3
001aaf185
4
E
Fig 3.
Pin configuration SOT353-1 and SOT753
6.2 Pin description
Table 3.
Symbol
Y
Z
GND
E
V
CC
Pin description
Pin
1
2
3
4
5
Description
independent input or output
independent input or output
ground (0 V)
enable input (active HIGH)
supply voltage
74HC_HCT1G66_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 19 December 2008
2 of 18
NXP Semiconductors
74HC1G66; 74HCT1G66
Single-pole single-throw analog switch
7. Functional description
Table 4.
Input E
L
H
[1]
H = HIGH voltage level; L = LOW voltage level.
Function table
[1]
Switch
OFF
ON
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
SK
I
SW
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
switch clamping current
switch current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
SW
>
−0.5
V or V
SW
< V
CC
+ 0.5 V
[1]
[1]
Min
−0.5
-
-
-
-
−50
−65
Max
+11.0
±20
±20
±25
50
-
+150
250
Unit
V
mA
mA
mA
mA
mA
°C
mW
T
amb
=
−40 °C
to +125
°C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP5 and SC-74A packages: above 87.5
°C
the value of P
tot
derates linearly with 4.0 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
[1]
Symbol Parameter
V
CC
V
I
V
SW
T
amb
∆t/∆V
supply voltage
input voltage
switch voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
CC
= 10.0 V
[1]
Conditions
Min
2.0
0
0
−40
-
-
-
-
74HC1G66
Typ
5.0
-
-
+25
-
1.67
-
-
Max
10.0
V
CC
V
CC
+125
625
139
83
35
Min
4.5
0
0
−40
-
-
-
-
74HCT1G66
Typ
5.0
-
-
+25
-
1.67
-
-
Max
5.5
V
CC
V
CC
+125
-
139
-
-
Unit
V
V
V
°C
ns/V
ns/V
ns/V
ns/V
To avoid drawing V
CC
current out of pin Z, when switch current flows in pin Y, the voltage drop across the bidirectional switch must not
exceed 0.4 V. If the switch current flows into pin Z, no V
CC
current will flow out of terminal Y. In this case there is no limit for the voltage
drop across the switch, but the voltage at pins Y and Z may not exceed V
CC
or GND.
74HC_HCT1G66_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 19 December 2008
3 of 18
NXP Semiconductors
74HC1G66; 74HCT1G66
Single-pole single-throw analog switch
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HC1G66
V
IH
HIGH-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
CC
= 9.0 V
V
IL
LOW-level input
voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
CC
= 9.0 V
I
I
input leakage
current
E; V
I
= V
CC
or GND
V
CC
= 6.0 V
V
CC
= 10.0 V
I
S(OFF)
I
S(ON)
I
CC
OFF-state leakage
current
ON-state leakage
current
supply current
Y or Z; V
CC
= 10 V; see
Figure 4
Y or Z; V
CC
= 10 V; see
Figure 5
E, Y or Z; V
I
= V
CC
or GND;
V
SW
= GND or V
CC
V
CC
= 6.0 V
V
CC
= 10.0 V
C
I
C
S(ON)
input capacitance
ON-state
capacitance
-
-
-
-
1.0
2.0
1.5
8
10
20
-
-
-
-
-
-
20
40
-
-
µA
µA
pF
pF
-
-
-
-
0.1
0.2
0.1
0.1
1.0
2.0
1.0
1.0
-
-
-
-
1.0
2.0
1.0
1.0
µA
µA
µA
µA
1.5
3.15
4.2
6.3
-
-
-
-
1.2
2.4
3.2
4.7
0.8
2.1
2.8
4.3
-
-
-
-
0.5
1.35
1.8
2.7
1.5
3.15
4.2
6.3
-
-
-
-
-
-
-
-
0.5
1.35
1.8
2.7
V
V
V
V
V
V
V
V
Conditions
−40 °C
to +85
°C
Min
Typ
[1]
Max
−40 °C
to +125
°C
Unit
Min
Max
74HC_HCT1G66_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 19 December 2008
4 of 18
NXP Semiconductors
74HC1G66; 74HCT1G66
Single-pole single-throw analog switch
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HCT1G66
V
IH
V
IL
I
I
I
S(OFF)
I
S(ON)
I
CC
HIGH-level input
voltage
LOW-level input
voltage
input leakage
current
OFF-state leakage
current
ON-state leakage
current
supply current
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
E; V
I
= V
CC
or GND; V
CC
= 5.5 V
Y or Z; V
CC
= 5.5 V; see
Figure 4
Y or Z; V
CC
= 5.5 V; see
Figure 5
E, Y or Z; V
I
= V
CC
or GND;
V
SW
= GND or V
CC
;
V
CC
= 4.5 V to 5.5 V
V
I
= V
CC
−
2.1 V; V
CC
= 4.5 V to 5.5 V;
I
O
= 0 A
2.0
0.1
-
-
-
-
1.6
1.2
0.1
0.1
0.1
1
-
0.8
1.0
1.0
1.0
10
2.0
-
-
-
-
-
-
0.8
1.0
1.0
1.0
20
V
V
µA
µA
µA
µA
Conditions
−40 °C
to +85
°C
Min
Typ
[1]
Max
−40 °C
to +125
°C
Unit
Min
Max
∆I
CC
C
I
C
S(ON)
additional supply
current
input capacitance
ON-state
capacitance
-
-
-
-
1.5
8
500
-
-
-
-
-
850
-
-
µA
pF
pF
[1]
Typical values are measured at T
amb
= 25
°C.
10.1 Test circuits
V
CC
V
IL
I
S
VI
V
CC
V
IH
Y
I
S
VO
VI
E
Z
GND
E
Z
GND
Y
I
S
VO
001aag488
001aag489
V
I
= V
CC
or GND and V
O
= GND or V
CC
.
V
I
= V
CC
or GND and V
O
= open circuit.
Fig 4. Test circuit for measuring OFF-state
leakage current
Fig 5. Test circuit for measuring ON-state
leakage current
74HC_HCT1G66_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 19 December 2008
5 of 18
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