DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D054
BZV55 series
Voltage regulator diodes
Product specification
Supersedes data of 1999 May 21
2002 Feb 28
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES
•
Total power dissipation: max. 500 mW
•
Two tolerance series:
±2%,
and approx.
±5%
•
Working voltage range: nom. 2.4 to 75 V (E24 range)
•
Non-repetitive peak reverse power dissipation:
max. 40 W.
APPLICATIONS
•
Low voltage stabilizers or voltage references.
DESCRIPTION
Low-power voltage regulator diodes in small hermetically
sealed glass SOD80C SMD packages. The diodes are
available in the normalized E24
±2%
(BZV55-B) and
approx.
±5%
(BZV55-C) tolerance range. The series
consists of 37 types with nominal working voltages from
2.4 to 75 V.
k
BZV55 series
columns
a
MAM215
The cathode is indicated by a yellow band.
Fig.1
Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on a ceramic substrate of 10
×
10
×
0.6 mm.
PARAMETER
continuous forward current
non-repetitive peak reverse current
total power dissipation
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave;
T
j
= 25
°C
prior to surge
T
amb
≤
50
°C;
note 1
tie-point
≤
50
°C;
note 1
CONDITIONS
−
MIN.
MAX.
250
UNIT
mA
see Tables 1 and 2 A
−
−
400
500
40
+200
+200
mW
mW
W
°C
°C
t
p
= 100
µs;
square wave;
−
T
j
= 25
°C
prior to surge; see Fig.3
−65
−65
2002 Feb 28
2
Philips Semiconductors
Product specification
Voltage regulator diodes
ELECTRICAL CHARACTERISTICS
Total BZV55-B and BZV55-C series
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZV55-B/C2V4
BZV55-B/C2V7
BZV55-B/C3V0
BZV55-B/C3V3
BZV55-B/C3V6
BZV55-B/C3V9
BZV55-B/C4V3
BZV55-B/C4V7
BZV55-B/C5V1
BZV55-B/C5V6
BZV55-B/C6V2
BZV55-B/C6V8
BZV55-B/C7V5
BZV55-B/C8V2
BZV55-B/C9V1
BZV55-B/C10
BZV55-B/C11
BZV55-B/C12
BZV55-B/C13
BZV55-B/C15 to BZV55-B/C75
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 0.7V
Znom
CONDITIONS
I
F
= 10 mA; see Fig.4
BZV55 series
MAX.
0.9
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
UNIT
V
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
2002 Feb 28
3
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Table 1
Per type, BZV55-B/C2V4 to BZV55-B/C24
T
j
= 25
°C
unless otherwise specified.
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 5 and 6)
NON-REPETITIVE PEAK
DIODE CAP.
REVERSE CURRENT
C
d
(pF)
at f = 1 MHz;
I
ZSM
(A)
V
R
= 0 V
at t
p
= 100
µs;
T
amb
= 25
°C
2002 Feb 28
at I
Ztest
= 1 mA
at I
Ztest
= 5 mA
TYP.
70
75
80
85
85
85
0
0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
7.4
8.4
7.0
9.2
10.4
45
55
20
25
55
70
12.4
12.3
14.1
15.9
9.4
11.4
12.4
14.4
15.6
17.6
19.6
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
300
300
300
450
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
450
6.0
80
50
40
15
6
6
6
6
6
8
10
10
10
10
10
10
15
40
30
30
25
6.0
20
5.4
20
4.5
6.4
15
3.8
5.5
15
3.2
4.6
15
2.5
4.0
15
1.2
3.0
10
0.4
2.3
40
−2.0
1.2
60
−2.7
−0.8
80
−3.5
−1.4
90
−3.5
−2.5
90
−3.5
−2.5
90
−3.5
0
450
6.0
−2.4
95
−3.5
0
450
6.0
−2.4
95
−3.5
0
450
6.0
−2.1
100
−3.5
0
450
6.0
−2.0
100
−3.5
0
450
6.0
−1.6
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
TYP.
275
300
325
350
375
400
410
425
400
80
40
30
30
40
40
50
50
50
50
50
50
50
60
60
60
250
250
225
225
200
200
170
150
150
150
100
80
80
80
150
400
480
500
600
600
600
600
600
600
600
MAX.
Philips Semiconductors
BZV55-
Bxxx
Cxxx
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 5 mA
Tol.
±2%
(B)
Tol. approx.
±5%
(C)
MIN.
MAX.
MIN.
MAX.
2V4
2.35
2.45
2.2
2.6
2V7
2.65
2.75
2.5
2.9
Voltage regulator diodes
3V0
2.94
3.06
2.8
3.2
3V3
3.23
3.37
3.1
3.5
3V6
3.53
3.67
3.4
3.8
3V9
3.82
3.98
3.7
4.1
4V3
4.21
4.39
4.0
4.6
4V7
4.61
4.79
4.4
5.0
5V1
5.00
5.20
4.8
5.4
4
5V6
5.49
5.71
5.2
6.0
6V2
6.08
6.32
5.8
6.6
6V8
6.66
6.94
6.4
7.2
7V5
7.35
7.65
7.0
7.9
8V2
8.04
8.36
7.7
8.7
9V1
8.92
9.28
8.5
9.6
10
9.80
10.20
9.4
10.6
11
10.80
11.20
10.4
11.6
12
11.80
12.20
11.4
12.7
13
12.70
13.30
12.4
14.1
15
14.70
15.30
13.8
15.6
16
15.70
16.30
15.3
17.1
18
17.60
18.40
16.8
19.1
20
19.60
20.40
18.8
21.2
22
21.60
22.40
20.8
23.3
BZV55 series
Product specification
24
23.50
24.50
22.8
25.6
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Table 2
Per type, BZV55-B/C27 to BZV55-B/C75
T
j
= 25
°C
unless otherwise specified.
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 2 mA
(see Figs 5 and 6)
NON-REPETITIVE PEAK
DIODE CAP.
REVERSE CURRENT
C
d
(pF)
at f = 1 MHz;
I
ZSM
(A)
V
R
= 0 V
at t
p
= 100
µs;
T
amb
= 25
°C
2002 Feb 28
at I
Ztest
= 0.5 mA at I
Ztest
= 2 mA
TYP.
65
70
75
80
80
85
85
90
100
120
150
170
500
95
255
73.4
80.2
88.6
475
90
240
65.6
71.7
79.8
35
35
450
80
215
58.8
64.4
71.6
35
425
70
200
42.2
52.0
63.8
40
400
60
180
38.6
46.9
57.2
40
375
50
170
35.0
42.9
51.8
40
0.5
0.4
0.3
0.3
0.25
0.2
375
45
150
31.4
38.8
46.6
40
0.6
350
40
130
28.7
34.8
41.2
45
0.7
350
35
90
26.0
31.8
37.4
45
0.8
325
35
80
23.3
28.7
33.4
45
0.9
300
30
80
20.6
25.7
29.4
50
1.0
300
25
80
18.0
22.7
25.3
50
1.0
MAX.
TYP.
MAX.
MIN.
TYP.
MAX.
MAX.
MAX.
Philips Semiconductors
BZV55-
Bxxx
Cxxx
WORKING VOLTAGE
V
Z
(V)
at I
Ztest
= 2 mA
Tol.
±2%
(B)
Tol. approx.
±5%
(C)
MIN.
MAX.
MIN.
MAX.
27
26.50
27.50
25.1
28.9
30
29.40
30.60
28.0
32.0
Voltage regulator diodes
33
32.30
33.70
31.0
35.0
36
35.30
36.70
34.0
38.0
39
38.20
39.80
37.0
41.0
43
42.10
43.90
40.0
46.0
47
46.10
47.90
44.0
50.0
51
50.00
52.00
48.0
54.0
56
54.90
57.10
52.0
60.0
5
62
60.80
63.20
58.0
66.0
68
66.60
69.40
64.0
72.0
75
73.50
76.50
70.0
79.0
BZV55 series
Product specification
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