20ETS..PbF, 20ATS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 20 A
20ETS..PbF
20ATS..PbF
DESCRIPTION/FEATURES
The 20ETS..PbF/20ATS..PbF rectifier High
Voltage Series has been optimized for very low
forward voltage drop, with moderate leakage.
The glass passivation technology used has
reliable operation up to 150 °C junction
temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.
This product series has been designed and qualified for
industrial level.
Compliant to RoHS directive 2002/95/EC.
Base
cathode
2
Cathode to
base
2
1
Cathode
3
Anode
1
Anode
3
Anode
TO-220AC
TO-220AB
PRODUCT SUMMARY
V
F
at 10 A
I
FSM
V
RRM
1V
300 A
800/1200 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
16.3
THREE-PHASE BRIDGE
21
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
20
800/1200
300
1.0
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
20ETS08PbF, 20ATS08PbF
20ETS12PbF, 20ATS12PbF
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
I
RRM
AT 150 °C
mA
1
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94341
Revision: 14-Jul-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
20ETS..PbF, 20ATS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 20 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 105 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
A
2
s
A
2
√s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.1
10.4
0.85
0.1
1.0
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AC
Marking device
Case style TO-220AB
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
- 40 to 150
1.3
°C/W
0.5
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
UNITS
°C
Mounting torque
20ETS08
20ETS12
20ATS08
20ATS12
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For technical questions, contact:
diodestech@vishay.com
Document Number: 94341
Revision: 14-Jul-09
20ETS..PbF, 20ATS..PbF High Voltage Series
Input Rectifier Diode, 20 A
Vishay High Power Products
150
35
Maxiumum Average Forward
Power Loss (W)
R
thJC
(DC) = 1.3 °C/W
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
Ø
30
25
20
Conduction angle
DC
180°
120°
90°
60°
30°
RMS limit
15
10
5
0
Ø
30°
90
60°
90° 120°
180°
Conduction period
T
J
= 150 °C
0
5
10
15
20
25
0
2
4
6
8
10 12 14 16 18 20 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
300
R
thJC
(DC) = 1.3 °C/W
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
Ø
Peak Half Sine Wave
Forward Current (A)
250
At any rated load condition and
with
rated
V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction period
200
150
30°
60°
90°
120°
180°
DC
100
50
0
5
10
15
20
25
30
35
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
30
Maxiumum Average Forward
Power Loss (W)
25
20
15
10
5
Peak Half Sine Wave
Forward Current (A)
180°
120°
90°
60°
30°
RMS limit
300
250
Maximum non-repetitive surge current
versus
pulse train duration.
Initial T
J
= 150 °C
No voltage
reapplied
Rated
V
RRM
reapplied
200
150
Ø
Conduction angle
T
J
= 150 °C
0
100
50
0
4
8
12
16
20
24
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94341
Revision: 14-Jul-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
20ETS..PbF, 20ATS..PbF High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 20 A
Instantaneous Forward Current (A)
1000
T
J
= 25 °C
100
T
J
= 150 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
10
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state
value
(DC operation)
1
0.1
Single pulse
0.01
0.0001
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
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For technical questions, contact:
diodestech@vishay.com
Document Number: 94341
Revision: 14-Jul-09
20ETS..PbF, 20ATS..PbF High Voltage Series
Input Rectifier Diode, 20 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
20
1
1
2
E
2
-
-
T
3
S
4
12
5
-
6
Current rating (20 = 20 A)
Circuit configuration:
E = TO-220AC
A = TO-220AB
3
4
-
-
Package:
T = TO-220
Type of silicon:
S = Standard recovery rectifier
08 = 800 V
12 = 1200 V
5
6
-
-
Voltage code x 100 = V
RRM
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95180
www.vishay.com/doc?95181
Document Number: 94341
Revision: 14-Jul-09
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
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