AP0903GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Good Thermal Dissipation
▼
Low On-resistance
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
9mΩ
16A
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
S
The PMPAK 3x3 package is special for DC-DC converters application
and low 1.0mm profile with backside heat sink.
®
D
D
D
S
S
G
PMPAK 3x3
®
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
3
Rating
30
+20
16
13
40
3.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
35
Units
℃/W
1
201009214
Data & specifications subject to change without notice
AP0903GYT-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=8A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
o
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
24
-
-
-
8.7
1.7
5
10
7
24
8
635
215
125
1.8
Max. Units
-
9
16
3
-
10
250
+100
14
-
-
-
-
-
-
1010
-
-
-
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=10A
V
DS
=30V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=10A
V
DS
=15V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=6Ω,V
GS
=10V
R
D
=15Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
2
Test Conditions
I
S
=2.9A, V
GS
=0V
I
S
=10A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
27
20
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP0903GYT-HF
40
40
T
A
=25 C
o
I
D
, Drain Current (A)
30
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
A
=150
o
C
30
10V
7.0V
6.0V
5.0V
V
G
=4.0V
20
20
10
10
0
0.0
1.0
2.0
3.0
4.0
0
0.0
2.0
4.0
6.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
2.0
I
D
=8A
14
T
A
=25 C
1.6
o
I
D
=10A
V
G
=10V
R
DS(ON)
(m
Ω
)
Normalized R
DS(ON)
12
10
1.2
8
0.8
6
4
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
10
T
j
=150 C
8
o
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.2
I
S
(A)
6
4
0.8
2
0
0
0.2
0.4
0.6
0.8
1
1.2
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP0903GYT-HF
10
f=1.0MHz
1200
I
D
=10A
V
DS
=15V
V
GS
, Gate to Source Voltage (V)
8
1000
800
6
C (pF)
600
C
iss
4
400
2
200
C
oss
C
rss
1
5
9
13
17
21
25
29
0
0
4
8
12
16
20
0
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
100us
1ms
Normalized Thermal Response (R
thja
)
Operation in this area
limited by R
DS(ON)
0.2
0.1
0.1
I
D
(A)
0.05
1
10ms
100ms
0.02
0.01
P
DM
0.01
t
T
Single Pulse
0.1
1s
T
A
=25 C
Single Pulse
o
DC
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thia
=80
℃/W
0.01
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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