®
BZV47C5V1
/
200
2W ZENER DIODES
FEATURES
VOLTAGE RANGE : 5.1 V to 200 V
HERMETICALLY SEALED PLASTIC CASE :
F126 PACKAGE
HIGH SURGE CAPABILITY : 55 W (10 ms) .
DESCRIPTION
2 W silicon Zener diodes.
F126
ABSOLUTE RATINGS
(Tamb = 25°C)
Symbol
P
T
stg
T
j
T
L
Parameter
Value
T
amb
= 55°C
2
- 65 to + 175
175
230
Unit
W
°
C
°C
°C
Power dissipation on infinite heatsink
Storage temperature range
Maximum junction temperature
Maximum lead temperature for soldering during 10s at 5mm
from case
THERMAL RESISTANCES
Symbol
R
th
(j-l)
R
th
(j-a)
Parameter
Value
60
100
Unit
°C/W
°C/W
Junction to lead
Junction to ambient on printed circuit on recommended pad
layout
January 1998 Ed : 2
1/4
BZV47C5V1 / BZV47C200
ELECTRICAL CHARACTERISTIC
(Tamb = 25°C)
TYPES
V
ZT
@ I
ZT
min.
max.
(1)
(1)
V
BZV47C5V1
BZV47C5V6
BZV47C6V2
BZV47C7V5
BZV47C10
BZV47C12
BZV47C15
BZV47C18
BZV47C20
BZV47C22
BZV47C24
BZV47C27
BZV47C30
BZV47C36
BZV47C39
BZV47C47
BZV47C68
BZV47C100
BZV47C150
BZV47C200
4.8
5.2
5.8
7
9.4
11.4
13.8
16.8
18.8
20.8
22.8
25.1
28
34
37
44
64
94
138
188
V
5.4
6
6.6
7.9
10.6
12.7
15.6
19.1
21.2
23.3
25.6
28.9
32
38
41
50
72
106
156
212
r
ZK
/ I
ZK
max.
I
ZT
(1)
Ω
5
2
2
2
4
7
10
15
15
15
15
15
15
40
40
45
80
200
300
350
mA
100
100
100
100
50
50
50
25
25
25
25
25
25
10
10
10
10
5
5
5
10
-4
/°C
1
2.5
3.2
4.5
5.5
6.5
7
7.5
7.5
8
8
8.5
8.5
8.5
9
9
9
9
9.5
9.5
µA
5
5
5
5
5
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
V
1
1
1
2
7.6
9.1
11.4
13.7
15.2
16.7
18.2
20.5
22.8
27.4
29.6
35.7
51.7
76
114
152
∝V
Z
typ.
I
R
/ V
R
max.
V
R
IZM
T
amb
=55°C
(2)
mA
370
330
300
250
185
155
130
105
94
86
78
69
62
52
48
40
27
18
12.8
9.4
I
ZSM
(3)
A
7.8
7.1
6.4
5.4
4
3.3
2.7
2.2
2
1.8
1.7
1.5
1.3
1.1
1
0.85
0.59
0.4
0.27
0.20
Note 1 : Pulse test : tp
≤
50ms
Note 2 : On infinite heatsink : L = 10mm
Note 3 : rectangular waveform (tp = 10ms)
Forward voltage drop : VF
≤
1.2 V (Tamb = 25°C, I F = 500mA)
Fig. 1 :
Power dissipation versus ambient
temperature.
Fig. 2 :Thermal
resistance versus lead length.
2/4
®
BZV47C5V1 / BZV47C200
Fig. 3 :
Relative variation of thermal impedance
junction to ambient versus pulse duration (PC
board FR4, L
leads
= 10mm).
Fig. 4 :
Junction capacitance versus reverse
voltage applied (typical values).
Fig. 5 :
Peak forward current versus peak forward
voltage drop (typical values).
Fig. 6 :
Leakage current versus regulation volt-
age (typical values).
I
R
(µA)
1E+2
Tj = 150°C
V
R
= 0.75*V
ZT
1E+1
1E+0
1E-1
1E-2
V
ZT
(V)
1E-3
1
10
100
200
Fig. 7 :
Differential resistance versus regulation
voltage (typical values).
Fig. 8 :
Peak pulse power versus pulse duration
(rectangular waveform, maximum values).
®
3/4
BZV47C5V1 / BZV47C200
MARKING :
Logo, Date Code, Type Code, Cathode Band (for unidirectional types only).
ORDER CODE
BZV47C
5V1
Type
Nominal Voltage
PACKAGE MECHANICAL DATA
F126 (Plastic)
DIMENSIONS
REF.
Millimeters
Min.
A
B
∅C
∅D
L1
6.05
26
2.95
0.76
3.00
0.81
Inches
Typ. Max.
0.244
0.250
1.220
0.118
0.032
0.120
0.034
0.050
Typ. Max. Min.
6.20
6.35
31
3.05
0.86
1.27
0.238
1.024
0.116
0.030
Note1 : Thelead is notcontrolled within zoneL1.
Packaging
: standard packaging is in tape and reel.
Weight
= 0.40 g.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
©
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
4/4
®
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
