*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
PTD90 Series - 9 mm Multi-Ganged Potentiometer
Product Dimensions
SHAFT STYLE
"K"
L
±
0.5
(.020)
1.5
(.059)
A
18 TEETH
KNURL
How To Order
SHAFT STYLE
"F"
L
±
B
F
0.5
(.020)
PTD90 1 - 2 0 20 K - B 203
Model
• PTD90 =
No Switch
No. of Sections
• 1 = 1 Section
• 2 = 2 Sections
• 3 = 3 Sections
• 4 = 4 Sections
• 5 = 5 Sections
• 6 = 6 Sections
• 8 = 8 Sections
Pin Style
• 1 = PC Pins vertical/
down facing
and ±10 %
Total Resistance
Tolerance
•2=
6.5
±
0.3
(.256
±
.012)
B
1.0
(.039)
6.0 +0/-0.1
(.236 +0/-.004)
DIA.
30
°
9.5
±
0.3
(.374
±
.012)
6.0
(.236)
4.8
±
0.3
(.189
±
.012)
9.5
±
0.3
(.374
±
.012)
4.5
(.177)
4.5
(.177)
6.0 +0/-0.1
(.236 +0/-.004)
DIA.
60
°
4.8
±
0.3
(.189
±
.012)
6.5
±
0.3
(.256
±
.012)
0.8
(.031)
2.0
(.079)
0.8
(.031)
6.0
(.236)
3.5
(.138)
5.0
(.197)
0.8
(.031)
2.0
(.079)
0.8
(.031)
PC Pins vertical/
down facing
and ±20 %
Total Resistance
Tolerance
3.5
(.138)
5.0
(.197)
Center Detent Option
• 0 = No Detent
• 2 = Center Detent
Standard Shaft Length
• 15 = 15 mm
• 20 = 20 mm
• 25 = 25 mm
Shaft Styles
• K = Knurled Type Shaft (Metal)
18 Toothed Serration Type
• F = Flatted Metal Shaft
Resistance Taper (See Taper Charts)
Taper Series followed by Curve Number
Resistance Code (See Table)
Other shaft styles available.
SHAFT SHOWN IN CCW POSITION
SHAFT SHOWN IN CCW POSITION
L
B
A
15
(.591)
5
(.197)
6
(.236)
20
(.787)
7
(.276)
10
(.394)
25
(.984)
10
(.394)
12
(.472)
L
B
F
15
(.591)
5
(.197)
7
(.276)
20
(.787)
7
(.276)
12
(.472)
25
(.984)
10
(.394)
12
(.472)
DIMENSIONS:
MM
(INCHES)
Tapers
A Series Tapers
100
90
80
Terminal 1-2 Output Voltage
X 100 (%)
Terminal 1-3 Input Voltage
70
60
50
40
30
20
10
A6
A5
):
:
0A
A)
(3
(25
A4
A):
20
): A3
(
A
(15
A
A):
(10
A): A1
(05
B Series Tapers
100
(5B
): B
): B
5
4
(3B
): B
(2B
3
): B
2
(B
):
(1B
B
):
B
1
C Series Tapers
100
90
80
Terminal 1-2 Output Voltage
X 100 (%)
Terminal 1-3 Input Voltage
70
60
50
40
30
20
10
(3
(25 0C):
C
C
(20 ): C 6
5
(15 C):
C) C4
:
(1 C3
(05 0C):
C
C)
:C
1
90
80
Terminal 1-2 Output Voltage
X 100 (%)
Terminal 1-3 Input Voltage
70
60
50
40
30
20
10
0
10
20
30
40
50
60
70
80
90
100
(4B
0
10
20
30
40
50
60
70
80
90
100
0
10
20
30
40
50
60
70
80
90
100
Rotational Travel (%)
Rotational Travel (%)
Rotational Travel (%)
REV. 01/14
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
在全球半导体产业因景气不佳而纷传并购、整合之际,两大IT巨头三星、IBM日前却双双宣布,将强化半导体产业投资。 三星电子本周一宣布,已向韩国证券交易所提交一份申请文件,打算2008年投下10.5亿美元,用于升级内存芯片生产线、改进技术工艺,从而提高产能并降低成本。无独有偶。本周二IBM公司宣布,未来3年将投资10亿美元,用于扩充位于纽约州 East Fishkill 的半导体工厂,以消...[详细]