BZT52H series
Single Zener diodes in a SOD123F package
Rev. 01 — 22 December 2005
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD123F small and flat lead Surface Mounted Device
(SMD) plastic package.
1.2 Features
s
Total power dissipation:
≤
830 mW
s
Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
s
Small plastic package suitable for
surface mounted design
s
Low differential resistance
1.3 Applications
s
General regulation functions
1.4 Quick reference data
Table 1:
Symbol
V
F
P
tot
Quick reference data
Parameter
forward voltage
total power dissipation
Conditions
I
F
= 10 mA
T
amb
≤
25
°C
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
0.9
375
830
Unit
V
mW
mW
[1]
[2]
[3]
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Philips Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
2. Pinning information
Table 2:
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
sym001
1
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3:
Ordering information
Package
Name
BZT52H-C2V4 to
BZT52H-C75
[1]
[1]
Type number
Description
plastic surface mounted package; 2 leads
Version
SOD123F
-
The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4:
Marking codes
Marking
code
B3
B4
B5
B6
B7
B8
B9
BA
BB
BC
BD
BE
BF
Type number
BZT52H-C8V2
BZT52H-C9V1
BZT52H-C10
BZT52H-C11
BZT52H-C12
BZT52H-C13
BZT52H-C15
BZT52H-C16
BZT52H-C18
BZT52H-C20
BZT52H-C22
BZT52H-C24
BZT52H-C27
Marking
code
BG
BH
BJ
BK
BL
BM
BN
BP
BQ
BR
BS
BT
BU
Type number
BZT52H-C30
BZT52H-C33
BZT52H-C36
BZT52H-C39
BZT52H-C43
BZT52H-C47
BZT52H-C51
BZT52H-C56
BZT52H-C62
BZT52H-C68
BZT52H-C75
-
-
Marking
code
BV
BW
BX
BY
BZ
C1
C2
C3
C4
C5
C6
-
-
Type number
BZT52H-C2V4
BZT52H-C2V7
BZT52H-C3V0
BZT52H-C3V3
BZT52H-C3V6
BZT52H-C3V9
BZT52H-C4V3
BZT52H-C4V7
BZT52H-C5V1
BZT52H-C5V6
BZT52H-C6V2
BZT52H-C6V8
BZT52H-C7V5
9397 750 15082
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 December 2005
2 of 10
Philips Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
P
ZSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
Parameter
forward current
non-repetitive peak
reverse current
non-repetitive peak
reverse power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
[1]
Max
250
see
Table 8, 9
and
10
40
375
830
150
+150
+150
Unit
mA
-
-
-
-
−65
−65
W
mW
mW
°C
°C
°C
T
amb
≤
25
°C
[2]
[3]
t
p
= 100
µs;
square wave; T
j
= 25
°C
prior to surge
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 6:
Symbol
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
330
150
70
Unit
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
9397 750 15082
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 December 2005
3 of 10
Philips Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
7. Characteristics
Table 7:
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
[1]
Parameter
forward voltage
Conditions
I
F
= 10 mA
[1]
Min
-
Typ
-
Max
0.9
Unit
V
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
Table 8:
Characteristics per type; BZT52H-C2V4 to BZT52H-C24
T
j
= 25
°
C unless otherwise specified.
BZT52H
-Cxxx
Working
voltage
V
Z
(V);
I
Z
= 5 mA
Min
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
[1]
[2]
Maximum differential
resistance
r
dif
(Ω)
I
Z
= 1 mA
400
500
500
500
500
500
500
500
480
400
150
80
80
80
100
70
70
90
110
110
170
170
220
220
220
I
Z
= 5 mA
85
83
95
95
95
95
95
78
60
40
10
8
10
10
10
10
10
10
10
15
20
20
20
25
30
Reverse
current
I
R
(µA)
Max
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(V)
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Min
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−3.5
−2.7
−2.0
0.4
1.2
2.5
3.2
3.8
4.5
5.4
6.0
7.0
9.2
10.4
12.4
14.4
16.4
18.4
Max
0.0
0.0
0.0
0.0
0.0
0.0
0.0
0.2
1.2
2.5
3.7
4.5
5.3
6.2
7.0
8.0
9.0
10.0
11.0
13.0
14.0
16.0
18.0
20.0
22.0
Diode
capacitance
C
d
(pF)
[1]
Max
450
450
450
450
450
450
450
300
300
300
200
200
150
150
150
90
85
85
80
75
75
70
60
60
55
Non-repetitive peak
reverse current
I
ZSM
(A)
[2]
Max
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
Max
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
f = 1 MHz; V
R
= 0 V
t
p
= 100
µs;
T
amb
= 25
°C
9397 750 15082
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 December 2005
4 of 10
Philips Semiconductors
BZT52H series
Single Zener diodes in a SOD123F package
Table 9:
Characteristics per type; BZT52H-C27 to BZT52H-C51
T
j
= 25
°
C unless otherwise specified.
BZT52H
-Cxxx
Working
voltage
V
Z
(V);
I
Z
= 2 mA
Min
27
30
33
36
39
43
47
51
[1]
[2]
Maximum differential
resistance
r
dif
(Ω)
I
Z
= 1 mA
250
250
250
250
300
325
325
350
I
Z
= 5 mA
40
40
40
60
75
80
90
100
Reverse
current
I
R
(µA)
Max
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
R
(V)
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Min
21.4
24.4
27.4
30.4
33.4
37.6
42.0
46.6
Max
25.3
29.4
33.4
37.4
41.2
46.6
51.8
57.2
Diode
Non-repetitive peak
capacitance reverse current
C
d
(pF)
[1]
I
ZSM
(A)
[2]
Max
50
50
45
45
45
40
40
40
Max
1.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
Max
28.9
32.0
35.0
38.0
41.0
46.0
50.0
54.0
25.1
28.0
31.0
34.0
37.0
40.0
44.0
48.0
f = 1 MHz; V
R
= 0 V
t
p
= 100
µs;
T
amb
= 25
°C
Table 10: Characteristics per type; BZT52H-C56 to BZT52H-C75
T
j
= 25
°
C unless otherwise specified.
BZT52H
-Cxxx
Working
voltage
V
Z
(V);
I
Z
= 2 mA
Min
56
62
68
75
[1]
[2]
Maximum differential
resistance
r
dif
(Ω)
Reverse
current
I
R
(µA)
V
R
(V)
39.2
43.4
47.6
52.5
Temperature
coefficient
S
Z
(mV/K);
I
Z
= 5 mA
Min
52.2
58.8
65.6
73.4
Max
63.8
71.6
79.8
88.6
Diode
Non-repetitive peak
capacitance reverse current
C
d
(pF)
[1]
I
ZSM
(A)
[2]
Max
40
35
35
35
Max
0.3
0.3
0.25
0.20
Max
60.0
66.0
72.0
79.0
I
Z
= 0.5 mA I
Z
= 2 mA Max
375
400
400
400
120
140
160
175
0.05
0.05
0.05
0.05
52.0
58.0
64.0
70.0
f = 1 MHz; V
R
= 0 V
t
p
= 100
µs;
T
amb
= 25
°C
9397 750 15082
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 22 December 2005
5 of 10
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
