AP0103GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
S
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
B
VDSS
@T
j
=125
o
C
40V
2.99mΩ
220A
R
DS(ON)
I
D
Description
AP0103 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance and
low package cost contribute to the worldwide popular package.
G
D
S
TO-220(P)
Absolute Maximum Ratings
Symbol
o
V
DS
@T
j
=125 C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
3
3
Rating
40
+20
220
80
80
320
250
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
℃
℃
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
0.5
62
Units
℃/W
℃/W
1
201304121
Data and specifications subject to change without notice
AP0103GP-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
o
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=40A
V
GS
=4.5V, I
D
=30A
Min.
38
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
108
-
-
30
2.3
20
10
80
40
85
605
210
1.4
Max. Units
-
2.99
4.2
3
-
25
+100
48
-
-
-
-
-
-
-
-
2.8
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=40A
V
DS
=32V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=32V
V
GS
=4.5V
V
DS
=20V
I
D
=40A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
2760 4410
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=40A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
32
24
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP0103GP-HF
300
200
T
C
=25 C
250
o
I
D
, Drain Current (A)
200
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
C
=150 C
160
o
10V
7.0V
6.0V
5.0V
V
G
=4.0V
120
150
80
100
40
50
0
0
1
2
3
4
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
4
2.0
I
D
= 30A
T
C
= 25
o
C
3.6
I
D
=40A
V
G
=10V
Normalized R
DS(ON)
1.6
R
DS(ON)
(m
Ω
)
3.2
1.2
2.8
0.8
2.4
2
3
4
5
6
7
8
9
10
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
40
I
D
=250uA
1.6
30
Normalized V
GS(th)
I
S
(A)
o
T
j
=150 C
20
1.2
T
j
=25 C
o
0.8
10
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP0103GP-HF
f=1.0MHz
10
4000
I
D
=40A
V
DS
=32V
8
3500
V
GS
, Gate to Source Voltage (V)
3000
C
iss
2500
C (pF)
6
2000
4
1500
1000
2
500
C
oss
C
rss
1
5
9
13
17
21
25
29
0
0
10
20
30
40
50
0
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
Operation in this
area limited by
R
DS(ON)
100
100us
Normalized Thermal Response (R
thjc
)
0.2
I
D
(A)
0.1
1ms
10ms
10
0.1
0.05
P
DM
t
0.02
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
C
=25
o
C
Single Pulse
1
0.1
1
10
100ms
DC
0.01
Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
240
200
V
DS
=5V
200
160
I
D
, Drain Current (A)
160
I
D
, Drain Current (A)
120
120
Limited by package
80
80
40
40
T
j
=150
o
C
T
j
=25
o
C
T
j
=-40 C
o
0
25
50
75
100
125
150
0
0
1
2
3
4
5
6
T
C
, Case Temperature (
o
C)
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Fig 12. Transfer Characteristics
4
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
