AP0103GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
SO-8 Compatible with Heatsink
▼
Low On-resistance
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
B
VDSS
@T
j
=125
o
C
40V
2.55mΩ
140A
D
R
DS(ON)
I
D
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
□
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
®
D
D
D
S
S
S
G
PMPAK
®
5x6
Absolute Maximum Ratings
Symbol
o
V
DS
@T
j
=125 C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip), V
GS
@ 10V
Continuous Drain Current , V
GS
@ 10V
Continuous Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
3
Rating
40
+20
140
34.6
27.7
200
83.3
5
28.8
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
W
mJ
℃
℃
V
GS
I
D
@T
C
=25℃
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
E
AS
T
STG
T
J
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
3
Value
1.5
25
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
201105031
AP0103GMT-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=20A
V
DS
=24V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
I
D
=20A
V
DS
=20V
V
GS
=4.5V
V
DS
=20V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
f=1.0MHz
Min.
38
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
2.2
2.9
1.6
80
-
-
23
6
11.5
12
7
40
35
780
230
1.7
Max. Units
-
2.55
3.6
3
-
10
+100
37
-
-
-
-
-
-
-
-
3.4
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
2800 4480
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=20A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
40
45
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature
2.Pulse test
2
o
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec, 60 C/W at steady state.
o
4.Starting T
j
=25 C , V
DD
=25V , L=0.1mH , R
G
=25Ω , I
AS
=24A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP0103GMT-HF
200
200
T
C
=25 C
160
o
I
D
, Drain Current (A)
120
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
V
G
= 4.0 V
T
C
=150 C
160
o
10V
7.0V
6.0V
5.0V
V
G
=4.0V
120
80
80
40
40
0
0.0
1.0
2.0
3.0
4.0
5.0
0
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.6
2.0
I
D
=20A
T
C
=25 C
Normalized R
DS(ON)
3.2
1.6
o
I
D
=20A
V
G
=10V
R
DS(ON)
(m
Ω
)
2.8
1.2
2.4
0.8
2
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
I
D
=250uA
o
T
j
=150 C
30
T
j
=25 C
Normalized V
GS(th)
(V)
1.2
o
I
S
(A)
20
0.8
10
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP0103GMT-HF
10
4000
f=1.0MHz
I
D
=20A
V
DS
=20V
V
GS
, Gate to Source Voltage (V)
8
3000
C
iss
6
C (pF)
2000
4
1000
2
C
oss
C
rss
1
5
9
13
17
21
25
29
0
0
10
20
30
40
50
0
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Duty factor = 0.5
100
Operation in this area
limited by R
DS(ON)
Normalized Thermal Response (R
thjc
)
100us
0.2
I
D
(A)
0.1
0.1
1ms
10
0.05
P
DM
t
T
0.02
0.01
T
C
=25 C
Single Pulse
1
0.01
0.1
1
10
o
10ms
100ms
DC
Duty factor = t/T
Peak T
j
= PDM x R
thjc
+ T
c
Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
V
DS
=5V
160
V
G
Q
G
I
D
, Drain Current (A)
120
4.5V
Q
GS
Q
GD
80
40
T
j
=150
o
C
T
j
=25
o
C
o
T
j
=-40 C
Charge
5
6
Q
0
0
1
2
3
4
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
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