A Product Line of
Diodes Incorporated
PAM8603M
3W FILTERLESS STEREO CLASS-D AUDIO AMPLIFIER WITH DC VOLUME CONTROL
Description
The PAM8603M is a 3W, sterero, Class-D audio amplifier with DC
volume control. It offers low THD+N, allowing it to produce high-
quality sound reproduction. The new filterless architecture allows the
device to drive the speaker directly, requiring no low-pass output
filters, which saves the system cost and PCB area.
With the same numbers of external components, the efficiency of the
PAM8603M is much better than class-AB cousins. It can extend the
battery life thus ideal for portable applications.
The PAM8603M is available in SSOP-24 and SOP-18 packages.
Pin Assignments
Features
3W Output at 10% THD with a 4Ω Load and 5V Power Supply
Filterless, Low Quiescent Current and Low EMI
Low THD+N
64-Step DC Volume Control from -75dB to +24dB
Superior Low Noise
Efficiency up to 89%
Short Circuit Protection
Thermal Shutdown
Few External Components to Save the Space and Cost
Pb-Free Package
Applications
LCD Monitors/TV Projectors
Notebook Computers
Portable Speakers
Portable DVD Players, Game Machines
Cellular Phones/Speaker Phones
PAM8603M
Document number: DSxxxxx Rev. 1 - 1
1 of 14
www.diodes.com
November 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8603M
Typical Applications Circuit
Pin Descriptions
Pin
Name
+OUTL
PGNDL
-OUTL
PVDDL
MUTE
VDD
INL
NC
VDC
VOLUME
VREF
INR
GND
SHDN
PVDDR
-OUTR
PGNDR
+OUTR
Package Name
SSOP-24
SOP-18
1
1
2, 3
2
4
3
5
4
6
5
7
6
8
7
9, 12, 13, 15, 16
8
10
9
11
10
14
11
17
12
18
13
19
14
20
15
21
16
22, 23
17
24
18
Function
Left Channel Positive Output
Left Channel Power GND
Left Channel Negative Output
Left Channel Power Supply
Mute Control Input (active low)
Analog Power Supply
Left Channel Input
No Connection
Analog reference for gain control section.
DC volume control to set the gain of Class-D.
Internal analog reference, connect a bypass capacitor from VREF to GND.
Right Channel Input
Analog Ground
Shutdown Control Input (active low)
Right Channel Power Supply
Right Channel Negative Output
Right Channel Power GND
Right Channel Positive Output
PAM8603M
Document number: DSxxxxx Rev. 1 - 1
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November 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8603M
Functional Block Diagram
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter
Supply Voltage
Input Voltage
Maximum Junction Temperature
Storage Temperature
Soldering Temperature
Rating
6.0
-0.3 to V
DD
+0.3
150
-65 to +150
300, 5sec
Unit
V
°C
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Parameter
Supply Voltage Range
Ambient Temperature Range
Junction Temperature Range
Rating
2.8 to 5.5
-40 to +85
-40 to +125
Unit
V
°C
°C
Thermal Information
Parameter
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Package
SSOP-24
SOP-18
SSOP-24
SOP-18
Symbol
θ
JA
θ
JC
Max
96
70
18
16
Unit
°C/W
PAM8603M
Document number: DSxxxxx Rev. 1 - 1
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November 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8603M
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, Gain = 20dB, unless otherwise specified.)
Symbol
V
DD
Parameter
Supply Power
THD+N = 10%, f = 1kHz, R
L
= 4Ω
THD+N = 1%, f = 1kHz, R
L
= 4Ω
P
O
Output Power
THD+N = 10%, f = 1kHz, R
L
= 8Ω
THD+N = 1%, f = 1kHz, R
L
= 8Ω
V
DD
= 5.0V, Po = 0.5W, R
L
= 8Ω
THD+N
Total Harmonic Distortion Plus
Noise
V
DD
= 3.6V, Po = 0.5W, R
L
= 8Ω
V
DD
= 5.0V, Po = 1W, R
L
= 4Ω
V
DD
= 3.6V, Po = 1W, R
L
= 4Ω
PSRR
C
S
SNR
V
N
Dyn
η
I
Q
I
MUTE
I
SD
R
DS(ON)
fsw
V
OS
VIH
VIL
OTP
OTH
Power Supply Ripple Rejection
Crosstalk
Signal-to-Noise
Output Noise
Dynamic Range
Efficiency
Quiescent Current
Muting Current
Shutdown Current
Static Drain-to-Source On-State
Resistor
Switching Frequency
Output Offset Voltage
SD/MUTE Input High
SD/MUTE Input Low
Over Temperature Protection
Over Temperature Hysterisis
V
DD
= 5.0V, Inputs AC-Grounded
V
DD
= 5.0V, Po = 0.5W, R
L
= 8Ω, f = 1kHz
V
DD
= 5V, V
O_RMS
= 1V, f = 1kHz
V
DD
= 5V, Inputs AC-Grounded with
C
IN
= 0.47μF
V
DD
= 5V, THD = 1%, f = 1kHz
R
L
= 8Ω, THD = 10%
R
L
= 4Ω, THD = 10%
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 5.0V, V
MUTE
= 0.3V
V
DD
= 2.5V to 5.5V, V
SD
= 0.3V
I
DS
= 500mA,V
GS
= 5V
V
DD
= 3V to 5V
V
IN
= 0V, V
DD
= 5V
V
DD
= 5V
V
DD
= 5V
No Load, Junction Temperature, V
DD
= 5V
PMOS
NMOS
200
240
180
260
10
1.45
0.65
135
30
f = 1kHz
No load
A-weighting
No A-weighting
90
85
80
85
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 5.0V
V
DD
= 3.6V
f = 1kHz
f = 1kHz
f = 100Hz
f = 1kHz
Test Conditions
Min
2.8
2.85
1.55
2.35
1.25
1.55
0.75
1.15
0.5
3.2
1.8
2.6
1.5
1.8
0.9
1.4
0.72
0.15
0.11
0.15
0.11
-59
-58
-58
-95
98
120
102
89
85
13.5
8.5
2.7
20
15
5
1
500
350
300
50
-80
150
300
0.3
0.25
0.3
0.25
-50
-50
Typ
Max
5.5
Units
V
W
W
W
W
%
%
dB
dB
dB
µV
dB
%
mA
mA
µA
mΩ
kHz
mV
V
°C
PAM8603M
Document number: DSxxxxx Rev. 1 - 1
4 of 14
www.diodes.com
November 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8603M
Typical Performance Characteristics
(@T
A
= +25°C, unless otherwise specified.)
PAM8603M
Document number: DSxxxxx Rev. 1 - 1
5 of 14
www.diodes.com
November 2012
© Diodes Incorporated
Microchip MCU
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