74AHC3G04; 74AHCT3G04
Inverter
Rev. 3 — 26 March 2013
Product data sheet
1. General description
The 74AHC3G04; 74AHCT3G04 are high-speed Si-gate CMOS devices. They provide
three inverting buffers.
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.
2. Features and benefits
Symmetrical output impedance
High noise immunity
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101C exceeds 1000 V
Low power dissipation
Balanced propagation delays
Multiple package options
Specified from
40 C
to +85
C
and from
40 C
to +125
C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74AHC3G04DP
74AHCT3G04DP
74AHC3G04DC
74AHCT3G04DC
74AHC3G04GD
74AHCT3G04GD
40 C
to +125
C
XSON8
40 C
to +125
C
VSSOP8
40 C
to +125
C
Name
TSSOP8
Description
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
Version
SOT505-2
Type number
plastic very thin shrink small outline package; 8 leads; SOT765-1
body width 2.3 mm
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; body 3
2
0.5 mm
NXP Semiconductors
74AHC3G04; 74AHCT3G04
Inverter
4. Marking
Table 2.
Marking codes
Marking code
[1]
A04
C04
A04
C04
A04
C04
Type number
74AHC3G04DP
74AHCT3G04DP
74AHC3G04DC
74AHCT3G04DC
74AHC3G04GD
74AHCT3G04GD
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
1
1
7
1
1A
1Y
7
3
1
5
3
2A
2Y
5
1
6
3A
3Y
2
6
2
A
Y
mna110
mna720
mna721
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram (one gate)
6. Pinning information
6.1 Pinning
74AHC3G04
74AHCT3G04
1A
1
2
3
4
8
7
6
5
V
CC
1Y
3A
2Y
74AHC3G04
74AHCT3G04
1A
3Y
2A
GND
1
2
3
4
001aaj514
3Y
8
7
6
5
V
CC
1Y
3A
2Y
2A
GND
001aaj515
Transparent top view
Fig 4.
Pin configuration SOT505-2 (TSSOP8) and
SOT765-1 (VSSOP8)
Fig 5.
Pin configuration SOT996-2 (XSON8)
74AHC_AHCT3G04
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 March 2013
2 of 14
NXP Semiconductors
74AHC3G04; 74AHCT3G04
Inverter
6.2 Pin description
Table 3.
Symbol
1A, 2A, 3A
GND
1Y, 2Y, 3Y
V
CC
Pin description
Pin
1, 3, 6
4
7, 5, 2
8
Description
data input
ground (0 V)
data output
supply voltage
7. Functional description
Table 4.
Input nA
L
H
[1]
H = HIGH voltage level; L = LOW voltage level
Function table
[1]
Output nY
H
L
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
V
I
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
Min
0.5
0.5
Max
+7.0
+7.0
-
20
25
75
-
+150
250
Unit
V
V
mA
mA
mA
mA
mA
C
mW
V
I
<
0.5
V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
0.5
V < V
O
< V
CC
+ 0.5 V
[1]
[1]
20
-
-
-
75
65
T
amb
=
40 C
to +125
C
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP8 package: above 55
C
the value of P
tot
derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110
C
the value of P
tot
derates linearly with 8 mW/K.
For XSON8 package: above 45
C
the value of P
tot
derates linearly with 2.4 mW/K.
74AHC_AHCT3G04
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 March 2013
3 of 14
NXP Semiconductors
74AHC3G04; 74AHCT3G04
Inverter
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 3.3 V
0.3 V
V
CC
= 5.0 V
0.5 V
Conditions
Min
2.0
0
0
40
-
-
74AHC3G04
Typ
5.0
-
-
+25
-
-
Max
5.5
5.5
V
CC
+125
100
20
4.5
0
0
40
-
-
74AHCT3G04
Min
Typ
5.0
-
-
+25
-
-
Max
5.5
5.5
V
CC
+125
-
20
V
V
V
C
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74AHC3G04
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 5.5 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 5.5 V
V
OH
HIGH-level
V
I
= V
IH
or V
IL
output voltage
I
O
=
50 A;
V
CC
= 2.0 V
I
O
=
50 A;
V
CC
= 3.0 V
I
O
=
50 A;
V
CC
= 4.5 V
I
O
=
4.0
mA; V
CC
= 3.0 V
I
O
=
8.0
mA; V
CC
= 4.5 V
V
OL
LOW-level
V
I
= V
IH
or V
IL
output voltage
I
O
= 50
A;
V
CC
= 2.0 V
I
O
= 50
A;
V
CC
= 3.0 V
I
O
= 50
A;
V
CC
= 4.5 V
I
O
= 4.0 mA; V
CC
= 3.0 V
I
O
= 8.0 mA; V
CC
= 4.5 V
I
I
I
CC
C
I
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
1.5
2.1
3.85
-
-
-
1.9
2.9
4.4
2.58
3.94
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.0
3.0
4.5
-
-
0
0
0
-
-
-
-
1.5
-
-
-
0.5
0.9
1.65
-
-
-
-
-
0.1
0.1
0.1
0.36
0.36
0.1
1.0
10
1.5
2.1
3.85
-
-
-
1.9
2.9
4.4
2.48
3.8
-
-
-
-
-
-
-
-
-
-
-
0.5
0.9
1.65
-
-
-
-
-
0.1
0.1
0.1
0.44
0.44
1.0
10
10
1.5
2.1
3.85
-
-
-
1.9
2.9
4.4
2.40
3.70
-
-
-
-
-
-
-
-
-
-
-
0.5
0.9
1.65
-
-
-
-
-
0.1
0.1
0.1
0.55
0.55
2.0
40
10
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A
A
pF
Conditions
Min
25
C
Typ
Max
40 C
to +85
C 40 C
to +125
C
Unit
Min
Max
Min
Max
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
input
capacitance
74AHC_AHCT3G04
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 March 2013
4 of 14
NXP Semiconductors
74AHC3G04; 74AHCT3G04
Inverter
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74AHCT3G04
V
IH
V
IL
V
OH
HIGH-level
input voltage
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
2.0
-
-
-
-
0.8
2.0
-
-
0.8
2.0
-
-
0.8
V
V
Conditions
Min
25
C
Typ
Max
40 C
to +85
C 40 C
to +125
C
Unit
Min
Max
Min
Max
HIGH-level
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
output voltage
I
O
=
50 A
I
O
=
8.0
mA
LOW-level
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
output voltage
I
O
= 50
A
I
O
= 8.0 mA
input leakage
current
V
I
= 5.5 V or GND;
V
CC
= 0 V to 5.5 V
4.4
3.94
-
-
-
-
-
4.5
-
0
-
-
-
-
-
-
0.1
0.36
0.1
1.0
1.35
4.4
3.8
-
-
-
-
-
-
-
0.1
0.44
1.0
10
1.5
4.4
3.70
-
-
-
-
-
-
-
0.1
0.55
2.0
40
1.5
V
V
V
V
A
A
mA
V
OL
I
I
I
CC
I
CC
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
additional
per input pin; V
I
= 3.4 V;
supply current other inputs at V
CC
or GND;
I
O
= 0 A; V
CC
= 5.5 V
input
capacitance
C
I
-
1.5
10
-
10
-
10
pF
11. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; for test circuit see
Figure 7.
Symbol Parameter
74AHC3G04
t
pd
propagation
delay
nA to nY; see
Figure 6
V
CC
= 3.0 V to 3.6 V
C
L
= 15 pF
C
L
= 50 pF
V
CC
= 4.5 V to 5.5 V
C
L
= 15 pF
C
L
= 50 pF
C
PD
power
dissipation
capacitance
per buffer;
C
L
= 50 pF; f
i
= 1 MHz;
V
I
= GND to V
CC
[4]
[3]
[1]
[2]
Conditions
Min
25
C
Typ
Max
40 C
to +85
C
Min
Max
40 C
to +125
C
Unit
Min
Max
-
-
-
-
-
4.3
6.1
3.1
4.5
9
7.1
10.6
5.5
7.5
-
1.0
1.0
1.0
1.0
-
8.5
12.0
6.5
8.5
-
1.0
1.0
1.0
1.0
-
11.0
14.5
7.0
9.5
-
ns
ns
ns
ns
pF
74AHC_AHCT3G04
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 3 — 26 March 2013
5 of 14
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