BZT52-C2V4 THRU BZT52-C75
ZENER DIODES
FEATURES
SOD-123
.022 (0.55)
♦
Silicon Planar Power Zener Diodes
♦
The Zener voltages are graded according to the international
E 24 standard. Standard Zener voltage tolerance
is ±5%. Replace suffix “C” with “B” for ±2% toler-
ance. Other tolerances and other Zener voltages
are available upon request.
♦
These diodes are also available in other case styles and other
configurations including: the SOT-23 case with type designation
BZX84 series, the dual zener diode common anode configuration
in the SOT-23 case with type designation AZ23 series and the
dual zener diode common cathode configuration in the SOT-23
case with type designation DZ23 series.
Cathode Mark
.152 (3.85)
.140 (3.55)
.112 (2.85)
.100 (2.55)
Top View
max. .004 (0.1)
max. .053 (1.35)
min. .010 (0.25)
max. .006 (0.15)
.067 (1.70)
.055 (1.40)
MECHANICAL DATA
Dimensions are in inches and (millimeters)
Case:
SOD-123 Plastic Case
Weight:
approx. 0.01 g
MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNIT
Zener Current (see Table “Characteristics”)
Power Dissipation at Tamb = 25°C
Junction Temperature
Storage Temperature Range
P
tot
T
j
T
S
410
(1)
150
– 65 to +150
mW
°C
°C
SYMBOL
MIN.
TYP.
MAX.
UNIT
Thermal Resistance
Junction to Ambient Air
R
ΘJA
–
–
300
(2)
°C/W
NOTES:
(1) Diode on Ceramic Substrate 0.7mm; 2.5mm
2
area
(2) Valid provided that electrodes are kept at ambient temperature
12/10/98
BZT52-C2V4 THRU BZT52-C75
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Dynamic Resistance
Zener Voltage
(1)
at
I
Z
= 5 mA
Type
BZT52-C2V4
BZT52-C2V7
BZT52-C3
BZT52-C3V3
BZT52-C3V6
BZT52-C3V9
BZT52-C4V3
BZT52-C4V7
BZT52-C5V1
BZT52-C5V6
BZT52-C6V2
BZT52-C6V8
BZT52-C7V5
BZT52-C8V2
BZT52-C9V1
BZT52-C10
BZT52-C11
BZT52-C12
BZT52-C13
BZT52-C15
BZT52-C16
BZT52-C18
BZT52-C20
BZT52-C22
BZT52-C24
BZT52-C27
BZT52-C30
BZT52-C33
BZT52-C36
BZT52-C39
BZT52-C43
BZT52-C47
BZT52-C51
BZT52-C56
BZT52-C62
BZT52-C68
BZT52-C75
V
Z
V
2.28 … 2.56
2.5 … 2.9
2.8 … 3.2
3.1 … 3.5
3.4 … 3.8
3.7 … 4.1
4.0 … 4.6
4.4 … 5.0
4.8 … 5.4
5.2 … 6.0
5.8 … 6.6
6.4
at
I
Z
= 5 mA
f = 1 kHz
r
Zj
Ω
85
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 135
< 200
(2)
at
I
Z
= 1 mA
f = 1 kHz
r
Zj
Ω
600
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
< 1000
< 1000
(3)
Temp. Coeff.
of Zener Voltage
at
I
Z
= 5 mA
α
VZ
10
–4
/
K
typ. –1.8
–9…–4
–9… –3
–8… –3
–8… –3
–7… –3
–6… –1
– 5 … +2
– 3 … +4
– 2 … +6
– 1 … +7
+2 … +7
+3 … +7
+4 … +7
+5 … +8
+5 … +8
+5 … +9
+6 … +9
+7 … +9
+7 … +9
+8 … +9.5
+8 … +9.5
+8 … +10
+8 … +10
+8 … +10
+8 … +10
+8 … +10
+8 … +10
+8 … +10
+10 … +12
+10 … +12
+10 … +12
+10 … +12
typ. +10
typ. +10
(2)
Reverse
Voltage
at
I
R
= 100 nA
V
R
V
–
–
–
–
–
–
–
–
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
–
–
–
–
Admissable Zener current
(4)
at
T
amb
= 45°C
I
Z
mA
–
113
98
92
85
77
71
64
56
50
45
41
37
34
30
28
25
23
21
19
17
15
14
13
11
10
9
8
8
7
6
5
5
–
–
–
–
at
T
amb
= 25°C
I
Z
mA
–
134
118
109
100
92
84
76
67
59
54
49
44
40
36
33
30
28
25
23
20
18
17
16
13
12
10
9
9
8
7
6
6
–
–
–
–
…
7.2
7.0 … 7.9
7.7 … 8.7
8.5 … 9.6
9.4 … 10.6
10.4 … 11.6
11.4 … 12.7
12.4 … 14.1
13.8 … 15.6
15.3 … 17.1
16.8 …19.1
18.8 … 21.2
20.8 … 23.3
22.8 … 25.6
25.1 … 28.9
28 … 32
31 … 35
34 … 38
37 … 41
40 … 46
44 … 50
48 … 54
52.0 … 60.0
64.0 … 72.0
(2)
58.0 … 66.0
(2)
(2)
< 150
(2)
(2)
< 1000
(3)
(3)
typ. +10
(2)
(2)
70.0 … 79.0
(2)
< 250
(2)
< 1500
(3)
typ. +10
(2)
NOTES:
(1) Tested with pulses t
p
= 5 ms
(2) at I
Z
= 2.5 mA
(3) at I
Z
= 0.5 mA
(4) Valid provided that electrodes are kept at ambient temperature
FPGA/CPLD
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