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RS1G

产品描述SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小15KB,共1页
制造商SSE
官网地址http://www.sse-diode.com/
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RS1G概述

SIGNAL DIODE

RS1G规格参数

参数名称属性值
状态ACTIVE
二极管类型信号二极管

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SHANGHAI SUNRISE ELECTRONICS CO., LTD.
RS1A THRU RS1M
SURFACE MOUNT FAST
SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
FEATURES
• Ideal for surface mount pick and
place application
• Low profile package
• Built-in strain relief
• High surge capability
• Glass passivated chip
• Fast recovery for high efficiency
• High temperature soldering guaranteed:
260
o
C/10sec/at terminal
TECHNICAL
SPECIFICATION
SMA/DO-214AC
B
A
C
D
F
G
MAX.
MIN.
MAX.
MIN.
A
.110(2.79)
.100(2.54)
E
.208(5.28)
.194(4.93)
B
.177(4.50)
.157(3.99)
F
.090(2.29)
.078(1.98)
H
C
D
.058(1.47) .012(0.305)
.052(1.32) .006(0.152)
G
H
.008(0.203) .060(1.52)
.004(0.102) .030(0.76)
MECHANICAL DATA
• Terminal: Plated leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25 C, unless otherwise stated,for capacitive load,
derate current by 20%)
RATINGS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
o
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
RS
1A
50
35
50
RS
1B
100
70
100
RS
1D
200
140
200
RS
1G
400
280
400
1.0
30
1.3
5.0
200
RS
1J
600
420
600
RS RS
UNITS
1K 1M
800 1000
V
560 700
V
800 1000
V
A
A
V
µA
µA
nS
pF
o
(T
L
=110 C)
Peak Forward Surge Current (8.3ms single
I
FSM
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
V
F
(at rated forward current)
Maximum DC Reverse Current
T
a
=25
o
C
I
R
o
(at rated DC blocking voltage)
T
a
=125 C
(Note 1)
trr
Maximum Reverse Recovery Time
C
J
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance
(Note 3)
150
15
30
250
500
R
θ
(ja)
-50 to +150
T
STG
,T
J
Storage and Operation Junction Temperature
Note:
1.Reverse recovery condition I
F
=0.5A, I
R
=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0V
dc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
C/W
o
C
http://www.sse-diode.com

RS1G相似产品对比

RS1G RS1M RS1K RS1J RS1D RS1B RS1A
描述 SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC SIGNAL DIODE 0.7 A, SILICON, SIGNAL DIODE
状态 ACTIVE TRANSFERRED ACTIVE ACTIVE - ACTIVE ACTIVE
二极管类型 信号二极管 信号二极管 SIGNAL DIODE 信号二极管 - SIGNAL DIODE SIGNAL DIODE

 
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