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RS1GB

产品描述1 A, 400 V, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小44KB,共2页
制造商Diodes
官网地址http://www.diodes.com/
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RS1GB概述

1 A, 400 V, SILICON, SIGNAL DIODE

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RS1A/B - RS1M/B
1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current
Capability
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
B
SMA
Dim
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
SMB
Min
3.30
4.06
1.96
0.15
5.00
0.10
0.76
2.00
Max
3.94
4.57
2.21
0.31
5.59
0.20
1.52
2.62
A
C
A
B
C
D
E
G
Mechanical Data
·
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
SMA Weight: 0.064 grams (approx.)
SMB Weight: 0.093 grams (approx.)
Mounting Position: Any
Marking: Type Number
J
D
H
G
E
H
J
A, B, D, G, J, K, M Suffix Designates SMA Package
AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 120°C
Non-Repetitive Peak Forward Surge Current,
8.3ms single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 3)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance, Junction to Terminal (Note 1)
Operating and Storage Temperature Range
@ I
F
= 1.0A
@ T
A
= 25°C
@ T
A
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
j
R
qJT
T
j,
T
STG
RS1
A/AB
50
35
@ T
A
= 25°C unless otherwise specified
RS1
B/BB
100
70
RS1
D/DB
200
140
RS1
G/GB
400
280
1.0
30
1.3
5.0
200
RS1
J/JB
600
420
RS1
K/KB
800
560
RS1
M/MB
1000
700
Unit
V
V
A
A
V
µA
150
15
20
-65 to +150
250
500
ns
pF
K/W
°C
Notes:
1. Valid provided that terminals are kept at ambient temperature.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Reverse Recovery Test Conditions: I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
DS15002 Rev. G-2
1 of 2
RS1A/B - RS1M/B

RS1GB相似产品对比

RS1GB RS1KB RS1K RS1JB RS1J RS1G RS1DB RS1D RS1BB RS1B
描述 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE SIGNAL DIODE SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 100 V, SILICON, SIGNAL DIODE SIGNAL DIODE

 
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