74LVC2G06
DUAL INVERTERS with OPEN DRAIN OUTPUTS
Description
The 74LVC2G06 is a dual inverter gate with open drain outputs. The
device is designed for operation with a power supply range of 1.65V
to 5.5V. The input is tolerant to 5.5V allowing this device to be used
in a mixed voltage environment. The device is fully specified for
partial power down applications using I
OFF
. The I
OFF
circuitry disables
the output preventing damaging current backflow when the device is
powered down. The open-drain output can be connected to other
open drain outputs to implement active-low wired-OR or active-high
wired-AND functions. The maximum sink current is 32mA.
Pin Assignments
Features
Wide Supply Voltage Range from 1.65V to 5.5V
-24mA Output Drive at 3.0V
CMOS Low Power Consumption
IOFF Supports Partial-Power-Down Mode Operation
Inputs accept up to 5.5V
ESD Protection Tested per JESD 22
Exceeds 200-V Machine Model (A115)
Exceeds 2000-V Human Body Model (A114)
Exceeds 1000-V Charged Device Model (C101)
Applications
Voltage Level Shifting
General Purpose Logic
Power Down Signal Isolation
Wide array of products such as:
PCs, networking, notebooks, netbooks, tablets
Computer peripherals, hard drives, CD/DVD ROM
TV, DVD, DVR, set top box
Cell Phones, Personal Navigation / GPS
MP3 players ,Cameras, Video Recorders
Latch-Up Exceeds 100mA per JESD 78, Class I
DFN1409 package designed as a direct replacement for chip
scale packaging.
Range of Package Options SOT26, SOT353, DFN1010,
DFN1409 and DFN1410
Leadless packages per JESD30E
DFN1410 denoted as X2-DFN1410-6
DFN1409 denoted as X2-DFN1409-6
DFN1010 denoted as X2-DFN1010-6
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Click here for ordering information, located at the end of datasheet
74LVC2G06
Document number: DS35161 Rev. 5 - 2
1 of 11
www.diodes.com
October 2013
© Diodes Incorporated
74LVC2G06
Pin Descriptions
Pin Name
1A
GND
2A
2Y
V
CC
1Y
Pin NO.
1
2
3
4
5
6
Function
Data Input
Ground
Data Input
Data Output Open Drain
Supply Voltage
Data Output Open Drain
Logic Diagram
1A
1
6
1Y
2A
3
4
2Y
Function Table
Inputs
A
H
L
Output
Y
L
Z
Absolute Maximum Ratings
(Note 4) (@T
A
= +25°C, unless otherwise specified.)
Symbol
ESD HBM
ESD CDM
ESD MM
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
T
J
T
STG
Note:
Description
Human Body Model ESD Protection
Charged Device Model ESD Protection
Machine Model ESD Protection
Supply Voltage Range
Input Voltage Range
Voltage applied to output in high impedance or I
OFF
state
Voltage applied to output in high or low state
Input Clamp Current V
I
< 0
Output Clamp Current V
O
< 0
Continuous Output Current
Continuous Current Through V
DD
or GND
Operating Junction Temperature
Storage Temperature
Rating
2
1
200
-0.5 to +6.5
-0.5 to +6.5
-0.5 to +6.5
-0.3 to V
CC
+0.5
-50
-50
-50
±100
-40 to +150
-65 to +150
Unit
kV
kV
V
V
V
V
V
mA
mA
mA
mA
°C
°C
4. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should be
within recommend values.
74LVC2G06
Document number: DS35161 Rev. 5 - 2
2 of 11
www.diodes.com
October 2013
© Diodes Incorporated
74LVC2G06
Recommended Operating Conditions
(Note 5) (@T
A
= +25°C, unless otherwise specified.)
Symbol
V
CC
Operating Voltage
Parameter
Operating
Data retention only
V
CC
= 1.65V to 1.95V
V
IH
High-Level Input Voltage
V
CC
= 2.3V to 2.7V
V
CC
= 3V to 3.6V
V
CC
= 4.5V to 5.5V
V
CC
= 1.65V to 1.95V
V
IL
Low-Level Input Voltage
V
CC
= 2.3V to 2.7V
V
CC
= 3V to 3.6V
V
CC
= 4.5V to 5.5V
V
I
V
O
Input Voltage
Output Voltage
V
CC
= 1.65V
V
CC
= 2.3V
I
OL
Low-Level Output Current
V
CC
= 3V
V
CC
= 4.5V
V
CC
= 1.8V ± 0.15V, 2.5V ± 0.2V
Δt/ΔV
T
A
Note:
Min
1.65
1.5
0.65 X V
CC
1.7
2
0.7 X V
CC
Max
5.5
Unit
V
V
V
0.35 X V
CC
0.7
0.8
0.3 X V
CC
0
0
5.5
V
CC
4
8
16
24
32
20
10
10
-40
+125
°C
ns/V
mA
V
V
V
Input transition rise or fall rate
Operating free-air temperature
V
CC
= 3.3V ± 0.3V
V
CC
= 5V ± 0.5V
5. Unused inputs should be held at V
CC
or Ground.
Electrical Characteristics
Symbol
Parameter
Test Conditions
I
OL
= 100μA
I
OL
= 4mA
V
OL
Low-Level Output
Voltage
I
OL
= 8mA
I
OL
= 16mA
I
OL
= 24mA
I
OL
= 32mA
I
I
I
OZ
I
OFF
I
CC
ΔI
CC
Input Current
Z State
Leakage Current
Power Down Leakage
Current
Supply Current
Additional Supply
Current
V
I
= 5.5V or GND
V
O
= 0 to 5.5V
V
I
or V
O
= 5.5V
V
I
= 5.5V or GND, I
O
= 0
Input at V
CC
-0.6V
V
CC
1.65V to 5.5V
1.65V
2.3V
3V
4.5V
0 to 5.5V
3.6V
0V
1.65V to 5.5V
3V to 5.5V
-40°C to +85°C
Min
Max
0.1
0.45
0.3
0.4
0.55
0.55
±5
± 10
± 10
10
500
-40°C to +125°C
Min
Max
0.1
0.70
0.45
0.60
0.80
0.80
± 20
± 10
± 20
40
5000
μA
μA
μA
μA
μA
V
Unit
74LVC2G06
Document number: DS35161 Rev. 5 - 2
3 of 11
www.diodes.com
October 2013
© Diodes Incorporated
74LVC2G06
Package Characteristics
(All typical values are at V
CC
= 3.3V, T
A
= +25°C.)
Symbol
C
I
Parameter
Input Capacitance
Package
Typical of all packages
SOT26
SOT363
θ
JA
Thermal Resistance Junction-
to-Ambient
X2-DFN1410-6
X2-DFN1409-6
X2-DFN1010-6
SOT26
SOT363
θ
JC
Thermal Resistance Junction-
to-Case
X2-DFN1410-6
X2-DFN1409-6
X2-DFN1010-6
Note:
Conditions
Vcc = 3.3V
V
I
= V
CC
– or GND
Min
Typ
3.5
204
371
Max
Unit
pF
(Note 6)
430
450
510
52
143
°C/W
(Note 6)
190
225
250
°C/W
6. Test condition for SOT26, SOT363, X2-DFN1410-6, X2-DFN1409-6 and X2-DFN1010 -6: Device mounted on FR-4 substrate PC board, 2oz copper
with minimum recommended pad layout.
Switching Characteristics
T
A
=-40°C to +85°C,
C
L
= 30 or 50pF (see Figure 1)
Parameter
t
pd
From
(Input)
A
TO
(OUTPUT)
Y
V
CC
= 1.8V
± 0.15V
Min
0.5
Max
6.5
V
CC
= 2.5V
± 0.2V
Min
0.5
Max
3.9
V
CC
= 3.3V
± 0.3V
Min
0.5
Max
3.4
V
CC
= 5V
± 0.5V
Min
0.5
Max
2.9
ns
Unit
T
A
=-40°C to +125°C,
C
L
= 30 or 50pF (see Figure 1)
Parameter
t
pd
From
(Input)
A
TO
(OUTPUT)
Y
V
CC
= 1.8V
± 0.15V
Min
Max
0.5
8.2
V
CC
= 2.5V
± 0.2V
Min
Max
0.5
4.9
V
CC
= 3.3V
± 0.3V
Min
Max
0.5
4.3
V
CC
= 5V
± 0.5V
Min
Max
0.5
3.7
Unit
ns
Operating Characteristics
T
A
= +25°C
Parameter
C
pd
Power dissipation
capacitance
Test
Conditions
f = 10 MHz
V
CC
= 1.8V
Typ
3
V
CC
= 2.5V
Typ
3
V
CC
= 3.3V
Typ
4
V
CC
= 5V
Typ
6
Unit
pF
74LVC2G06
Document number: DS35161 Rev. 5 - 2
4 of 11
www.diodes.com
October 2013
© Diodes Incorporated
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