IS64WV3216BLL
IS61WV3216BLL
32K x 16 HIGH-SPEED CMOS STATIC RAM
JULY 2009
FEATURES
•
•
High-speed access time:
12 ns: 3.3V +
10%
15 ns: 2.5V-3.6V
CMOS low power operation:
50 mW (typical) operating
25 µW (typical) standby
TTL compatible interface levels
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Automotive Temperature Available
Lead-free available
DESCRIPTION
The
ISSI
IS61/64WV3216BLL is a high-speed, 524,288-bit
static RAM organized as 32,768 words by 16 bits. It
is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with in-
novative circuit design techniques, yields access times as
fast as 12ns (3.3V + 10%) and 15ns (2.5V-3.6V) with low
power consumption.
When
CE
is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE
and
OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB)
access.
The IS61/64WV3216BLL is packaged in the JEDEC
standard 44-pin TSOP-II, and 48-pin mini BGA (6mm x
8mm).
•
•
•
•
•
•
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
07/22/09
1
IS64WV3216BLL
IS61WV3216BLL
TRUTH TABLE
I/O PIN
Mode
Not Selected
Output Disabled
Read
Write
WE
X
H
X
H
H
H
L
L
L
CE
H
L
L
L
L
L
L
L
L
OE
X
H
X
L
L
L
X
X
X
LB
X
X
H
L
H
L
L
H
L
UB
X
X
H
H
L
L
H
L
L
I/O0-I/O7
High-Z
High-Z
High-Z
d
out
High-Z
d
out
d
In
High-Z
d
In
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
d
out
d
out
High-Z
d
In
d
In
V
dd
Current
I
sb
1
, I
sb
2
I
cc
I
cc
I
cc
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
term
t
stg
P
t
V
dd
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
V
dd
Related to GND
Value
–0.5 to V
dd
+0.5
–65 to +150
1.5
-0.2 to +3.9
Unit
V
°C
W
V
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
OPERATING RANGE (V
dd
)
Range
Commercial
Industrial
Automotive
Ambient Temperature
0°C to +70°C
–40°C to +85°C
–40°C to +125°C
V
dd
(15 ns)
2.5V-3.6V
2.5V-3.6V
2.5V-3.6V
V
dd
(12 ns)
3.3V +
10%
3.3V +
10%
3.3V +
10%
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
07/22/09
3
IS64WV3216BLL
IS61WV3216BLL
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
dd
= 2.5V-3.6V
Symbol
V
oH
V
oL
V
IH
V
IL
I
LI
I
Lo
Note:
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
=
Min., I
oH
=
–1.0 mA
V
dd
=
Min., I
oL
=
1.0 mA
GND ≤
V
In
≤
V
dd
GND ≤
V
out
≤
V
dd
,
Outputs Disabled
Min.
2.3
—
2.0
–0.3
–2
–2
Max.
—
0.4
V
dd
+ 0.3
0.8
2
2
Unit
V
V
V
V
µA
µA
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.
V
IH
(max.) = V
dd
+
0.3V dc; V
IH
(max.) = V
dd
+
2.0V Ac (pulse width
2.0 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
dd
= 3.3V + 10%
Symbol
V
oH
V
oL
V
IH
V
IL
I
LI
I
Lo
Note:
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
=
Min., I
oH
=
–4.0 mA
V
dd
=
Min., I
oL
=
8.0 mA
GND ≤
V
In
≤
V
dd
GND ≤
V
out
≤
V
dd
,
Outputs Disabled
Min.
2.4
—
2
–0.3
–2
–2
Max.
—
0.4
V
dd
+ 0.3
0.8
2
2
Unit
V
V
V
V
µA
µA
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width 2.0 ns). Not 100% tested.
V
IH
(max.) = V
dd
+
0.3V dc; V
IH
(max.) = V
dd
+
2.0V Ac (pulse width
2.0 ns). Not 100% tested.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
cc
Parameter
Test Conditions
Options
com
.
Ind
.
Auto
-15 ns
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
30
40
50
20
5
5
5
20
50
75
6
Unit
mA
mA
uA
-12 ns
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
35
45
60
20
5
5
5
20
50
75
6
V
dd
Dynamic Operating
V
dd
=
Max.,
Supply Current
I
out
= 0
mA, f = f
mAX
I
cc
1
Operating Supply
Current
V
dd
= Max.,
Iout = 0mA, f = 0
V
dd
=
Max.,
CE
≥
V
dd
– 0.2V,
V
In
≥
V
dd
– 0.2V,
or
V
In
≤
0.2V,
f = 0
typ.
(2)
om
.
c
Ind
.
Auto
com
.
Ind
.
Auto
I
sb
2
CMOS Standby
Current (CMOS Inputs)
typ.
(2)
Note:
1. At f = f
mAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
dd
=2.5V, T
A
=25
o
C. Not 100% tested.
CAPACITANCE
(1)
Symbol
c
In
c
out
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
In
= 0V
V
out
= 0V
Max.
6
8
Unit
pF
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
07/22/09
5
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