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IS61NLP51236B-200B3LI-TR: 产品描述sram 18mb, 200mhz 512k x 36 sync sram; 产品类别半导体其他集成电路（IC）; 文件大小2MB，共39页; 制造商All Sensors; 标准

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IS61NLP51236B-200B3LI-TR在线购买

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IS61NLP51236B-200B3LI-TR概述

sram 18mb, 200mhz 512k x 36 sync sram

IS61NLP51236B-200B3LI-TR规格参数

参数名称	属性值
Manufacture	ISSI
产品种类 Product Category	SRAM
RoHS	Yes
Memory Size	18 Mbi
Organizati	512 k x 36
Access Time	3 ns
电源电压-最大 Supply Voltage - Max	3.465 V
Supply Voltage - Mi	3.135 V
Maximum Operating Curre	240 mA
最大工作温度 Maximum Operating Temperature	+ 85 C
最小工作温度 Minimum Operating Temperature	- 40 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	BGA-165
系列 Packaging	Reel
Maximum Clock Frequency	200 MHz
Memory Type	Synchronous SRAM

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IS61NLP51236(32)B/IS61NVP51236(32)B/IS61NVVP51236(32)B

IS61NLP102418B/IS61NVP102418B/IS61NVVP102418B

512K x36 and 1024K x18 18Mb, PIPELINE 'NO WAIT' STATE BUS

SYNCHRONOUS SRAM

JULY 2014

FEATURES

•

100 percent bus utilization

•

No wait cycles between Read and Write

•

Internal self-timed write cycle

•

Individual Byte Write Control

•

Single R/W (Read/Write) control pin

•

Clock controlled, registered address, data and

control

•

Interleaved or linear burst sequence control

using MODE input

•

Three chip enables for simple depth

expansion and address pipelining

•

Power Down mode

•

Common data inputs and data outputs

•

/CKE pin to enable clock and suspend

operation

•

JEDEC 100-pin QFP, 165-ball BGA and 119-

ball BGA packages

•

Power supply:

NLP: V

3.3V (± 5%), V

DDQ

3.3V/2.5V (± 5%)

NVP: V

2.5V (± 5%), V

DDQ

2.5V (± 5%)

NVVP: V

1.8V (± 5%), V

DDQ

1.8V (± 5%)

•

JTAG Boundary Scan for BGA packages

•

Commercial, Industrial and Automotive (x36)

temperature support

•

Lead-free available

•

For leaded option, please contact ISSI.

DESCRIPTION

The 18Meg product family features high-speed,

low-power synchronous static RAMs designed to

provide a burstable, high-performance, 'no wait'

state, device for networking and communications

applications. They are organized as 512K words

by 36 bits and 1024K words by 18 bits, fabricated

with

ISSI's

advanced CMOS technology.

Incorporating a 'no wait' state feature, wait cycles

are eliminated when the bus switches from read

to write, or write to read. This device integrates a

2-bit burst counter, high-speed SRAM core, and

high-drive capability outputs into a single

monolithic circuit.

All synchronous inputs pass through registers are

controlled by a positive-edge-triggered single

clock input. Operations may be suspended and all

synchronous inputs ignored when Clock Enable,

/CKE is HIGH. In this state the internal device will

hold their previous values.

All Read, Write and Deselect cycles are initiated

by the ADV input. When the ADV is HIGH the

internal burst counter is incremented. New

external addresses can be loaded when ADV is

LOW.

Write cycles are internally self-timed and are

initiated by the rising edge of the clock inputs and

when /WE is LOW. Separate byte enables allow

individual bytes to be written.

A burst mode pin (MODE) defines the order of the

burst sequence. When tied HIGH, the interleaved

burst sequence is selected. When tied LOW, the

linear burst sequence is selected.

FAST ACCESS TIME

Symbol

tKQ

tKC

Parameter

Clock Access Time

Cycle time

Frequency

-250

2.6

250

-200

3.0

200

Units

MHz

any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein.

Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders

for products.

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A

7/11/2014

IS61NLP51236B-200B3LI-TR相似产品对比

	IS61NLP51236B-200B3LI-TR	IS61NLP51236B-200B3LI	IS61NLP51236B-200TQLI	IS61NLP51236B-200TQLI-TR
描述	sram 18mb, 200mhz 512k x 36 sync sram	sram 18mb, 200mhz 512k x 36 sync sram	sram 18mb, 200mhz 512k x 36 sync sram	sram 18mb 200mhz 512k x 36 sync sram
Manufacture	ISSI	ISSI	ISSI	ISSI
产品种类 Product Category	SRAM	SRAM	SRAM	SRAM
RoHS	Yes	Yes	Yes	Yes
Memory Size	18 Mbi	18 Mbi	18 Mbi	18 Mbi
Organizati	512 k x 36	512 k x 36	512 k x 36	512 k x 36
Access Time	3 ns	3 ns	3 ns	3 ns
电源电压-最大 Supply Voltage - Max	3.465 V	3.465 V	3.465 V	3.465 V
Supply Voltage - Mi	3.135 V	3.135 V	3.135 V	3.135 V
Maximum Operating Curre	240 mA	240 mA	240 mA	240 mA
最大工作温度 Maximum Operating Temperature	+ 85 C	+ 85 C	+ 85 C	+ 85 C
最小工作温度 Minimum Operating Temperature	- 40 C	- 40 C	- 40 C	- 40 C
安装风格 Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	BGA-165	BGA-165	QFP-100	QFP-100
Maximum Clock Frequency	200 MHz	200 MHz	200 MHz	200 MHz
Memory Type	Synchronous SRAM	Synchronous SRAM	Synchronous SRAM	Synchronous SRAM

IS61NLP51236B-200B3LI-TR

IS61NLP51236B-200B3LI-TR在线购买

IS61NLP51236B-200B3LI-TR概述

IS61NLP51236B-200B3LI-TR规格参数

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