IS66WV1M16DALL
IS66WV1M16DBLL
16Mb LOW VOLTAGE,
ULTRA LOW POWER PSEUDO CMOS STATIC RAM
FEATURES
DESCRIPTION
• High-speed access time:
– 70ns (IS66WV1M16DALL/DBLL)
– 55ns (IS66WV1M16DBLL)
• CMOS low power operation
• Single power supply
– V
dd
= 1.7V - 1.95V
(IS66WV1M16dALL)
– V
dd
= 2.5V - 3.6V
(IS66WV1M16dBLL)
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available
PRELIMINARY INFORMATION
MARCH 2011
The
ISSI
IS66WV1M16DALL/DBLL is a high-speed,
16M bit static RAMs organized as 1Mb words by 16
bits. It is fabricated using
ISSI
's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is LOW, CS2 is HIGH and both
LB
and
UB
are HIGH, the device assumes a standby mode
at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory. A
data byte allows Upper Byte
(UB)
and Lower Byte (LB)
access.
The IS66WV1M16DALL/DBLL is packaged in the JEDEC
standard 48-ball mini BGA (6mm x 8mm). The device is
also available for die sales.
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1M x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS2
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause
failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written
assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
02/04/2011
1
IS66WV1M16DALL
IS66WV1M16DBLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
terM
t
BIAS
V
dd
t
Stg
P
t
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
V
dd
Related to GND
Storage Temperature
Power Dissipation
Value
–0.2 to V
dd
+0.3
–40 to +85
–0.2 to +3.8
–65 to +150
1.0
Unit
V
°C
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
dd
= 2.5V-3.6V
Symbol Parameter
V
oH
Output HIGH Voltage
V
oL
V
IH
V
IL
I
LI
I
Lo
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Test Conditions
I
oH
=
-1 mA
I
oL
=
2.1 mA
V
dd
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
Min.
2.2
—
2.2
–0.2
–1
–1
Max.
—
0.4
V
dd
+ 0.3
0.6
1
1
Unit
V
V
V
V
µA
µA
GND
≤
V
In
≤
V
dd
GND
≤
V
out
≤
V
dd
,
Outputs Disabled
Notes:
V
IL
(min.) = –2.0V AC (pulse width < 10ns). Not 100% tested.
V
IH
(max.) = V
dd
+ 2.0V AC (pulse width < 10ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
dd
= 1.7V-1.95V
Symbol Parameter
V
oH
Output HIGH Voltage
V
oL
Output LOW Voltage
V
IH
Input HIGH Voltage
V
IL
Input LOW Voltage
I
LI
Input Leakage
I
Lo
Output Leakage
Test Conditions
I
oH
=
-0.1 mA
I
oL
=
0.1 mA
V
dd
1.7-1.95V
1.7-1.95V
1.7-1.95V
1.7-1.95V
Min.
1.4
—
1.4
–0.2
–1
–1
Max.
—
0.2
V
dd
+ 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
GND
≤
V
In
≤
V
dd
GND
≤
V
out
≤
V
dd
,
Outputs Disabled
Notes:
V
IL
(min.) = –1.0V AC (pulse width < 10ns). Not 100% tested.
V
IH
(max.) = V
dd
+ 1.0V AC (pulse width < 10ns). Not 100% tested.
4
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
02/04/2011
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