IS62WV25616ALL
IS62WV25616BLL
256K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC SRAM
FEATURES
•
•
•
•
•
•
•
•
•
High-speed access time: 55ns, 70ns
CMOS low power operation
36 mW (typical) operating
9 µW (typical) CMOS standby
TTL compatible interface levels
Single power supply
1.65V--2.2V V
dd
(IS62WV25616ALL)
2.5V--3.6V V
dd
(IS62WV25616BLL)
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Lead-free available
JUNE 2011
speed, low power, 4M bit SRAMs organized as 256K words
by 16 bits. It is fabricated using
ISSI
's high-performance
CMOS technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When CS1 is HIGH (deselected) or when
CS1 is LOW and
both LB and UB are HIGH, the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable (WE)
controls both writing and reading of the memory. A data byte
allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62WV25616ALL/IS62WV25616BLL are packaged
in the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin
mini BGA (6mmx8mm).
DESCRIPTION
The
ISSI
IS62WV25616ALL/IS62WV25616BLL are high-
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16
MEMORY ARRAY
V
DD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CS1
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-
ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
06/03/2011
1
IS62WV25616ALL, IS62WV25616BLL
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
WE
X
X
H
H
H
H
h
L
L
l
CS1
H
X
L
L
L
L
l
L
L
l
OE
X
X
H
H
L
L
l
X
X
X
LB
X
H
L
X
L
H
l
L
H
l
UB
X
H
X
L
H
L
l
H
L
l
I/O PIN
I/O0-I/O7
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
d
out
High-Z
d
out
d
In
High-Z
d
In
High-Z
High-Z
High-Z
High-Z
High-Z
d
out
d
out
High-Z
d
In
d
In
V
dd
Current
I
sb
1
, I
sb
2
I
sb
1
, I
sb
2
I
cc
I
cc
I
cc
I
cc
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
term
V
dd
t
stg
P
t
Parameter
Terminal Voltage with Respect to GND
V
dd
Related to GND
Storage Temperature
Power Dissipation
Value
–0.2 to V
dd
+0.3
–0.2 to V
dd
+0.3
–65 to +150
1.0
Unit
V
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the op-
erational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
OPERATING RANGE (V
dd
)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
IS62WV25616ALL
1.65V - 2.2V
1.65V - 2.2V
IS62WV25616BLL
2.5V-3.6V
2.5V-3.6V
Symbol Parameter
V
oh
V
ol
V
Ih
V
Il
(1)
I
lI
I
lo
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Test Conditions
I
oh
=
-0.1 mA
I
oh
=
-1 mA
V
dd
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
1.65-2.2V
2.5-3.6V
Min.
1.4
2.2
—
—
1.4
2.2
–0.2
–0.2
–1
–1
Max.
—
—
0.2
0.4
V
dd
+ 0.2
V
dd
+ 0.3
0.4
0.8
1
1
Unit
V
V
V
V
V
V
V
V
µA
µA
I
ol
=
0.1 mA
1.65-2.2V
I
ol
=
2.1 mA
2.5-3.6V
1.65-2.2V
2.5-3.6V
1.65-2.2V
2.5-3.6V
GND ≤ V
In
≤
V
dd
GND ≤ V
out
≤
V
dd
,
Outputs Disabled
Notes: 1. V
Il
(min.) = –1.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
06/03/2011
3
IS62WV25616ALL, IS62WV25616BLL
IS62WV25616ALL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
cc
I
cc
1
I
sb
1
Parameter
V
dd
Dynamic Operating
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
Test Conditions
V
dd
=
Max.,
I
out
= 0
mA, f = f
maX
V
dd
=
Max., CS1 = 0.2V
WE
= V
dd
-0.2V
f=1
mhz
V
dd
=
Max.,
V
In
= V
Ih
or V
Il
CS1 =
V
Ih
, f = 1 MH
z
OR
Com.
Ind.
Com.
Ind.
Com.
Ind.
Max.
70
25
30
10
10
0.35
0.35
Unit
mA
mA
mA
I
sb
2
ULB Control
V
dd
= Max., V
In
= V
Ih
or V
Il
CS1 = V
Il
, f = 0, UB = V
Ih
, LB = V
Ih
Com.
Ind.
15
15
µA
CMOS Standby
V
dd
=
Max.,
Current (CMOS Inputs)
CS1 ≥ V
dd
– 0.2V,
V
In
≥
V
dd
– 0.2V,
or
V
In
≤
0.2V,
f = 0
OR
ULB Control
V
dd
= Max., CS1 = V
Il
,
V
In
≤ 0.2V, f = 0; UB / LB = V
dd
– 0.2V
IS62WV25616BLL, POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
cc
I
cc
1
I
sb
1
Parameter
V
dd
Dynamic Operating
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
Test Conditions
V
dd
=
Max.,
I
out
= 0
mA, f = f
maX
V
dd
=
Max., CS1 = 0.2V
WE
= V
dd
-0.2V
f=1
mhz
V
dd
=
Max.,
V
In
= V
Ih
or V
Il
CS1 =
V
Ih
, f = 1 MH
z
OR
Com.
Ind.
Com.
Ind.
Com.
Ind.
Max.
55
40
45
15
15
0.35
0.35
Max.
70
35
40
15
15
0.35
0.35
Unit
mA
mA
mA
I
sb
2
V
dd
= Max., V
In
= V
Ih
or V
Il
CS1 = V
Il
, f = 0, UB = V
Ih
, LB = V
Ih
CMOS Standby
V
dd
=
Max.,
Com.
Current (CMOS Inputs)
CS1 ≥ V
dd
– 0.2V,
Ind.
V
In
≥
V
dd
– 0.2V,
or
typ.
(1)
V
In
≤
0.2V,
f = 0
OR
ULB Control
ULB Control
15
15
3
15
15
µA
V
dd
= Max., CS1 = V
Il
,
V
In
≤ 0.2V, f = 0; UB / LB = V
dd
– 0.2V
Note:
1. Typical values are measured at V
dd
= 3.0V, T
a
= 25
o
C. Not 100% tested.
4 Integrated
Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. E
06/03/2011
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
