A Product Line of
Diodes Incorporated
PAM8404
3W/CH FILTERLESS STEREO CLASS-D AUDIO AMPLIFIER
Description
The PAM8404 is a 3W high efficiency filterless Class-D audio
amplifier in 4mmX4mm and 2mmX2mm wafer chip scale (WCSP)
packages that requires few external components.
Features like 89% efficiency, -63dB PSRR, improved RF-rectification
immunity, and very small PCB area make the PAM8404 Class-D
amplifier ideal for cellular handset and PDA applications.
In cellular handsets, the earpiece, speaker phone, and melody ringer
can each be driven by the PAM8404. The PAM8404 allows
independent gain by summing signals from seperate sources, and
has as low as 43µV noise floor.
PAM8404 is available in QFN 4mmx4mm and WCSP 2mmx2mm
packages.
Pin Assignments
Features
3W Output at 10% THD with a 4Ω Load and 5V Supply
Supply Voltage from 2.5V to 5.5V
Efficiency Up to 89%
Superior Low Noise without Input
Few External Components to Save the Space and Cost
Short Circuit Protection
Thermal Shutdown
Space Saving Packages :
2mm X 2mmWCSP
4mm X 4mm Thin QFN
Pb-Free Packages
Applications
LCD Monitor / TV Projector
Notebook Computers
Portable Speakers
Portable DVD Players, Game Machines
Cellular Phones/Speaker Phones
PAM8404
Document number: DSxxxxx Rev. 1 - 1
1 of 18
www.diodes.com
November 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8404
Typical Applications Circuit
Pin Descriptions
Pin
Name
G1
OUTL+
PVDD
PGND
OUTL-
NC
SDL
SDR
AVDD
OUTR-
OUTR+
G0
INR+
INR-
AGND
INL-
INL+
Pin Number
QFN4x4
WCSP2x2
1
B2
2
A3
313
A2
412
C4
5
A4
610
—
7
B4
8
B3
9
D2
11
D4
14
D3
15
C2
16
D1
17
C1
18
C3
19
B1
20
A1
Function
Gain Select (MSB)
Left Channel Positive Differential Output
Power Supply (Must be Same Voltage as AVDD)
Power Ground
Left Channel Negative Differential Output
Not Connected
Left Channel Shutdown Terminal (active low)
Right Channel Shutdown Terminal (active low)
Analog Supply (Must be Same Voltage as PVDD)
Right Channel Negative Differential Output
Right Channel Positive Differential Output
Gain Select (LSB)
Right Channel Positive Input
Right Channel Negative Input
Analog Ground
Left Channel Negative Input
Left Channel Positive Input
PAM8404
Document number: DSxxxxx Rev. 1 - 1
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www.diodes.com
November 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8404
Functional Block Diagram
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may
affect device reliability. All voltages are with respect to ground.
Parameter
Supply Voltage
Input Voltage
Maximum Junction Temperature
Storage Temperature
Soldering Temperature
Rating
6.0
-0.3 to V
DD
+0.3
150
-65 to +150
250, 10sec
Unit
V
°C
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Parameter
Supply Voltage Range
Operation Temperature Range
Junction Temperature Range
Rating
2.5 to 5.5
-40 to +85
-40 to +125
Unit
V
°C
°C
PAM8404
Document number: DSxxxxx Rev. 1 - 1
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November 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8404
Thermal Information
Parameter
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Package
WCSP2x2-16
QFN4x4-20
WCSP2x2-16
QFN4x4-20
Symbol
θ
JA
θ
JC
Max
64
31
—
13
Unit
°C/W
Electrical Characteristics
(@T
A
= +25°C, AVDD = PVDD = 5V, GND = PGND = 0V, unless otherwise specified.)
QFN4X4-20
Symbol
V
DD
Parameter
Supply Power
THD+N = 10%, f = 1kHz, R
L
= 4Ω
THD+N = 1%, f = 1kHz, R
L
= 4Ω
P
O
Output Power
THD+N = 10%, f = 1kHz, R
L
= 8Ω
THD+N = 1%, f = 1kHz, R
L
= 8Ω
V
DD
= 5.0V, Po = 0.5W, R
L
= 8Ω
THD+N
Total Harmonic Distortion Plus
Noise
V
DD
= 3.6V, Po = 0.5W, R
L
= 8Ω
V
DD
= 5.0V, Po = 1W, R
L
= 4Ω
V
DD
= 3.6V, Po = 1W, R
L
= 4Ω
PSRR
C
S
SNR
V
N
Dyn
η
I
Q
I
SD
R
DS(ON)
fsw
V
OS
Power Supply Ripple Rejection
Crosstalk
Signal-to-Noise
Output Noise
Dynamic Range
Efficiency
Quiescent Current
Shutdown Current
Static Drain-to-Source On-State
Resistor
Switching Frequency
Output Offset Voltage
V
DD
= 5.0V, Inputs AC-Grounded with
C
IN
= 1.0μF
V
DD
= 5V, Po = 0.5W, R
L
= 4Ω,
Gv = 23dB
V
DD
= 5V, V
ORMS
= 1VGv = 23dB
V
DD
= 5V, Inputs AC-Grounded with
C
IN
= 1μF
BW 22Hz – 22kHz
V
DD
= 5V, THD = 1%
R
L
= 8Ω, THD = 10%
R
L
= 4Ω, THD = 10%
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 5.5V
I
DS
= 500mA,V
GS
= 5V
V
DD
= 3V to 5V
V
IN
= 0V, V
DD
= 5V
G0 = L, G1 = L
G0 = H, G1 = L
G0 = L, G1 = H
G0 = H, G1 = H
V
DD
= 5V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 5.0V
V
DD
= 3.6V
f = 1kHz
f = 1kHz
f = 100kHz
f = 1kHz
f = 1kHz
A-weighting
A-weighting
No A-weighting
A-weighting
f = 1kHz
No load
V
SD
= 0.3V
PMOS
NMOS
Test Conditions
Min
2.5
3
1.5
2.35
1.2
1.7
0.9
1.4
0.7
0.15
0.27
0.23
0.24
-48
-63
-93
87
43
59
97
89
84
11
6
<1
250
170
300
10
6
12
18
24
150
50
dB
%
mA
µA
mΩ
kHz
mV
Typ
Max
5.5
Units
V
W
W
W
W
%
%
dB
dB
dB
µV
Gain
Closed-Loop Voltage Gain
V
DD
= 5V, RL = 4Ω, f = 1kHz
dB
OTP
OTH
Over Temperature Protection
Over Temperature Hysterisis
No Load, Junction Temperature
°C
PAM8404
Document number: DSxxxxx Rev. 1 - 1
4 of 18
www.diodes.com
November 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM8404
Electrical Characteristics
(@T
A
= +25°C, AVDD = PVDD = 5V, GND = PGND = 0V, unless otherwise specified.)
WCSP2x2-16
Symbol
V
DD
Parameter
Test Conditions
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 5.0V
V
DD
= 3.6V
f = 1kHz
f = 1kHz
f = 217kHz
f = 1kHz
A-weighting
A-weighting
No A-weighting
A-weighting
f = 1kHz
No load
V
SD
= 0.3V
PMOS
NMOS
Min
2.5
THD+N = 10%, f = 1kHz, R
L
= 4Ω
THD+N = 1%, f = 1kHz, R
L
= 4Ω
P
O
Output Power
THD+N = 10%, f = 1kHz, R
L
= 8Ω
THD+N = 1%, f = 1kHz, R
L
= 8Ω
V
DD
= 5.0V, Po = 0.5W, R
L
= 8Ω
THD+N
Total Harmonic Distortion Plus
Noise
V
DD
= 3.6V, Po = 0.5W, R
L
= 8Ω
V
DD
= 5.0V, Po = 1W, R
L
= 4Ω
V
DD
= 3.6V, Po = 1W, R
L
= 4Ω
PSRR
C
S
SNR
V
N
Dyn
η
I
Q
I
SD
R
DS(ON)
fsw
V
OS
Gain
Power Supply Ripple Rejection
Crosstalk
Signal-to-Noise
Output Noise
Dynamic Range
Efficiency
Quiescent Current
Shutdown Current
Static Drain-to-Source On-State
Resistor
Switching Frequency
Output Offset Voltage
V
DD
= 5.0V, Inputs AC-Grounded with
C
IN
= 1.0μF
V
DD
= 5.0V, Po = 0.5W, R
L
= 4Ω,
Gv = 23dB
V
DD
= 5V, V
ORMS
= 1VGv = 23dB
V
DD
= 5V, Inputs AC-Grounded with
C
IN
= 0.47μF
BW 22Hz – 22kHz
V
DD
= 5V, THD = 1%
R
L
= 8Ω, THD = 10%
R
L
= 4Ω, THD = 10%
V
DD
= 5.0V
V
DD
= 3.6V
V
DD
= 2.5V to 5.5V
I
DS
= 500mA,V
GS
= 5V
V
DD
= 5V
V
IN
= 0V, V
DD
= 5V
G0 = L, G1 = L
G0 = H, G1 = L
G0 = L, G1 = H
G0 = H, G1 = H
V
DD
= 5V
2.2
1.2
1.8
1
1.5
0.8
1.2
0.6
0.3
0.4
0.3
0.2
-50
-70
85
34
54
98
85
75
12
7
<1
500
460
300
20
6
12
18
24
150
50
dB
%
mA
µA
mΩ
kHz
mV
Typ
Max
5.5
Units
V
W
W
W
W
%
%
dB
dB
dB
µV
Supply Power
Closed-Loop Voltage Gain
V
DD
= 5V, RL = 4Ω, f = 1kHz
dB
OTP
OTH
Over Temperature Protection
Over Temperature Hysterisis
No Load, Junction Temperature
°C
PAM8404
Document number: DSxxxxx Rev. 1 - 1
5 of 18
www.diodes.com
November 2012
© Diodes Incorporated
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