TPS709
www.ti.com
SBVS186E – MARCH 2012 – REVISED NOVEMBER 2013
150-mA, 30-V, 1-µA I
Q
Voltage Regulators with Enable
1
FEATURES
Ultralow I
Q
: 1
μA
Reverse Current Protection
Low I
SHUTDOWN
: 150 nA
Input Voltage Range: 2.7 V to 30 V
Supports 200-mA Peak Output
Low Dropout: 245 mV at 50 mA
2% Accuracy Over Temperature
Available in Fixed-Output Voltages:
1.2 V to 6.5 V
Thermal Shutdown and Overcurrent Protection
Packages: SOT-23-5, SON-6, SOT-223-4
(1)
The SOT-223-4 (DCY) package is a product preview device.
DESCRIPTION
The TPS709xx series of linear regulators are ultralow,
quiescent current devices designed for power-
sensitive applications. A precision band-gap and error
amplifier provides 2% accuracy over temperature.
Quiescent current of only 1 µA makes these devices
ideal solutions for battery-powered, always-on
systems that require very little idle-state power
dissipation. These devices have thermal-shutdown,
current-limit, and reverse-current protections for
added safety.
These regulators can be put into shutdown mode by
pulling the EN pin low. The shutdown current in this
mode goes down to 150 nA, typical.
The TPS709xx series is available in SON-6, SOT-23-
5, and SOT-223-4 packages.
DBV PACKAGE
SOT-23-5
(TOP VIEW)
•
•
•
•
•
•
•
•
23
•
•
(1)
APPLICATIONS
•
•
•
•
•
•
•
•
Zigbee™ Networks
Home Automation
Metering
Weighing Scales
Portable Power Tools
Remote Control Devices
Wireless Handsets, Smart Phones, PDAs,
WLAN, and Other PC Add-On Cards
White Goods
TYPICAL APPLICATION CIRCUIT
V
IN
1
m
F
GND
EN
TPS709xx
NC
IN
OUT
2.2
m
F
V
OUT
IN
GND
EN
1
2
3
5
OUT
4
NC
DCY PACKAGE
SOT-223-4
(TOP VIEW)
IN
GND
OUT
1
2
3
4
GND
DRV PACKAGE
2-mm
´
2-mm SON-6
(TOP VIEW)
OUT
NC
GND
1
2
3
GND
6
5
4
IN
NC
EN
NOTE: The DCY package is a product preview device.
1
2
3
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Zigbee is a trademark of ZigBee Alliance.
All other trademarks are the property of their respective owners.
Copyright © 2012–2013, Texas Instruments Incorporated
UNLESS OTHERWISE NOTED this document contains
PRODUCTION DATA information current as of publication date.
Products conform to specifications per the terms of Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
TPS709
SBVS186E – MARCH 2012 – REVISED NOVEMBER 2013
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
AVAILABLE OPTIONS
(1)
PRODUCT
TPS709xxyyyz
(1)
V
OUT
XX
is the nominal output voltage (for example 28 = 2.8 V).
YYY
is the package designator
Z
is the package quantity;
R
is for reel (3000 pieces),
T
is for tape (250 pieces)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at
www.ti.com.
ABSOLUTE MAXIMUM RATINGS
(1)
Specified at T
J
= –40°C to +125°C, unless otherwise noted. All voltages are with respect to GND.
VALUE
MIN
V
IN
Voltage
Maximum output current
Output short-circuit duration
Continuous total power dissipation
Temperature
Electrostatic discharge (ESD) ratings
(1)
P
DISS
Junction, T
J
Storage, T
stg
Human body model (HBM)
Charged device model (CDM)
–55
–55
V
EN
V
OUT
I
OUT
–0.3
–0.3
–0.3
Indefinite
See the
Thermal Information
table
+150
+150
2
500
°C
°C
kV
V
MAX
+32
+7
+7
Internally limited
UNIT
V
V
V
Stresses beyond those listed under
absolute maximum ratings
may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under
recommended operating
conditions
is not implied. Exposure to absolute-maximum-rated conditions for extended periods my affect device reliability.
THERMAL INFORMATION
TPS709xx
THERMAL METRIC
(1)
DBV
(SOT-23)
5 PINS
θ
JA
θ
JCtop
θ
JB
ψ
JT
ψ
JB
θ
JCbot
(1)
Junction-to-ambient thermal resistance
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
212.1
78.5
39.5
2.86
38.7
N/A
DCY
(SOT-223)
4 PINS
64.7
47.5
13.9
6.8
13.8
N/A
DRV
(SON)
6 PINS
73.1
97.0
42.6
2.9
42.9
12.8
°C/W
UNITS
For more information about traditional and new thermal metrics, see the
IC Package Thermal Metrics
application report,
SPRA953.
2
Submit Documentation Feedback
Copyright © 2012–2013, Texas Instruments Incorporated
TPS709
www.ti.com
SBVS186E – MARCH 2012 – REVISED NOVEMBER 2013
ELECTRICAL CHARACTERISTICS
At T
A
= –40°C to +85°C, V
IN
= V
OUT (typ)
+ 1 V or 2.7 V (whichever is greater), I
OUT
= 1 mA, V
EN
= 2 V, and C
IN
= C
OUT
= 2.2-μF
ceramic, unless otherwise noted. Typical values are at T
A
= +25°C.
TPS709xx
PARAMETER
V
IN
V
OUT
V
O
Input voltage range
Output voltage range
DC output accuracy
Line regulation
ΔV
O
Load regulation
V
OUT
< 3.3 V
V
OUT
≥
3.3 V
(V
OUT(NOM)
+ 1 V, 2.7 V)
≤
V
IN
≤
30 V
V
IN
= V
OUT
(typ) + 1.5 V or 3 V (whichever is
greater), 100 µA
≤
I
OUT
≤
150 mA
TPS70933, I
OUT
= 50 mA
TPS70933, I
OUT
= 150 mA
V
DO
Dropout voltage
(1) (2)
TPS70950, I
OUT
= 50 mA
TPS70950, I
OUT
= 150 mA
TPS70965, I
OUT
= 50 mA
TPS70965, I
OUT
= 150 mA
I
CL
I
GND
I
SHUTDOWN
PSRR
Output current limit
Ground pin current
Shutdown current
(3)
TEST CONDITIONS
MIN
2.7
1.2
–2
–1
TYP
MAX
30
6.5
2
1
UNIT
V
V
%
%
mV
mV
mV
mV
mV
mV
mV
mV
mA
µA
µA
µA
nA
dB
dB
dB
μV
RMS
3
20
295
960
245
690
180
460
200
320
1.3
1.4
350
150
80
62
52
190
200
500
0.9
0
10
50
650
1400
500
1200
500
1000
500
2.05
2.25
V
OUT
= 0.9 × V
OUT(NOM)
I
OUT
= 0 mA, V
OUT
≤
3.3 V
I
OUT
= 0 mA, V
OUT
> 3.3 V
I
OUT
= 150 mA
V
EN
≤
0.4 V, V
IN
= 2.7 V
f = 10 Hz
Power-supply rejection ratio f = 100 Hz
f = 1 kHz
BW = 10 Hz to 100 kHz, I
OUT
= 10 mA,
V
IN
= 2.7 V, V
OUT
= 1.2 V
V
OUT(NOM)
≤
3.3 V
V
OUT(NOM)
> 3.3 V
V
N
t
STR
V
EN(HI)
I
EN
Output noise voltage
Start-up time
(4)
Enable pin high (enabled)
Enable pin high (disabled)
EN pin current
Reverse current
(flowing out of IN pin)
Reverse current
(flowing into OUT pin)
Thermal shutdown
temperature
Operating junction
temperature
600
1500
0.4
µs
µs
V
V
nA
nA
nA
°C
°C
EN = 1.0 V, V
IN
= 5.5 V
V
OUT
= 3 V, V
IN
= V
EN
= 0 V
V
OUT
= 3 V, V
IN
= V
EN
= 0 V
Shutdown, temperature increasing
Reset, temperature decreasing
–40
300
10
100
+158
+140
+125
I
REV
t
SD
T
J
(1)
(2)
(3)
(4)
°C
V
DO
is measured with V
IN
= 0.98 × V
OUT(NOM)
.
Dropout is only valid when V
OUT
≥
2.8 V because of the minimum input voltage limits.
Measured with V
IN
= V
OUT
+ 3 V for V
OUT
≤
2.5 V. Measured with V
IN
= V
OUT
+ 2.5 V for V
OUT
> 2.5 V.
Startup time = time from EN assertion to 0.95 × V
OUT(NOM)
and load = 47
Ω.
Copyright © 2012–2013, Texas Instruments Incorporated
Submit Documentation Feedback
3
TPS709
SBVS186E – MARCH 2012 – REVISED NOVEMBER 2013
www.ti.com
PIN CONFIGURATIONS
DBV PACKAGE
SOT-23-5
(TOP VIEW)
DCY PACKAGE
SOT-223-4
(TOP VIEW)
OUT
IN
GND
EN
3
4
NC
OUT
3
1
2
4
GND
IN
GND
1
2
5
DRV PACKAGE
SON-6
(TOP VIEW)
OUT
NC
GND
1
2
3
GND
6
5
4
IN
NC
EN
NOTE: The DCY package is a product preview device.
PIN DESCRIPTIONS
PIN
NAME
EN
GND
IN
NC
OUT
PIN NO.
DBV
3
2
1
4
5
DCY
—
2, 4
1
—
3
DRV
4
3
6
2, 5
1
DESCRIPTION
Enable pin. Driving this pin high enables the device. Driving this pin low puts the
device into low current shutdown. This pin has an internal pull-up resistor and can
be left floating to enable the device.
Ground
Unregulated input to the device
No internal connection
Regulated output voltage. A small 2.2-µF or greater ceramic capacitor should be
connected from this pin to ground to assure stability.
4
Submit Documentation Feedback
Copyright © 2012–2013, Texas Instruments Incorporated
TPS709
www.ti.com
SBVS186E – MARCH 2012 – REVISED NOVEMBER 2013
FUNCTIONAL BLOCK DIAGRAM
IN
Current
Limit
Thermal
Shutdown
OUT
EN
Bandgap
Logic
Device
GND
Copyright © 2012–2013, Texas Instruments Incorporated
Submit Documentation Feedback
5