IS61WV12816BLL
IS64WV12816BLL
128K x 16 HIGH-SPEED CMOS STATIC RAM
ISSI
FEBRUARY 2006
®
FEATURES
• High-speed access time:
12 ns: 3.3V + 10%
15 ns: 2.5V-3.6V
• Operating Current: 25mA (typ.)
• Stand by Current: 400µA(typ.)
• TTL and CMOS compatible interface levels
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperatures avail-
able
• Lead-free available
DESCRIPTION
The
ISSI
IS61WV12816BLL and IS64WV12816BLL are
high-speed, 2,097,152-bit static RAM organized as 131,072
words by 16 bits. They are fabricated using
ISSI
's high-
performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
access times as fast as 12 ns with low power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE.
The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61WV12816BLL and IS64WV12816BLL are packaged
in the JEDEC standard 44-pin TSOP (Type II) and 48-pin
mini BGA (6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128Kx16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
02/03/06
1
IS61WV12816BLL
IS64WV12816BLL
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
DD
V
TERM
T
STG
P
T
Note:
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
–0.5 to 4.0V
–0.5 to V
DD
+ 0.5
–65 to + 150
1.0
Unit
V
V
°C
W
ISSI
®
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the opera-
tional sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
OPERATING RANGE (V
DD
)
Range
Industrial
Automotive
Ambient Temperature
–40°C to +85°C
–40°C to +125°C
V
DD
(15 n
S
)
2.5V-3.6V
2.5V-3.6V
V
DD
(12 n
S
)
3.3V + 10%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.5V-3.6V
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Note:
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
DD
= Min., I
OH
= –1.0 mA
V
DD
= Min., I
OL
= 1.0 mA
Min.
1.8
—
2.0
–0.3
Max.
—
0.4
V
DD
+ 0.3
0.4
1
1
Unit
V
V
V
V
µA
µA
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–1
–1
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 3.3V + 10%
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Note:
1.
V
IL
(min.) = –0.3V DC; V
IL
(min.) = –2.0V AC (pulse width - 2.0 ns). Not 100% tested.
V
IH
(max.) = V
DD
+ 0.3V DC; V
IH
(max.) = V
DD
+ 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2
–0.3
Max.
—
0.4
V
DD
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
–1
–1
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
02/03/06
IS61WV12816BLL
IS64WV12816BLL
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
Parameter
V
DD
Operating
Supply Current
Test Conditions
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
Com.
Ind.
Auto
typ.
(2)
Com.
Ind.
Auto
Com.
Ind.
Auto
typ.
(2)
-12ns
Min. Max.
—
—
—
—
—
—
—
—
35
40
25
20
20
750
900
400
ISSI
-15 ns
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
30
35
40
20
20
20
30
750
900
6
400
Unit
mA
®
I
SB
1
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
(CMOS Inputs)
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = max
V
DD
= Max.,
CE
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
mA
I
SB
2
μA
μA
mA
μA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=3.3V, T
A
=25
0
C. Not 100% tested.
CAPACITANCE
(1)
Symbol
C
IN
C
OUT
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
02/03/06
5
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