IS61LV2568L
256K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
•
•
•
•
•
•
•
•
•
High-speed access time: 8, 10 ns
Operating Current: 50mA (typ.)
Standby Current: 700µA (typ.)
Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with
CE
and
OE
options
CE
power-down
TTL compatible inputs and outputs
Single 3.3V power supply
Packages available:
– 36-pin 400-mil SOJ
– 44-pin TSOP (Type II)
Lead-free available
APRIL 2008
DESCRIPTION
The
ISSI
IS61LV2568L is a very high-speed, low power,
262,144-word by 8-bit CMOS static RAM. The IS61LV2568L
is fabricated using
ISSI
's high-performance CMOS tech-
nology. This highly reliable process coupled with innova-
tive circuit design techniques, yields higher performance
and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 36mW (max.) with CMOS input levels.
The IS61LV2568L operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV2568L is available in 36-pin 400-mil SOJ and
44-pin TSOP (Type II) packages.
•
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K X 8
MEMORY ARRAY
V
DD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
04/28/08
1
IS61LV2568L
TRUTH TABLE
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
WE
X
H
H
L
CE
H
L
L
L
OE
X
H
L
X
I/O Operation
High-Z
High-Z
D
OUT
D
IN
V
DD
Current
I
SB
1
, I
SB
2
I
CC
I
CC
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
DD
V
TERM
T
STG
P
D
Parameter
Supply voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
Value
–0.5 to +4.0
–0.5 to V
DD
+ 0.5
–65 to +150
1.0
Unit
V
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
V
DD
(8ns)
3.3V +10%,-5%
V
DD
(10 ns)
3.3V + 10%
3.3V + 10%
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
(1)
Input LOW Voltage
(1)
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2.0
–0.3
–1
–1
Max.
—
0.4
V
DD
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1. V
IL
(min) = –0.3V (DC); V
IL
(min) = –2.0V (pulse width - 2.0 ns).
V
IH
(max) = V
DD
+ 0.3V (DC); V
IH
(max) = V
DD
+ 2.0V (pulse width - 2.0 ns).
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
04/28/08
3
IS61LV2568L
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol
I
CC
Parameter
V
DD
Operating
Supply Current
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
(CMOS Inputs)
Test Conditions
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = Max.
V
DD
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = max
V
DD
= Max.,
CE
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
typ.
(2)
Com.
Ind.
Com.
Ind.
typ.
(2)
-8 ns
Min. Max.
—
—
—
65
50
30
-10 ns
Min. Max.
—
—
—
—
—
—
—
—
60
65
50
25
30
3
4
700
Unit
mA
I
SB
1
mA
I
SB
2
—
—
3
700
mA
mA
μA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
=3.3V, T
A
=25
0
C. Not 100% tested.
CAPACITANCE
(1,2)
Symbol
C
IN
C
I/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 3.3V.
4
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. D
04/28/08
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