DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D168
BZG04 series
Transient voltage suppressor
diodes
Preliminary specification
Supersedes data of 1996 Jun 10
1996 Sep 19
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
UL 94V-O classified plastic
package
•
Transient suppressor stand-off
voltage range:
8.2 to 220 V for 32 types
•
Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
BZG04 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
handbook, 4 columns
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
,,
,,
,,
k
cathode
band
a
Top view
Side view
MSA473
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
P
RSM
PARAMETER
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
CONDITIONS
10/1000
µs
exponential pulse
(see Fig.4); T
j
= 25
°C
prior to
surge; see also Fig.2
MIN.
−
MAX.
300
UNIT
W
T
stg
T
j
−65
−65
+175
+175
°C
°C
1996 Sep 19
2
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
CONDITIONS
I
F
= 0.5 A; see Fig.3
MIN.
−
BZG04 series
MAX.
1.2
V
UNIT
Per type
T
j
= 25
°C
unless otherwise specified.
REVERSE
BREAKDOWN
VOLTAGE
V
(BR)R
(V)
at I
test
MIN.
BZG04-8V2
BZG04-9V1
BZG04-10
BZG04-11
BZG04-12
BZG04-13
BZG04-15
BZG04-16
BZG04-18
BZG04-20
BZG04-22
BZG04-24
BZG04-27
BZG04-30
BZG04-33
BZG04-36
BZG04-39
BZG04-43
BZG04-47
BZG04-51
BZG04-56
BZG04-62
BZG04-68
BZG04-75
BZG04-82
BZG04-91
BZG04-100
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
77
85
94
104
114
TEMPERATURE
COEFFICIENT
S
Z
(%/K) at I
test
MIN.
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.06
0.07
0.07
0.07
0.07
0.08
0.08
0.08
0.08
0.09
0.09
0.09
0.09
MAX.
0.09
0.10
0.10
0.10
0.10
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
TEST
CURRENT
I
test
(mA)
50
50
50
50
50
25
25
25
25
25
25
25
25
10
10
10
10
10
10
10
10
10
10
5
5
5
5
CLAMPING
VOLTAGE
V
(CL)R
(V) at I
RSM
(A)
note 1
MAX.
14.8
15.7
17.0
18.9
20.9
22.9
25.6
28.4
31.0
33.8
38.1
42.2
46.2
50.1
54.1
60.7
65.5
70.8
78.6
86.5
94.4
103.5
114
126
139
152
167
20.3
19.1
17.7
15.9
14.4
13.1
11.7
10.6
9.7
8.9
7.9
7.1
6.5
6.0
5.5
4.9
4.6
4.2
3.8
3.5
3.2
2.9
2.6
2.4
2.2
2.0
1.8
REVERSE CURRENT
at STAND-OFF
VOLTAGE
I
R
(µA)
MAX.
20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
at V
R
(V)
TYPE
NUMBER
1996 Sep 19
3
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
BZG04 series
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
V
(BR)R
(V)
at I
test
MIN.
124
138
153
168
188
208
228
251
TEMPERATURE
COEFFICIENT
S
Z
(%/K) at I
test
MIN.
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
MAX.
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
TEST
CURRENT
I
test
(mA)
5
5
5
5
5
2
2
2
CLAMPING
VOLTAGE
V
(CL)R
(V) at I
RSM
(A)
note 1
MAX.
185
204
224
249
276
305
336
380
1.6
1.5
1.3
1.2
1.1
1.0
0.9
0.8
REVERSE CURRENT
at STAND-OFF
VOLTAGE
I
R
(µA)
MAX.
5
5
5
5
5
5
5
5
at V
R
(V)
110
120
130
150
160
180
200
220
BZG04-110
BZG04-120
BZG04-130
BZG04-150
BZG04-160
BZG04-180
BZG04-200
BZG04-220
Note
1. Non-repetitive peak reverse current in accordance with
“IEC 60-1, Section 8”
(10/1000
µs
pulse); see Fig.4.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on an Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of Cu-layer
≥35 µm,
see Fig.5.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 µm,
see Fig.5.
For more information please refer to the
“General Part of associated Handbook”.
CONDITIONS
VALUE
25
100
150
UNIT
K/W
K/W
K/W
1996 Sep 19
4
Philips Semiconductors
Preliminary specification
Transient voltage suppressor diodes
GRAPHICAL DATA
BZG04 series
10
4
handbook, halfpage
PZSM
(W)
10
3
MBH452
handbook, halfpage
3
MBH453
IF
(A)
2
10
2
1
10
10
−2
10
−1
0
1
tp (ms)
10
0
1
VF (V)
2
T
j
= 25
°C
prior to surge.
T
j
= 25
°C.
Fig.2
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
Fig.3
Forward current as a function of forward
voltage; typical values.
IRSM
handbook, halfpage
(%)
100
90
50
4.5
50
2.5
10
t
t1
t2
MGD521
50
1.25
MSB213
In accordance with
“IEC 60-1, Section 8”.
t
1
= 10
µs.
t
2
= 1000
µs.
Dimensions in mm.
Fig.4
Non-repetitive peak reverse current pulse
definition.
Fig.5 Printed-circuit board for surface mounting.
1996 Sep 19
5
FPGA/CPLD
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