ND2012L/2020L
N-Channel Depletion-Mode MOSFET Transistors
Product Summary
Part Number
ND2012L
ND2020L
V
(BR)DSV
Min (V)
200
r
DS(on)
Max (W)
12
20
V
GS(off)
(V)
–1.5 to –4
–0.5 to –2.5
I
D
(A)
0.16
0.132
Features
D
D
D
D
D
High Breakdown Voltage: 220 V
Normally “On” Low r
DS
Switch: 9
W
Low Input and Output Leakage
Low-Power Drive Requirement
Low Input Capacitance
Benefits
D
D
D
D
D
Full-Voltage Operation
Low Offset Voltage
Low Error Voltage
Easily Driven Without Buffer
High-Speed Switching
Applications
D
D
D
D
D
Normally “On” Switching Circuits
Current Sources/Limiters
Power Supply, Converter Circuits
Solid-State Relays
Telecom Switches
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
Absolute Maximum Ratings (T
A
= 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
Pulsed Drain Current
a
Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197.
Applications information may also be obtained via FaxBack, request document #70612.
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
ND2012L
200
"30
0.16
0.1
0.8
0.8
0.32
156
ND2020L
200
"30
0.132
0.083
0.8
0.8
0.32
156
Unit
V
A
W
_C/W
_C
–55 to 150
Siliconix
S-52426—Rev. C, 14-Apr-97
1
ND2012L/2020L
Specifications
a
Limits
ND2012L
ND2020L
Parameter
Static
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
V
GS
= –8 V, I
D
= 10
mA
Drain-Source
Drain Source Breakdown Voltage
Gate-Source Cutoff Voltage
Gate-Body Leakage
V
(BR)DSV
V
GS(off)
I
GSS
V
GS
= –5 V, I
D
= 10
mA
V
DS
= 5 V, I
D
= 10
mA
V
DS
= 0 V, V
GS
=
"20
V
T
J
=
125_C
V
DS
= 160 V, V
GS
= –8 V
Drain Cutoff Current
I
D(off)
T
J
=
125_C
V
DS
= 160 V, V
GS
= –5 V
T
J
=
125_C
Drain-Saturation Current
c
I
DSS
V
DS
= 10 V, V
GS
= 0 V
V
GS
= 2 V, I
D
= 20 mA
Drain-Source On-Resistance
c
r
DS(on)
V
GS
= 0 V, I
D
= 20 mA
T
J
=
125_C
Forward Transconductance
c
Common Source Output Conductance
c
g
fs
g
os
V
DS
= 7 5 V I
D
= 20 mA
7.5 V,
220
220
200
200
–1.5
–4
"10
"50
1
200
1
200
mA
–0.5
–2.5
"10
"50
nA
V
300
7
8
12.6
55
75
30
30
mA
12
30
20
50
W
mS
mS
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= –5 V, f = 1 MHz
35
10
2
100
20
5
100
20
5
pF
Switching
d
Turn-On Time
t
d(on)
t
r
Turn-Off Time
t
d(off)
t
f
Notes
a. T
A
= 25_C unless otherwise noted.
b. For DESIGN AID ONLY, not subject to production testing.
c. Pulse test: PW
v300
ms
duty cycle
v2%.
d. Switching time is essentially independent of operating temperature.
V
DD
=
25
V R
L
= 1250
W
V,
I
D
^
20
mA, V
GEN
= -5 V
R
G
= 25
W
20
20
10
10
VDDQ20
ns
2
Siliconix
S-52426—Rev. C, 14-Apr-97
ND2012L/2020L
Typical Characteristics (25_C Unless Otherwise Noted)
100
Output Characteristics (ND2012)
0V
–0.5 V
–1 V
100
Output Characteristics (ND2020)
V
GS
= 2 V
80
I
D
– Drain Current (mA)
0.2 V
0V
–0.2 V
–0.4 V
80
I
D
– Drain Current (A)
V
GS
= 5 V
60
–1.5 V
60
–0.6 V
40
–1.4 V
40
–0.8 V
–1 V
–1.2 V
20
–2 V
–2.5 V
20
0
0
0.4
0.8
1.2
1.6
2
V
DS
– Drain-to-Source Voltage (V)
500
0
0
0.4
0.8
1.2
1.6
2
V
DS
– Drain-to-Source Voltage (V)
Transfer Characteristics (ND2012)
V
DS
= 10 V
T
C
= –55_C
25_C
125_C
I
D
– Drain Current (mA)
200
Transfer Characteristics (ND2020)
V
DS
= 10 V
160
400
I
D
– Drain Current (mA)
300
120
200
80
T
C
= 125_C
25_C
–55_C
100
40
0
–4.5
–3.5
–2.5
–1.5
–0.5
0.5
0
–4.5
–3.5
–2.5
–1.5
–0.5
0.5
V
GS
– Gate-Source Voltage (V)
V
GS
– Gate-Source Voltage (V)
25
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
r
DS
@ I
D
= 20 mA, V
GS
= 0 V
I
DSS
@ V
DS
= 7.5 V, V
GS
= 0 V
1000
25
On-Resistance vs. DrainCurrent
V
GS
= 0 V
r
DS(on)
– On-Resistance (
W
)
r
DS(on)
15
I
DSS
10
400
600
r
DS(on)
– On-Resistance (
W
)
20
800
20
I
DSS
– Drain Current (mA)
15
ND2020
10
ND2012
5
200
5
0
0
–1
–2
–3
–4
–5
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
0
10
100
I
D
– Drain Current (mA)
1K
Siliconix
S-52426—Rev. C, 14-Apr-97
3
ND2012L/2020L
Typical Characteristics (25_C Unless Otherwise Noted) (Cont’d)
Normalized On-Resistance
vs. Junction Temperature
2.25
g
fs
– Forward Transconductance (mS)
r
DS(on)
– Drain-Source On-Resistance
(Normalized)
2.00
1.75
1.50
1.25
1.00
0.75
0.50
–50
–10
30
70
110
150
T
J
– Junction Temperature (_C)
V
GS
= 0 V
I
D
= 20 mA
Forward Transconductance and Output
Conductance vs. Drain Current
350
300
250
200
150
100
50
0
1
10
100
I
D
– Drain Current (A)
g
fs
g
os
V
DS
= 7.5 V
Pulse Test
80 ms, 1% Duty Cycle
700
600
500
400
300
200
100
0
1K
g
os
– Output Conductance (m S)
Capacitance
120
100
C – Capacitance (pF)
80
60
40
20
0
0
C
rss
1
10
20
30
40
50
1
C
oss
C
iss
V
GS
= –5 V
f = 1 MHz
t – Switching Time (ns)
100
Load Condition Effects on Switching
t
d(on)
V
DD
= 25 V
V
GS
= 0 to –5 V
R
G
= 25
W
t
f
10
t
d(off)
t
r
10
I
D
– Drain Current (A)
100
V
DS
– Drain-to-Source Voltage (V)
1
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
Notes:
P
DM
0.01
Single Pulse
2. Per Unit Base = R
thJA
= 156
_
C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
0.01
0.1
1
10
100
1K
10 K
t
1
– Square Wave Pulse Duration (sec)
4
Siliconix
S-52426—Rev. C, 14-Apr-97
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